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    SEMIX151GB12E4S Price and Stock

    SEMIKRON SEMIX151GB12E4S

    Igbt Module, Dual, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GB12E4S
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    Newark SEMIX151GB12E4S Bulk 8
    • 1 -
    • 10 $78.44
    • 100 $78.44
    • 1000 $78.44
    • 10000 $78.44
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    ComSIT USA SEMIX151GB12E4S 40
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    SEMIKRON SEMIX151GB12E4S 27890100

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX151GB12E4S 27890100 1
    • 1 $249.37
    • 10 $183.64
    • 100 $170.08
    • 1000 $170.08
    • 10000 $170.08
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    SEMIX151GB12E4S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		SEMiX151GB12E4s E63532 PDF

    SEMiX151GB12E4s

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX151GB12E4s E63532 SEMiX151GB12E4s PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		SEMiX151GB12E4s E63532 AppliMiX151GB12E4s PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		SEMiX151GB12E4s SEMiX151GB12E4s E63532 PDF

    SEMIX151GB12E4S

    Abstract: No abstract text available
    Text: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C


    Original     		SEMiX151GB12E4s E63532 SEMIX151GB12E4S PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF