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SEMISOUTH Abstract: SDP60S120D SemiSouth Laboratories sdp60s Text: Silicon Carbide SDP60S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current	Original	PDF	SDP60S120D O-247 SDP60S120D SEMISOUTH SemiSouth Laboratories sdp60s
SJEP120R100A Abstract: JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories Text: Silicon Carbide PRELIMINARY SJEP120R100A Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C	Original	PDF	SJEP120R100A O-247 SJEP120R100A JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories
SJEP170R550 Abstract: SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP Text: Silicon Carbide PRELIMINARY SJEP170R550 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior	Original	PDF	SJEP170R550 O-247 SJEP170R550 SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP
SJEP120R063 Abstract: SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0 Text: Silicon Carbide PRELIMINARY SJEP120R063 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior	Original	PDF	SJEP120R063 O-247 SJEP120R063 SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0
SEMISOUTH Abstract: SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide Text: Silicon Carbide PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage	Original	PDF	SDP30S120 SEMISOUTH SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide
SDP20S120D Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature	Original	PDF	SDP20S120D O-247 SDP20S120D C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
SEMISOUTH Abstract: SDA10S120 C-183 silicon carbide Text: Silicon Carbide PRELIMINARY SDA10S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current	Original	PDF	SDA10S120 O-220 SEMISOUTH SDA10S120 C-183 silicon carbide
SEMISOUTH Abstract: SDA05S120 sine wave ups SCHEMATIC silicon carbide C15600 solar inverter SemiSouth Laboratories Text: Silicon Carbide PRELIMINARY SDA05S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current	Original	PDF	SDA05S120 O-220 SEMISOUTH SDA05S120 sine wave ups SCHEMATIC silicon carbide C15600 solar inverter SemiSouth Laboratories
SEMISOUTH Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device Text: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current	Original	PDF	SDP10S120D O-247 SEMISOUTH SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
JFET semisouth Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A	Original	PDF	SGDR600P1 5V/-15V SGDR600P1 SJEP120R050 SJEP120R063 SJEP120R050 JFET semisouth SEMISOUTH SJEP120 AN-SS1 ixdd509 SiC JFET JFET
Untitled Abstract: No abstract text available Text: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm	Original	PDF	30-kW 30-kW, SJEP120R100,
SJEP120R100 Abstract: SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C	Original	PDF	SJEP120R100 O-247 SJEP120R100 SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth
SJDP120R085 Abstract: SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r Text: Silicon Carbide PRELIMINARY SJDP120R085 Product Summary Normally-On Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C	Original	PDF	SJDP120R085 O-247 SJDP120R085 SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r
SJEP120R100 Abstract: SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET Text: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C	Original	PDF	SJEP120R100 O-247 SJEP120R100 SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET

Untitled Abstract: No abstract text available Text: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 michael.frisch@vincotech.com FIRST STANDARD POWER MODULES WITH NORMALLY OFF SiC JFETs FOR HIGHPERFORMANCE SOLAR INVERTERS	Original	PDF
SJEP120R125 Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120 Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2	Original	PDF
Integrated cooling solutions hot up Abstract: No abstract text available Text: J U L Y 2 0 1 2 I S S U E N ° 6 I N D U S T R Y R E V I E W Integrated cooling solutions hot up Stacks of potential: Danfoss is using its ShowerPower cooling solution to build three dimensional power blocks which will offer especially high power density.	Original	PDF	RD100 Integrated cooling solutions hot up