SEC SSP4N80A Search Results

SEC SSP4N80A Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
ADXRS652BBGZ-RL		Analog Devices	±250°/sec Yaw Rate Industrial
ADIS16137BMLZ		Analog Devices	±1000°/sec Precision Angular R
ADXRS652BBGZ		Analog Devices	±250°/sec Yaw Rate Industrial
ADXRS622BBGZ		Analog Devices	±250°/sec Yaw Rate Gyroscope
EVAL-ADXRS649Z		Analog Devices	±20,000°/sec Yaw Rate Gyroscop

SEC SSP4N80A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SSP4N80AS Abstract: No abstract text available Text: SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V	Original	PDF	SSP4N80AS O-220 SSP4N80AS
SSP4N80AS Abstract: No abstract text available Text: SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V	Original	PDF	SSP4N80AS O-220 SSP4N80AS
SSP4N80A Abstract: No abstract text available Text: SSP4N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 4.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V	Original	PDF	SSP4N80A O-220 SSP4N80A
Untitled Abstract: No abstract text available Text: SSP4N80AS Advanced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology dss = ^D S o n = ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 ^lA (Max.) @ VDS = 800V	OCR Scan	PDF	SSP4N80AS
Untitled Abstract: No abstract text available Text: SSP4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|^A (Max.) @ V DS = 800V ■	OCR Scan	PDF	SSP4N80AS
Untitled Abstract: No abstract text available Text: SSP4N80A A d v a n c e d Power MOSFET FEATURES B V DSS - 800 V 4.0 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|^A (Max.) @ V DS = 800V	OCR Scan	PDF	SSP4N80A
Untitled Abstract: No abstract text available Text: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V	OCR Scan	PDF	SSP4N80A 7Tb4145 004G3Ã 003b32fl O-220 00M1N 7Tb4142 DD3b33D
SSP4N80AS Abstract: No abstract text available Text: Advanced SSP4N80AS Power MOSFET FEATURES • BV 800 V ^D S o n = 3.0 Q. lD = 4.5 A A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea	OCR Scan	PDF	SSP4N80AS SSP4N80AS
SSP4N80A Abstract: sec ssp4n80a Text: Advanced SSP4N80A Power MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T ech n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 4 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea	OCR Scan	PDF	SSP4N80A T0-220 SSP4N80A sec ssp4n80a