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    Text: SDF12N90GAFVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)900 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)-55


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