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    SEMIKRON SEMIX 604GB12E4S

    Igbt, Module, 1.2Kv, 916A, Semix 4S; Continuous Collector Current:916A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX 604GB12E4S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX 604GB12E4S Bulk 4
    • 1 $302.05
    • 10 $293.6
    • 100 $276.7
    • 1000 $276.7
    • 10000 $276.7
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    SEMIKRON SEMIX604GB12E4S 27890150

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX604GB12E4S 27890150 1
    • 1 $921.48
    • 10 $679.16
    • 100 $631.34
    • 1000 $631.34
    • 10000 $631.34
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    SEMIKRON SEMIX604GB12E4S

    POWER IGBT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD SEMIX604GB12E4S 1
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    SEMIX604GB12E4S 1
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    SEMIX604GB12E4S Datasheets Context Search

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    SEMIX604GB12E4S

    Abstract: No abstract text available
    Text: SEMiX604GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX604GB12E4s E63532 SEMIX604GB12E4S

    SEMIX604GB12E4S

    Abstract: No abstract text available
    Text: SEMiX604GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX604GB12E4s E63532 SEMIX604GB12E4S

    Untitled

    Abstract: No abstract text available
    Text: SEMiX604GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX604GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX604GB12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX604GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX604GB12E4s E63532

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1