schema
Abstract: seb z 50 45195 100N ELAP
Text: SE/SEB/SEB-Z ENCODER ROTATIVI INCREMENTALI INCREMENTAL ROTARY ENCODERS Encoder rotativi incrementali monodirezionali SE e bidirezionali con senza o senza impulso di zero (SEB/SEB-Z). Affidabili, precisi con caratteristiche meccaniche tali da consentirne l’impiego anche nelle condizioni più gravose.
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I-20094
schema
seb z 50
45195
100N
ELAP
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echo ic
Abstract: Edd 44 MC33696 MC9S08RG60
Text: Freescale Semiconductor Application Note Document Number: AN2962 Rev. 1, 05/2007 Echo Monitor for the MC9S08RG60 MCU by: John Logan East Kilbride, Scotland 1 Introduction This document describes how to use the Echo Monitor program to evaluate the performance of the MC33696
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AN2962
MC9S08RG60
MC33696
MC9S08RG60orized
echo ic
Edd 44
MC33696
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FET J133
Abstract: c103 TRANSISTOR equivalent LQFN32 MC33696MOD315EV tdk LAMBDA supply Circuit diagram NX50* 24.19066MHz 433.92 MHZ RF MODULE an3457 RF transceiver 433.92 schematic Car remote keyless entry schematic diagram
Text: Freescale Semiconductor Application Note Document Number: AN3457 Rev. 1, 04/2007 Designing with MC33596/MC33696 A Step-by-Step Approach for a Reference Design by: Laurent Gauthier RF Systems & Application Engineer Toulouse, France 1 Introduction This document presents a step-by-step approach to
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AN3457
MC33596/MC33696
MC33696
MC33596
MC33696,
MC33696.
MC33596-based
FET J133
c103 TRANSISTOR equivalent
LQFN32
MC33696MOD315EV
tdk LAMBDA supply Circuit diagram
NX50* 24.19066MHz
433.92 MHZ RF MODULE
an3457
RF transceiver 433.92 schematic
Car remote keyless entry schematic diagram
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wireless triaxial accelerometer sensor
Abstract: freescale Bootloader an2295 RD3162MMA7260Q hc08 can bus bootloader 3 axes accelerometer AN2295 RF MODULE A-434 triaxial accelerometer sensor ALPs modulator MMA7260Q
Text: 434 MHz Wireless Triple Axis Accelerometer Reference Design ESTAR Designer Reference Manual ESTARRM Rev. 0 02/2007 freescale.com 434 MHz Wireless Triple Axis Accelerometer Reference Design Designer Reference Manual by: Petr Gargulák and Pavel Lajšner Freescale Czech Systems Laboratories
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M37420
Abstract: m37451 sr 4416 M50734 PH m 8816 M37421 m37417 M37524 BA 8A16 m37409
Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY 740 Family Software Manual MITSUBISHI ELECTRIC keep safety first in your circuit designs ! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor
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J24532
M37420
m37451
sr 4416
M50734
PH m 8816
M37421
m37417
M37524
BA 8A16
m37409
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cr2032 battery HOLDER
Abstract: CR2032 holder freescale Bootloader an2295 NX3225GA 3 axes accelerometer RD3162MMA7260Q AN1611 MC9S08QG8CDTE AN3162 interfacing microcontroller with image sensor
Text: Freescale Semiconductor Application Note AN3162 Rev 0, 02/2007 434 MHz Wireless Triple Axis Accelerometer Reference Design ESTAR by: Petr Gargulák and Pavel Lajšner Rožnov Czech System Center Czech Republic The 434 MHz Wireless Triple Axis Accelerometer
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AN3162
AN3112
RD3112MMA7260Q)
MMA7260QT
MC9S08QG8,
cr2032 battery HOLDER
CR2032 holder
freescale Bootloader an2295
NX3225GA
3 axes accelerometer
RD3162MMA7260Q
AN1611
MC9S08QG8CDTE
AN3162
interfacing microcontroller with image sensor
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M50734
Abstract: M37420 m37418 mitsubishi machine instruction 740 family BA 4916 sr 4416 M37424 hitachi transistor 9016 M37524 M37408
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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ba 4916
Abstract: m37451 A516 AD12 B616 E616 m372xx M50734 transistor b716 740 Family Software Manual
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ09B0322-0200
ba 4916
m37451
A516
AD12
B616
E616
m372xx
M50734
transistor b716
740 Family Software Manual
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BBS 8500
Abstract: C901 c901 transistor 801B variable ICON17 pla 007a 38C3 T12M "7700 Family" Mitsubishi EW22
Text: Software UART MITSUBISHI ELECTRIC SEMICONDUCTORS David Procter 22/07/99 Application Note Software UART David Procter Senior Applications Engineer Mitsubishi Electric Europe Semis.info@meuk.mee.com Figure 1: Test board showing RS-232 transceiver Revision 1.1 16th July, 1999.
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RS-232
BBS 8500
C901
c901 transistor
801B variable
ICON17
pla 007a
38C3
T12M
"7700 Family" Mitsubishi
EW22
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m50740
Abstract: M37418 M37420 mitsubishi machine instruction 740 family M50740A-XXXSP M37417 M37524 M37428 M50741XXXSP bbc 127 324
Text: M ITSUBISHI MICROCOMPUTERS 740 FAMILY SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 740 FAMILY CPU CORE BASIC FUNCTIONS Stack pointer S Each series of the 740 Family uses the standard 740 Family instruction set. The functions of the 740 Family CPU core are explained below. The multiply and divide instructions
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DD2324D
m50740
M37418
M37420
mitsubishi machine instruction 740 family
M50740A-XXXSP
M37417
M37524
M37428
M50741XXXSP
bbc 127 324
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22-E5
Abstract: MELPS 740 MELPS-740 mitsubishi series 740 software
Text: M ITSUBISHI MICROCOMPUTERS M ELPS 740 SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER MELPS 740 CPU CORE BASIC FUNCTIONS “ 1” , the value contained in inde x re g iste r X be com es the Each serie s of the M ELPS 740 Fam ily uses the standard ad dress for the second OPERAND.
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I--30
22-E5
MELPS 740
MELPS-740
mitsubishi series 740 software
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Untitled
Abstract: No abstract text available
Text: HFA3724 HARRIS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator January 1997 Description Features Integrates all IF Transmit and Receive Functions The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF modems employing Direct Sequence
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HFA3724
400MHz
10MHzto
400MHz
HFA3724
HFA3722
500MHz
300MHz
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Untitled
Abstract: No abstract text available
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
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40841
Abstract: 40841 MOSFET
Text: m U J H a r r is S E M I C O N D U C T O R FSL9230D, FSL9230R w ' — v ^ W ^ Radiation Hardened, SEGR Resistant P-ChannelPowerMOSFETs June 1997 Features Package • 3A,-200V, rDS oN = 1-500 Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event
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FSL9230D,
FSL9230R
O-205AF
-200V,
36MeV/mg/cm2
1-800-4-HARRIS
40841
40841 MOSFET
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215730
Abstract: No abstract text available
Text: Index by P a rt N u m b e r Index Part* Type pg Part# Type 01.0001 B2N 215 02.0014 BL30N 216 050204 SP10AR-N/35 223, 257 08.0111 Mu 0.8d/M20 312 01.0002 B3N 215 02.0015 BL35N 216 050205 SP10AR-N/50 223,257 08.0112 Mu 0.8d/M24x2 312 01.0003 B4N 215 BL40N 216
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BL30N
SP10AR-N/35
8d/M20
BL35N
SP10AR-N/50
8d/M24x2
BL40N
SP14AR-N/50
BL45N
SP14AR-N/70
215730
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Untitled
Abstract: No abstract text available
Text: S h a r r is S E M I C O N D U C T O R FSS430D, FSS430R ^ " w W M • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 3A, 500V, r D s O N ! 2.700 • Total Dose Meets Pre-Rad Specifications to 100K RAD(Si) Safe Operating Area Curve for Single Event Effects
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FSS430D,
FSS430R
36MeV/mg/cm2
O-257AA
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: JANSR2N7408 Data Sheet Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4637 Features • 9A, 500V, rog oi\| = 0.600Q • Total Dose The Discrete Products Operation of Harris Semiconductor
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JANSR2N7408
FSF450R4,
1-800-4-HARRIS
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E102h
Abstract: No abstract text available
Text: JANSR2N7398 S MAEESS August 1997 Formerly Available As FSL430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
1-800-4-HARRIS
E102h
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 HARRIS S E M I C O N D U C T O R August 1997 Formerly Available As FSS430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, ros ON = 2.70£2 The Discrete Products Operation of Harris Semiconductor
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JANSR2N7402
1-800-4-HARRIS
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BCK07
Abstract: No abstract text available
Text: 85 190 I PS ‘ON 0NIMVUa £#M^ DESIGNATION F 0 - B N 6 A 1 8 - 6 S - S E B C K ( *— ) - R-r PRODUCTS CONFORMING TO CO NNECTOR TYPE 1 RoHS DIRECTIVE_ RoHSfëminDn PLUG S IZE(18) CABLE CLAMP SIZE PLEASE REFER TO DIMENSION CHART NO.OF SOCKET CONTACT
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F0-BN6A18-6S-SEBCK(
18-6S
SJ106158
BCK07
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m50740
Abstract: MELPS 740 "SERIES MELPS 740" SERIES MELPS 740 SOFTWARE USERS MANUAL M50734SP SERIES MELPS 740 USERS MANUAL m37450 SERIES MELPS 740 M50741 M50740A-XXXSP
Text: FOREWORD This software manual is for users of the MELPS 740 series. Register structure, addressing mode and instructions are introduced in each section. The enhanced instruction set with enhanced data and memory operations enable efficient programming. Please refer to the “USER'S MANUAL”
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M37450
m50740
MELPS 740
"SERIES MELPS 740"
SERIES MELPS 740 SOFTWARE USERS MANUAL
M50734SP
SERIES MELPS 740 USERS MANUAL
SERIES MELPS 740
M50741
M50740A-XXXSP
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R FSL430D, FSL430R " M W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL430D,
FSL430R
100KRADS
1-800-4-HARRIS
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406DJ
Abstract: No abstract text available
Text: DG406/407 Vishay Siliconix 16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • • • • • • • • • Low On-Resistance— rDs 0n : 50 Q Low Charge Injection—Q: 15pC
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DG406/407
16-Ch/Dual
DG406
16-channel
DG407
AN203
S-00399--
13-Sep-99
406DJ
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R FSS430D, FSS430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Jun e 1997 Package Features • 3A, 500V, rDS ON = 2.70Q TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD(Si) • Single Event Safe Operating Area Curve for Single Event Effects
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FSS430D,
FSS430R
O-257AA
1-800-4-HARRIS
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