Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SEC IRF630A Search Results

    SEC IRF630A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADXRS652BBGZ-RL Analog Devices ±250°/sec Yaw Rate Industrial Visit Analog Devices Buy
    ADIS16137BMLZ Analog Devices ±1000°/sec Precision Angular R Visit Analog Devices Buy
    ADXRS652BBGZ Analog Devices ±250°/sec Yaw Rate Industrial Visit Analog Devices Buy
    ADXRS622BBGZ Analog Devices ±250°/sec Yaw Rate Gyroscope Visit Analog Devices Buy
    EVAL-ADXRS649Z Analog Devices ±20,000°/sec Yaw Rate Gyroscop Visit Analog Devices Buy

    SEC IRF630A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf630a

    Abstract: sec irf630a
    Text: IRF630A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original     		PDF IRF630A O-220 irf630a sec irf630a

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF630A A dvanced Power MOSEET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V H Low Rds(0n) ■ 0.333 £1 (Typ.)


    OCR Scan     		PDF IRF630A QQ3b32fl O-220 7Tb4142 DD3b33D

    IRF630A

    Abstract: No abstract text available
    Text: IR F 63 0A Power MOSFET • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 200 V ^ D S o n = 0 . 4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V I Low Rds(0n) ■ 0.333 £1 (Typ.)


    OCR Scan     		PDF IRF630A IRF630A

    IRF630A

    Abstract: sec irf630a
    Text: Advanced P o w e r MOSFET IR F 6 3 0 A FEATURES D S S • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n lD = ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF IRF630A O-220 IRF630A sec irf630a