SDF450 Search Results

Contextual Info: PRODUCT Æ iitron CÂTÂLOQ 3 3 0 1 E L E C T R O N I C S WA Y , T E L : 407 048-4311 N-CHANNEL ENHANCEMENT MÜS FET 500V, 13A, 0.40 Q SDF450 SDF450 ABSOLUTE JAA JAB (gH TERMINAL Drain Current Total Power G 1 2 3 H GATE 1 DRAIN DRAIN 2 SOURCE SOURCE 3 GATE

1D13A

Abstract: SDF450
Contextual Info: PRODUCT Ætltron CATALOG , N-CHANNEL ENHANCEMENT MOS FET 500V, 13A, 0 . 40 n ABSOLUTE MAXIMUM RATINGS PARAMETER JAA JAB SDF450 SDF450 FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS

solitron rectifier

Abstract: SOLITRON Voltage Regulator SDF450JAAXHSN T0-257AA IN 5008 DIODE
Contextual Info: PART NUMBERING SYSTEM EXAMPLE: SDF450JAAXHSN F SOLITRON DEVICES DESIGNATION 450 JAA X H 5 N GATE-SOURCE ZENER U S D OH.Y FOR MOSFET = = * = = ELECTRICAL CHARACTERISTICS MOSFET IGBT RECTIFIER. ULTRA FAST RECTIFIER GENERAL PURPOSE RECTIFIER. SCHOTTKY VOLTAGE REGULATOR

SDF450

Contextual Info: PRODUCT Æ lltro n CATALO' N-CHANNEL ENHANCEMENT MOS FET 500V, 13 A , 0 . 4 0 0 SDF450 SDF450 ABSO LU TE • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENOING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE

Contextual Info: PRODUCT Æ iitran CÂ TÂL0 3 30 1 ELECTRONICS WAY. N-CHANNEL ENHANCEMENT MOS FET 500V, 13 A , 0 . 4 0 Q MAXIMUM R A T I N G S Vo 1 t . 1 Drain-G ate Voltage ( Rgs = 1 •O M n ) ( 1 ) Gate-Source Voltage Cont inuous Drain Current Continuous (Tc = 25°C)

SDF450

Contextual Info: SDP/F450 Green Product S a mHop Microelectronics C orp. Preliminary 500V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS 500V ID 14A G D S Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 0.4 @ VGS=10V,ID=7A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

Contextual Info: SERIES 7 / 1 6 COAXIAL CONNECTORS Description Contents SUHNER 7 /1 6 connectors are mechanically very rugged coaxial connectors with screw lock. They have a characteristic impedance of 5 0 Q and are applicable with excellent electrical properties up to 7.5 GHz.