SDT96309
Abstract: SDT13305 SDT12303 SDT12302 2n6561 SDT13301 SDT13302 SDT13303 2N6546 2N6547
Text: V PT @ 1C CE @ IC 1TMHz Polarity sus (Peak) MIN/ (sat) (W) VOLTS AMPS MAX AMPS MAX AMPS MIN. MAX. 10/ 2N6546 * NPN 300 30 5.0 1.50 10.0 6.0 175 60 12/ 2N6547 * NPN 400 30 5.0 1.50 10.0 6.0 175 60 10/ 2N6560 NPN 450 15 5.0 0.75 5.0 10.0 220 40 10/ 2N6561
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2N6546
2N6547
2N6560
2N6561
SDT02353
SDT02354
SDT02355
SDT12301
SDT12302
SDT12303
SDT96309
SDT13305
SDT12303
SDT12302
2n6561
SDT13301
SDT13302
SDT13303
2N6546
2N6547
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SDT96309
Abstract: sdt96
Text: -j/otttron_^ Eom gir ©at&ìl©© S W IT C H T R O N P O W E R T R A N S IS T O R S Devices. Inc DEVICE POLARITY TYPE v C EO su s 'C ( P .i k ) hpj; & 'c VC E (sat) ifM H j PT (W ) V O LTS AM PS MIN/MAX AM PS M AX. A M PS MIN. MAX 30
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2N6546*
2N6547*
2N6560
2N6561
SDT02353
SDT02354
SDT02355
SDT12301
SDT12302
SDT12303
SDT96309
sdt96
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Untitled
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 SOL IT R ON D E V I C E S [^ © Q D © ? INC 95D 02871 TS D E | s 3 t . ö b O E 0 0 D E S 71 1 © Ä 1F Ä 1L © © 13 | 7~— Z 3 -/S - -JfèlitrQ n _ Devices, Inc. M EDIUM TO HIGH VO LTA G E, HIGH CURRENT CHIP N U M BER
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SDT96308
Abstract: sdt96
Text: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
cont10V
800pF
800pF
JAN2N5250,
JAN2N5251,
SDT96308
sdt96
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TO114
Abstract: No abstract text available
Text: SOLITRON DEVICES "is INC de -ÆsiZran I ö3bßboa pmmw&ï ä t t ä l © Devices. Inc. SWITCHTROIM POW ER TRANSISTORS v CEO(sus VOLTS •C(Peak) AMPS hpE @ •c MIN/MAX AMPS NPN NPN NPN NPN PNP 300 400 450 300 -300 30 30 15 20 -15 10/60 12/60 10/40 10/50
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SDT02354
SDT02355
SDT12301
SDT12302
SDT12303
SDT13301
SDT13302
SDT13303
SDT13304
SDT13305
TO114
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transistor 05c
Abstract: 800PF 2N6325 SDT96301 SDT96308 8A550A
Text: ^/olitron [p|£ì |D lJ)(ST Ä T Ä IL © ( M EDIUM TO HIGH VOLTAGE, HIGH CURRENT Devices. Inc. CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 96) cf] CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
transistor 05c
800PF
2N6325
SDT96301
SDT96308
8A550A
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