Contextual Info: SDT06623 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2N5552

Contextual Info: -Jfotttron r a t y © ¥ @ Ä ¥ Ä 1L ® LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

2N5552

Abstract: C-38 SDT06523 SDT06623 npn silicon transistor
Contextual Info: iF^@ Qj} Tr ©m m m i ^Ælltran LOW TO MEDIUM VOLTAGE, FAST SWITCHING Devices, Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available

TIC 115

Abstract: BD117 to-53 HSE2000 ss2017 2N396 tic 115 d bd112
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) Max (W) hFE Min *T (Hz) Max k>N Max (A) (8) ICBO r (CE)sa« 'Oper Max (Ohms) Max <°C) Package Style D vices 20 Watts or Mor . . . .5 . . . -10 . . .15 20 -25 -30

C3883

Contextual Info: 8368602 SOL ITRON D E V I C E S INC_ 95D 0 2 8 2 9 DEJfl3bflbDS ODDaflET D 2 7"T " IP ia O E X U K g T T Æ i ? / ^ [ L © 1 Devices. Inc. LOW TO M EDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER