Contextual Info: Data Sheet Rev.1.1 07.01.2010 4GB DDR2 – SDRAM registered DIMM Features: 240 Pin RDIMM 1 SEP04G72G1AH2MT-30 1 4GB PC2-5300 in FBGA Technique 1 1 RoHS compliant Options: 1 Frequency / Latency DDR2 800MHZ CL6 800MHZ CL5 667 MHz CL5 1 Module densities 1024MB with 18 dies and 2 ranks

Q62702-G0043

Abstract: VPS05178
Contextual Info: BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz 4 • 12 dBm typical P-1dB at 1.0 GHz • 3 dB-bandwidth: DC to 1.2 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND

MMIC SOT 89 marking CODE

Abstract: Q62702-G0042 VPS05178 BMS 13-58 Type 1
Contextual Info: BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz 4 • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST EH 00 LTR B 1. D REV-EC 0B10-0084-04 DWN APVD LH cc SEP04 D ONE CABLE PACKAGED IN A CLEAR POLY BAG. A DIMENSIONS ARE MAXIMUM

Contextual Info: R E V IS IO N S SYM 2 .5 1 0 _ 0 l | .6 2 0 [6 3 .7 5 ]- £X H /-it, .a /-it, D E [1 5 .7 5 ] [1 3 .3 4 ] 0.098 [2 .5 0 ] -.1 0 0 TYP. 060 .220 [5 .5 9 ] _ TYP. .0 5 0 [ 1 . 2 7 ] TYP. - [1 .5 1 ].1 7 0 100 .181 .1 0 0 [1 .9 2 ] 0 .1 0 6 ± . 0 0 2 [0 2 .6 9 ± O .O 5 ]

Contextual Info: 2 THI S DRAWI NG I S U NP U B L I S HE D. C OP YRI GHT 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATI ON. ALL 20 LOC AD R 1GHTS R ES ERVE D. HOUSI NG CONTACT MATERIAL: MATERIAL: REV 1S I O N S DIST 00 P LTR DESCRIPTION

Q62702-A1190

Contextual Info: BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface 2 mounting SMD 1 VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

a1188

Abstract: Q62702-A1188
Contextual Info: BAT 60A Silicon Schottky Diode • Rectifier Schottky diode with extreme low VF drop for mobile communication 2 • For power supply • For clamping and proptection in low voltage application 1 • For detection and step-up-conversion VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-G0041

Abstract: VPS05178 SOT-143 982
Contextual Info: BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 9 dB typical gain at 1.0 GHz 4 • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.4 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND

44s sot23

Abstract: 43s sot23 MARKING 720 SOT23 top marking c2 sot23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40-5
Contextual Info: BAS40. 3 Silicon Schottky Diodes
General-purpose diode for high-speed switching
Circuit protection 2
Voltage clamping
High-level detecting and mixing BAS40 1 1 BAS40-04 BAS40-06 3 3 3 3 EHA07002 BAS40-05 1 2 1 1 2 2 EHA07006 EHA07004 EHA07005 VPS05161

Contextual Info: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. A B 71.2 2.805 REF 1 DATE NEW PROPOSAL DWG UPDATED LATCHING FEATURE APP'D SEP10/12 SM OCT02/12 SM 1 2.74 .108 TYP 8.4 .331 7.35 .289 TYP 2 3.6 .142 2 66.2 2.604 REF 10.7 .421 3 3 7.7 .303 7.7 .303 14.2

NS9360B-0-C177

Abstract: NET 50-QIT-3 NS9360B-0-I155 DC-ME-01T-S NS9750B-0-C200 NET 40-QIT-4 db09f UNC20 NS7520B-1-I46 NS9750B
Contextual Info: Digi International RoHS Compliant Product Information Item Description Plan Compliant Note Sample - Production Date Multiport Serial Cards 76000001 4 Port DB9F DTE Cable RoHS Jun-06 76000002 4 Port DB9F RS422 Cable RoHS Feb-06 76000003 4 Port DB9M DTE Cable

GP-009 diode

Contextual Info: BAR88-02V Silicon PIN Diode Preliminary data 2
Optimized for low current antenna switches in hand held applications
Very low forward resistance typ.1.2 @ IF = 2mA 1
Low capacitance at zero volts reverse bias VES05991 at frequencies above 1GHz
Very low signal distortion

Q62702-A1189

Contextual Info: BAT 60B Silicon Schottky Diode • Rectifier Schottky diode for mobile communication • Low voltage high inductane 2 • For power supply • For clamping and proptection in low voltage application 1 • For detection and step-up-conversion VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution!

heraeus pd955

Abstract: pd955 heraeus pd945 SAEJ1752 heraeus 2N2222 SMD equivalent 2n2222 smd DiSEqC 1.0 / 1.1 PD945 AN1709
Contextual Info: ST7LNB0 DiSEqC 2.1 Slave Microcontroller for LNBs and Switchers The ST7LNB0 is an 8-bit microcontroller dedicated to DiSEqC™ slave operation in LNBs and switchers, it is compliant with the DiSEqC™ 2.1 level, also it supports backwards compatible 13/

BFR 182 transistor

Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
Contextual Info: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BAS70

Abstract: BAS70-04 a2 sot23 75S SOT23 BAS70-05 74S SOT23 marking 72C SOT23 BAS70-06 BAS20 SOT23 top marking c2 sot23
Contextual Info: BAS70. 3 Silicon Schottky Diodes
General-purpose diode for high-speed switching
Circuit protection 2
Voltage clamping
High-level detecting and mixing BAS70 1 1 BAS70-04 BAS70-06 3 3 3 3 EHA07002 BAS70-05 1 2 1 1 2 2 EHA07006 EHA07004 EHA07005 VPS05161

A1266

Abstract: transistor a1266 a1266 transistor a1265 Q62702-A1266 transistor a1264 Q62702-A1264 Q62702-A1265 a1264 VSO05561
Contextual Info: BAR 64 . W Silicon PIN Diode 3 • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime 2 • For frequencies up to 3 GHz 1 BAR 64-04W BAR 64-05W VSO05561

Contextual Info: ST7LNB0 DiSEqC 2.1 Slave Microcontroller for LNBs and Switchers The ST7LNB0 is an 8-bit microcontroller dedicated to DiSEqC™ slave operation in LNBs and switchers, it is compliant with the DiSEqC™ 2.1 level, also it supports backwards compatible 13/

a1273 transistor

Abstract: A1273 br a1273 transistor A1274 Q62702-A1273 a1273* transistor datasheet A1271 transistor a1271 a1273* transistor transistor a1273
Contextual Info: BAT 17W Silicon Schottky Diodes 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 1 BAT 17W BAT 17-04W BAT 17-05W VSO05561 BAT 17-06W Type Marking Ordering Code Pin Configuration Package BAT 17W 53s Q62702-A1271

RFID 125khz active

Abstract: MLX10111 mlx90268 Sensor Interfaces digital blood pressure circuit diagram using microcontroller 125KHz LF coil antenna for Automotive SSOP28 209 mils HF RFID circuit micro controller interface between rfid rfid long range lf
Contextual Info: MLX10111 Intelligent Transponder with Sensor Interfaces Features and Benefits A 16 bit microcontroller to give all flexibility for integration in the application. Flexible power management functions under software control. All oscillators for clocking and time management are fully on-chip and calibrated.

Contextual Info: ST7LNB0V2Y0 DiSEqC 2.1 slave microcontroller for LNBs and switchers Features • ■ Clock, reset and supply management – Reduced power consumption. – Safe power on/off management by low voltage detector LVD . – Internal 8 MHz oscillator SO16 narrow

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR DESCRIPTION H O U S IN G M A T E R IA L: COLOR: NATURAL. 2\ CONTACT M ATERIAL: CONTACT F IN IS H :

IGP10N60T

Abstract: IKP10N60T
Contextual Info: TrenchStop Series IGP10N60T q Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Variable Speed Drive for washing machines and air