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    SERIES CONNECTION OF MOSFETS Search Results

    SERIES CONNECTION OF MOSFETS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SERIES CONNECTION OF MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SFH551V

    Abstract: IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V
    Text: IGD508E/IGD515E Data Sheet & Application Manual Intelligent Gate Drivers for IGBTs and Power MOSFETs Description The intelligent gate drivers of the IGD type series are single-channel drive components designed for IGBTs and power MOSFETs. They were developed specifically for the


    Original     		PDF IGD508E/IGD515E IGD508EI/EN IGD515EI/EN SFH551V IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V

    series connection of mosfet

    Abstract: MOSFETs Application Hints
    Text: Serial Connection of Power MOSFETs As for MOS modules, there are two main reasons for the serial connection of power MOSFETs: • To reduce the ON-resistance for a given voltage range. Since the ON-resistance for highvoltage MOSFETs is largely determined by the epi area, this increases at a higher than


    Original     		PDF 000-V series connection of mosfet MOSFETs Application Hints

    calculation of IGBT snubber

    Abstract: DSEP ISOPLUS247 dt300
    Text: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as


    Original     		PDF

    ssr schematic circuit

    Abstract: HSSR-8400 HSSR8060 HSSR-8060 zener Diode But ac ssr TRANSZORB solid HSSR-8200 HSSR8400
    Text: H Low On-Resistance Solid State Relays Application Note 1046 Introduction The on-resistance is an important specification for a solid state relay that uses MOSFETs at its output. In general, a lower on-resistance rating will allow a higher contact current rating. The HSSR-8060


    Original     		PDF HSSR-8060 HSSR-8400 HSSR8060/8400. ssr schematic circuit HSSR8060 HSSR-8060 zener Diode But ac ssr TRANSZORB solid HSSR-8200 HSSR8400

    HSSR-8060

    Abstract: ssr schematic circuit HSSR8060 ac ssr TRANSZORB solid HSSR-8200 HSSR8400 HSSR-8400 zener Diode But 5091-3123E
    Text: Low On-Resistance Solid State Relays Application Note 1046 Introduction Summary of Characteristics The on-resistance is an important specification for a solid state relay that uses MOSFETs at its output. In general, a lower on-resistance rating will allow a higher contact


    Original     		PDF HSSR-8060 HSSR-8400 5091-3123E 5965-5978E ssr schematic circuit HSSR8060 ac ssr TRANSZORB solid HSSR-8200 HSSR8400 zener Diode But 5091-3123E

    IXAN0060

    Abstract: series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
    Text: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim IXAN0060 Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as


    Original     		PDF IXAN0060 IXAN0060 series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
    Text: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176

    tektronix 576 curve tracer

    Abstract: tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944
    Text: Index AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs


    Original     		PDF AN-957 tektronix 576 curve tracer tektronix type 576 curve tracer curve tracer AN957 specification of curve tracer 5V GATE TO SOURCE VOLTAGE MOSFET IRF630 short circuit tracer tektronix 475 INT-944

    tektronix 576 curve tracer

    Abstract: No abstract text available
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-957 Measuring Power MOSFET Characteristics TABLE OF CONTENTS Page 1. General Information . 2


    Original     		PDF AN-957 18-Nov-10 tektronix 576 curve tracer

    RAA23

    Abstract: D2417 RAA230409 5 pin LDO IC - LP top mark RAA230408 RAA230401
    Text: Preliminary Datasheet RAA23040x Series [Under Development] R18DS0004EJ0101 Rev.1.01 Oct 18, 2012 3-ch Step-Down Switching Regulator + 1-ch LDO Description The RAA23040x is a power supply IC that has 3-ch step-down Switching Regulator containing power MOSFETs and


    Original     		PDF RAA23040x R18DS0004EJ0101 RAA23 D2417 RAA230409 5 pin LDO IC - LP top mark RAA230408 RAA230401

    VFQFPN-36

    Abstract: UGATE L6722 L6722TR
    Text: L6722 3 Phase controller for DC/DC converters Features • 2A integrated gate drivers ■ 0.8V reference ■ 1% output voltage accuracy ■ Adjustable reference offset ■ Precise current sharing and OCP across LS MOSFETS ■ Constant over current protection


    Original     		PDF L6722 100kHz, L6722 VFQFPN36 VFQFPN36 VFQFPN-36 UGATE L6722TR

    Untitled

    Abstract: No abstract text available
    Text: L6722 3 Phase controller for DC/DC converters Features • 2A integrated gate drivers ■ 0.8V reference ■ 1% output voltage accuracy ■ Adjustable reference offset ■ Precise current sharing and OCP across LS MOSFETS ■ Constant over current protection


    Original     		PDF L6722 100kHz, VFQFPN36 VFQFPN36 L6722

    NR134S

    Abstract: NR134
    Text: Ultra light load high efficiency,VIN=17V,Current mode Step-down Io=3A Buck Regulator IC NR130S series Sep/10/2013 General Descriptions Package The NR130 series is buck regulator ICs integrates High-side power MOSFETs. With the current mode control, ultra low ESR capacitors such as ceramic


    Original     		PDF NR130S Sep/10/2013 NR130 NR134S NR134

    gma500

    Abstract: atmel 0751 BF518 emmc socket str w 6251 eMMC intel electronic passive components catalog embedded system projects free 2012 IRFS3107-7PPbF omap310
    Text: ISSUE 01/MARCH 2009 . ISSN NO. 1613-4036 LIVE Distributor No.1 Connectors for for LED LED Connectors Lighting Applications Applications Lighting SPOERLE Embedded Platform Concept International Rectifier New Power MOSFETs Tyco Electronics THR-Compatible Power PCB Relays


    Original     		PDF 01/MARCH gma500 atmel 0751 BF518 emmc socket str w 6251 eMMC intel electronic passive components catalog embedded system projects free 2012 IRFS3107-7PPbF omap310

    CS32

    Abstract: L6722 L6722TR VFQFPN-36
    Text: L6722 3 Phase controller for DC/DC converters Features • 2A integrated gate drivers ■ 0.8V reference ■ 1% output voltage accuracy ■ Adjustable reference offset ■ Precise current sharing and OCP across LS MOSFETS ■ Constant over current protection


    Original     		PDF L6722 100kHz, L6722 VFQFPN36 CS32 L6722TR VFQFPN-36

    RAA230214

    Abstract: RAA230215 dstb 1000 25VIREG RAA23
    Text: Preliminary Datasheet RAA23021x Series [Under Development] R18DS0003EJ0001 1-ch Step-Down Switching Regulator + 1-ch LDO Rev.0.01 Oct 18, 2012 Description The RAA23021x is a power supply IC that has 1-ch step-down Switching Regulator containing power MOSFETs and


    Original     		PDF RAA23021x R18DS0003EJ0001 RAA230214 RAA230215 dstb 1000 25VIREG RAA23

    full bridge pwm controller sg3526

    Abstract: SG3526 sample circuit sg3526 power supply full bridge sg3526 application notes MTP40N06M MTP10N10M application form chip sg3526 MTP50N05E soft start circuit 555 timer using in smps application form for chip sg3526
    Text: AND8093/D Current Sensing Power MOSFETs http://onsemi.com APPLICATION NOTE SENSEFETE PRODUCT Current sensing power MOSFETs provide a highly effective way of measuring load current in power conditioning circuits. Conceptually simple in nature, these devices split load current into power and sense


    Original     		PDF AND8093/D r14525 full bridge pwm controller sg3526 SG3526 sample circuit sg3526 power supply full bridge sg3526 application notes MTP40N06M MTP10N10M application form chip sg3526 MTP50N05E soft start circuit 555 timer using in smps application form for chip sg3526

    12v to 1000v inverters circuit diagrams

    Abstract: 1n4007 MTBF IHD680 ihd680ai diode SO1 Diode 1N4007 transistor japanese transistor manual IHD280 4N7 CAPACITOR 1000V japanese transistor reference manual
    Text: IHD 215/280/680 Data Sheet & Application Manual Intelligent Half-Bridge Drivers for IGBTs and Power MOSFETs Description The intelligent half-bridge drivers of the IHD type series have been developed specifically for the reliable driving and secure protection


    Original     		PDF ISO9001 12v to 1000v inverters circuit diagrams 1n4007 MTBF IHD680 ihd680ai diode SO1 Diode 1N4007 transistor japanese transistor manual IHD280 4N7 CAPACITOR 1000V japanese transistor reference manual

    B3P diode

    Abstract: diode B4P b1p 100 35v
    Text: 19-2278; Rev 0; 4/02 Advanced Li+ Battery-Pack Protectors In case of a fault condition, on-board drivers control external P-channel MOSFETs, which disconnect the cells from the pack external terminals. The external protection MOSFETs are connected in a common-source configuration that does not require external pullup resistors. The


    Original     		PDF MAX1894/MAX1924 MAX1894/MAX1924 B3P diode diode B4P b1p 100 35v

    Untitled

    Abstract: No abstract text available
    Text: 19-2278; Rev 0; 4/02 Advanced Li+ Battery-Pack Protectors In case of a fault condition, on-board drivers control external P-channel MOSFETs, which disconnect the cells from the pack external terminals. The external protection MOSFETs are connected in a common-source configuration that does not require external pullup resistors. The


    Original     		PDF MAX1894/MAX1924 MAX1894/MAX1924

    MAX1924

    Abstract: MAX1924X MAX1924XEEE MAX1894 MAX1894XEEE MAX1924VEEE specifications dso ic212 12v battery protection from deep discharge
    Text: 19-2278; Rev 0; 4/02 Advanced Li+ Battery-Pack Protectors In case of a fault condition, on-board drivers control external P-channel MOSFETs, which disconnect the cells from the pack external terminals. The external protection MOSFETs are connected in a common-source configuration that does not require external pullup resistors. The


    Original     		PDF MAX1894/MAX1924 MAX1894/MAX1924 MAX1924 MAX1924X MAX1924XEEE MAX1894 MAX1894XEEE MAX1924VEEE specifications dso ic212 12v battery protection from deep discharge

    ihd680ai

    Abstract: IGD608 IHD680 IGD615 IGD6
    Text: IGD608/IGD615 Data Sheet Intelligent Gate Drivers for IGBTs and Power MOSFETs Description The intelligent gate drivers of the IGD type series are single-channel drive components designed for IGBTs and power MOSFETs. They were developed specifically for the


    Original     		PDF IGD608/IGD615 IGD608AI/AN IGD615AI/AN IGD608 IGD615 IGD608xx IGD615xx ihd680ai IHD680 IGD615 IGD6

    Untitled

    Abstract: No abstract text available
    Text: W hpl H E W L E T T m ifíM P A C K A R D Low On-Resistance Solid State Relays Application Note 1046 Introduction The on-resistance is an important specification for a solid state relay that uses MOSFETs at its output. In general, a lower on-resistance rating will allow a higher contact


    OCR Scan     		PDF HSSR-8060 HSSR-8400