Varistoren lebensdauer
Abstract: semikron skpt 25 semikron skpt SKPT 25 SKPT 11 SKPT25A3 SKPT Varistoren bimetall Thyristor Tabelle
Text: 14.2 SEMIKRON Impulsübertrager Typenschlüssel SK PT 27 a 10 SEMIKRON-Bauelement Pulsübertrager Gehäusegröße Übersetzungsverhältnis a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Typennummer ungefährer ∫ vdt-Wert [µVs]/100 Technische Erläuterungen
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thyristor st 103
Abstract: semikron skpt SKPT 11 thyristor TRIGGER PULSE TRANSFORMER Thyristor pulse transformer semikron skpt 25 SKPT Pulse Transformers skpt 16 model of application circuit of thyristor firing bc 331
Text: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction
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3SK70
Abstract: diode 1600 rectifier pcb diode module
Text: SEMIKRON, leading manufacturer of diode thyristor power semiconductor module. Seite 1 von 3 SK 70 D VRSM VRRM, VDRM ID = 70 A full conduction V V (Ts = 80 °C) 800 1200 1600 SEMITOP 2 Conditions Ts = 80 °C IFSM Tvj = 25 °C; 10 ms Tvj = 150 °C; 10 ms
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Untitled
Abstract: No abstract text available
Text: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module SK 35 GB 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
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Untitled
Abstract: No abstract text available
Text: SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 3 IGBT module ICRM = 3 x ICnom tpsc V 35 A 29 A 25 A 75 A -20 . 20 V 10 µs -40 . 175 °C
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12T4
Abstract: No abstract text available
Text: SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 3 IGBT module SK 25 GH 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
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Untitled
Abstract: No abstract text available
Text: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module ICRM = 3 x ICnom tpsc V 44 A 35 A 35 A 105 A -20 . 20 V 10 µs -40 . 175 °C
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Semikron sK1 04
Abstract: Semikron sk 1/08 semikron sk1 Semikron sk 1 Semikron sk 3- 01 Semikron SK 3 G semikron SKS Semikron sK1 12 SK1G VIRT
Text: SEMIKRON SEMIKRON INC Ifrm s V rsm V rrm maximum values for continuous operation 3A | 6,7 A (sin. 180, Tref = 105 °C, L = 10 mm) 1,9 A 4,3 A Ifa v V 100 200 400 600 800 1000 1200 SK 1 G 01 Ifav SK1G SK3G " T 'C H - lS S K 3 G 01 S K 1 G 02 SK 3 G 02 SK 1 G 04
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Semikron sk 20
Abstract: No abstract text available
Text: 15E D | SEMIKRON INC fll3tb?L 0001003 a | -T-z.3. o s SEMIKRON Section 10: High Voltage Rectifiers Ifav Ifav Ifn VF N Rthja Tamb Ton Tamb If = 1A =45°C =75°C = 45°C A A A V °c /w VflRM V BR VvBMS Types V V V 6000 7500 2500 H SK E 2500/1100-0,3 8000 10000 3500 H SK E 3500/1550-0,3
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B748
Abstract: No abstract text available
Text: SEMIKRON V SKiiPPACK SK integrated intelligent Power PACK halfbridge SKiiP 192 GH 170 + Driver 272 CTV 713 A °C Case S2 SKiiP 192 GH 170 - 272 CTV Absolute Maximum Ratings Symbol Values |Conditions11 Units IGBT & Inverse Diode Vces V cc , 91 lc T j 3’
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B7-48
B748
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Semikron sk 100 dal
Abstract: Semikron sk 50 dal
Text: S1E D Ô13bb71 □□0303ti 375 SEMIKRON INC s e Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V lc ICM > 1200 V SEMITRANS 3 NPN Power Darlington Modules 150 A, 1200 V 1200 V V SK 150 DB 120 D SK 150 DAL 120 D V A tp = 1 ms 300 A 150 A II
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13bb71
0303ti
Semikron sk 100 dal
Semikron sk 50 dal
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Semikron SK 3 G
Abstract: No abstract text available
Text: SEMIKRON Fast Recovery Rectifier Diodes Ifrms m axim um values for continuous operation V rsm V rrm Ifav (sin. 10 A 10 A 10 A 1 8 0 ; T re f = 1 0 5 ° C , L= 10 mm; f < 1 kHz) SK3GF SK3GH SK3GL 3 ,8 A 3 ,4 A 3 ,8 A 100 SK3G F01 S K3G H 01 - 200 SK 3 GF 02
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SK3F10
Abstract: Semikron sK1 04 semikron SK3 k3f tam sk3f08 30 semikron SK3 04 SK3F08 semikron sk1 Semikron sk 03 SK1F04
Text: SEMIKRCN 15E D I INC fll3 b t7 1 QOQlflcll B | SEMIKRON V rsm V rrm trr If r m 5A If a v V T - o 3 - / r Fast Recovery Rectifier Diodes maximum values for continuous operation s ns | (sin. 180; 15 A Tam b SK1F SK3F = 55 °C) 1A 3A 100 150 SK1 F 01 SK 3F01
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l3bt71
SK3F01
SK1F02
SK3F02
SK1F04
SK3F04
SK3F08
SK1F10
SK3F10
00Qia2b
SK3F10
Semikron sK1 04
semikron SK3
k3f tam
sk3f08 30
semikron SK3 04
SK3F08
semikron sk1
Semikron sk 03
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Semikron sK1 04
Abstract: gf-01 94v-0 Semikron sk 1 Semikron sk 1 gf 01 Semikron sK1 04 95 gl04 Semikron sk 3- 01 GH-08 semikron sk1 Semikron sK1 12
Text: S1E J> 013bb71 GGOBTD? 455 « S E K G SEMIKRON SEMIKRON INC Ifr m s V rsm If a v V Fast Recovery Rectifier Diodes — - maximum values for continuous operation 10 A V rrm 10 A 10 A -T - 0 > - l ^ (sin. 180; Tref = 120 °C, L = 10 mm; f < 1 kHz)
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13bb71
Semikron sK1 04
gf-01 94v-0
Semikron sk 1
Semikron sk 1 gf 01
Semikron sK1 04 95
gl04
Semikron sk 3- 01
GH-08
semikron sk1
Semikron sK1 12
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Semikron SK 3 G
Abstract: Semikron sk 1/08
Text: S1E D fllBbL.71 0003032 S1Û se MIKRD n SEMIKRON INC Ifrm s maximum values for continuous operation V rsm V rrm 3A | 6,7 A 1,9 A V 200 400 600 800 1000 1200 Symbol Conditions Ifav 4,3 A SK 1 G 01 S K 1 G 02 SK 1 G 04 SK 1 G 06 SK 1 G 08 SK1 G 10 SK 1 G 12 *
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13bb71
Semikron SK 3 G
Semikron sk 1/08
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hske 6000
Abstract: HSKE skv 1/2b 6000/5400 SKV1 HSK E 14000/6300 7500 3300 HSK-E 2500 B6000 HSK-E 5000 SKV1/HSK E 14000/6300
Text: S 1E D • fll3 bb?l □ D G 3 ciSci Ô53 « S E K G seMIKRDn SEMIKRON INC Section 10: High Voltage Rectifiers V rrm V BR VvHMS Types V V 6000 7500 8000 10000 12000 15000 " P 2_3> - 0 5 N Rthja Vf If a v If a v If n Tort Tamb |f — 1A Tamb =45°C =75°C =45°C
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f-40-
B10-4
hske 6000
HSKE
skv 1/2b 6000/5400
SKV1
HSK E 14000/6300
7500 3300
HSK-E 2500
B6000
HSK-E 5000
SKV1/HSK E 14000/6300
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Semikron sk 51
Abstract: SK09 SK09H10 SK0-9H10 SK 300 CIRCUIT Semikron sk 100
Text: Ö13bb71 GDOBTQa ÖDT SIE D se MIKRün SENIKRON INC Fast Recovery Rectifier Diodes Ifrm s m axim um values for continuous operation V rsm 3A V rrm I 3A 3A ''P 0 2 > - C S (sin. 180; Tref= 120 °C, L = 10 mm; f < 1 kHz) If a v V I 1,1 A 1,1 A SK 09 F SK 09 H
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13bb71
SK09H10*
Semikron sk 51
SK09
SK09H10
SK0-9H10
SK 300 CIRCUIT
Semikron sk 100
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Semikron sk 30 dal
Abstract: No abstract text available
Text: SIE D • Ö13bb71 0 0 0 3 7 0 0 ä^S « S E K G semikron^inF "— s e m ik r d n Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = —2 V ICM = II II o o m o D. C. lc If > V ebo CM I II LU CÛ VCBO > VCEV Values -lc 1200 V 1200 V 1200 v 7 V 30 A tp = 1 ms
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13bb71
B7-64
13bb71
fll3bb71
B7-66
Semikron sk 30 dal
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Untitled
Abstract: No abstract text available
Text: 51E 3> • Öl3bb71 0GQ37M4 SbO « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus Values Units V 1200 V II o I V VcBO CM 1200 > 1200 II LU CD lc = 1 A, V be = - 2 V VcEV m Conditions > Symbol V ebo lc = 0 7 V lc D. C. 100 A tp = 1 ms 200 A D. C. 100
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l3bb71
0GQ37M4
613bb71
T-33-35
SK100DA120D
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thyristor st 103
Abstract: MCR-SL-S-1/thyristor st 103
Text: J.5E D SEMIKRON INC I fll3W,?l GÜOm'iB O I -p a s ^ V drm Itrms maximum values for continuous operation tq 110 A (Tvj V rrm 125 C) V SKFT 40/08 DS 15 20 25 1000 - 40/08 DU 40/10 DT 40/10 DU 40/12 DT 40/12 DU - 20 25 20 25 25 1200 1400 130 A 130 A 110 A
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SKFT60
thyristor st 103
MCR-SL-S-1/thyristor st 103
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Untitled
Abstract: No abstract text available
Text: SIE D • Ö13bb71 DD037S2 b37 « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus lc = 1 A ,V be = - 2 V V V V V A 300 150 8 1000 - 4 0 . . . + 150 - 4 0 . . . + 125 2500- A A A W °C °C V o II O D. C. tp = 1 ms Ib Tease —25 °C Ptot Tvj Tstg Visol
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13bb71
DD037S2
T-33-35
l3bb71
QQD37SS
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SKT10/04C
Abstract: No abstract text available
Text: _J1E I> • fll3bti71 G0034bfci MAT S E rîIK R 0 iT i n c ' V rsm V rrm V drm *L Itrms (maximum values for continuous operation) 30 A Vdt/or | 40 A | 50 A ItAV (sin. 180; Tease = . ,°C) V V V/|1S 500 700 400 600 900 800 200 200 500 200 500 500 200 500
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fll3bti71
G0034bfci
SKT16/04C
SKT10/08D
SKT10/10D
G347G
B3-11
0DQ3471
O-208
SKT10/04C
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Untitled
Abstract: No abstract text available
Text: SIE D Ö13bb71 □□D3ÔPÔ ST1 » S E K G • SEMIKRDN SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, - 2 600 V V II V o V 600 V ebo o 600 o II I m Vbe = Units > II CM UJ CO > VcEV Values 7 V lc D. C. 150 A tp = 1 ms 300 A If = - l c 150
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13bb71
13bb71
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SKT240
Abstract: semikron skt 290 SKT290F12DU f 102 tea 1601 tea 1601 t F08DT SKT240F04DS SKT240F08DT SKT240F10DS
Text: S1E D fil3bfc.71 QGG3SEÖ 55b « S E K G SEMIKRDN SEMIKRON INC Itrm s m axim um values for continuous operation V drm tq V rrm (Tvj = 125 °C) V US 240 A (88 °C) 400 15 20 SK T240F04D S SKT240 F 0 4 D T SK T 290 F 04 DS S K T290F04D T 800 15 20 SK T240 F 0 8 D S
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SKT240F04DS
SKT290F04DS
SKT240
F04DT
SKT290F04DT
F08DS
SKT290F08DS
SKT240F08DT
SKT290
semikron skt 290
SKT290F12DU
f 102
tea 1601
tea 1601 t
F08DT
SKT240F10DS
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