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    st C212 diode

    Abstract: C2099 SEF323 SEF321
    Text: S G S-THOMSON 0 7 E D g 7^2^537 O Q l ? ^ 73C 1 7 4 8 6 D T - 3 9-f/ ë \\ LA f-X\ p . N-CHANNELPOWER MOSTRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.


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    PDF SEF323i 00V/350V 00V/350V 300ns, SGSP564 C-211 SEF32Q SEF322 SEF323 E--09 st C212 diode C2099 SEF323 SEF321