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C322 diode Abstract: 12n05 p12n05 SEFM12H05 Text: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS	OCR Scan	PDF	SEFM12NQ5 SEFM12N06 SEFP12N05 SEFP12N06 0V/60V 12N05 12N06 300jus, C322 diode p12n05 SEFM12H05

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C322 diode

Abstract: 12n05 p12n05 SEFM12H05
Text: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS

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SEFM12NQ5 SEFM12N06 SEFP12N05 SEFP12N06 0V/60V 12N05 12N06 300jus, C322 diode p12n05 SEFM12H05