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    SDF9240 Search Results

    SDF9240 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF9240 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = -11, Idm Pulsed (A) = -44, RDS (On) (Ohms) =... Scan PDF
    SDF9240JAAD Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JAAS Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JAAU Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JABD Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JABS Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JABU Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JDAD Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JDAS Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF9240JDAU Solitron Devices P-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF9240 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PRODUCT Æ lltran DEVICES,INC. 2301 ELECTRONICS WAY • WEST PALM BEACH, FLORIDA 33 407 TEL : 4 0 7 8 4 0 - 4 3 1 1 • TLX: 5 J - 3 4 3 5 « F A X : ( 4 0 7 ) 8 6 3 - 5 9 4 6 P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D r a i n - s o u r c e Vo 1 t . ( 1 )


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ lltro n :ÂL0< D E V IC ES.I N C . 3301 ELECTRONICS WAY • WEST PALM SEACH. FLORIDA 33407 T E L . f407 848-431I • TLX: 51-3435 • FAX: 407) 863-5946 P - CHANNEL ENHANCEMENT M0 5 FET ABSOLUTE MAXIMUM R A TING S PARAMETER UNITS SYMBOL D rain-source


    OCR Scan     		PDF 848-431I -200V

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC ^rniitron 4ßE D devices.inc. m MfrS# a K A fi& i'a « ® » :'W e S & s ß3bflbGE DDD35Ö7 TIS « S O D PH yyyu a <ü a 1 ailOQ P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l VDSS Drain-Gate Voltage


    OCR Scan     		PDF DDD35Ã 00A/jJLS

    SDF9240

    Abstract: BA57
    Text: Æutron PRODUCT DEVICES.INC. P-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER' SYMBOL Drain-source Vo 1t . 1 Drain-Gate Vo 1tage ( R g s - I . O M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 C) Drain Current Pulsed(3)


    OCR Scan     		PDF -200V SDF9240 MIL-S-19500 BA57