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    SEMIX302GAR Search Results

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    SEMIX302GAR Price and Stock

    SEMIKRON SEMIX302GAR12E4S

    Igbt Module, Single, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GAR12E4S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX302GAR12E4S Bulk 6
    • 1 -
    • 10 $111.68
    • 100 $102.11
    • 1000 $102.11
    • 10000 $102.11
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    Richardson RFPD SEMIX302GAR12E4S 1
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    SEMIKRON SEMIX302GAR12E4S 27890222

    Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX302GAR12E4S 27890222 1
    • 1 $344.18
    • 10 $272.12
    • 100 $245.23
    • 1000 $245.23
    • 10000 $245.23
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    SEMIX302GAR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX302GAR066HD Semikron Trench IGBT Modules Original PDF
    SEMIX302GAR126HD Semikron Trench IGBT Modules Original PDF
    SEMIX302GAR12T4S Semikron Trench IGBT Modules Original PDF

    SEMIX302GAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX302GAR12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C


    Original     		PDF SEMiX302GAR12E4s E63532

    igbt welding

    Abstract: SEMIX302GAR
    Text: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX302GAR12T4s E63532 igbt welding SEMIX302GAR

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX302GAR12T4s E63532 TypEMiX302GAR12T4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX302GAR12E4s SEMiX302GAR12E4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX302GAR12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356


    Original     		PDF SEMiX302GAR12T4s

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX302GAR12E4s E63532 dEMiX302GAR12E4s

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1