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    SDC2UV6482 Search Results

    SDC2UV6482 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SDC2UV6482-100T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482-125T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482-67T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482-84T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482A-100T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482A-125T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482A-67T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482A-84T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482C-100T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482C-125T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482C-67T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482C-84T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482D-100T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482D-125T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482D-67T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF
    SDC2UV6482D-84T-S Fujitsu 16MByte (2M x 64) CMOS Synchronous DRAM Module Original PDF

    SDC2UV6482 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: May 1997 Revision 1.0 data sheet SDC2UV6482D- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482D-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.


    Original     		PDF SDC2UV6482D- 16MByte 16-megabtye 168-pin, MB81117822E- 125MHz) 100MHz) MP-SDRAMM-DS-20513-6/97

    64x64

    Abstract: No abstract text available
    Text: June 1997 Revision 1.1 data sheet SDC2UV6482C- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482C-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.


    Original     		PDF SDC2UV6482C- 16MByte 16-megabtye 168-pin, MB81117822A- 125MHz) 100MHz) 12nsinaccuracies. 64x64

    Untitled

    Abstract: No abstract text available
    Text: March 1997 Revision 2.1 DATA SHEET SDC2UV6482 A -(67/84/100/125)T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.


    Original     		PDF SDC2UV6482 16MByte 16-megabtye 168-pin, MB81117822A- 125MHz) 100MHz) MP-SDRAMM-DS-20318-3/97

    "write only memory"

    Abstract: 8MB SDRAM MPC603UM/AD SDRAM Controller SDRAM DIMM 1997 sdram pcb layout MPC106 MPC950 MPC972 MPC980
    Text: AN1722/D Motorola Order Number 12/97 REV 1 Application Note AR Y SDRAM System Design using the MPC106 by Gary Milliorn RISC Applications 1.1 Overview PR EL IM There are numerous possibilities available in designing systems, although most will probably fall into the typical category shown in Figure 1. This document refers to


    Original     		PDF AN1722/D MPC106 "write only memory" 8MB SDRAM MPC603UM/AD SDRAM Controller SDRAM DIMM 1997 sdram pcb layout MPC106 MPC950 MPC972 MPC980

    MPC106

    Abstract: mpc980 microstripline FR4 MPC740 MPC7400 MPC7410 MPC745 MPC750 MPC755 MPC972
    Text: Freescale Semiconductor, Inc. AN1722/D Rev. 1.1, 6/2003 Freescale Semiconductor, Inc. SDRAM System Design Using the MPC106 by Gary Milliorn RISC Applications This document discusses the implementation of an SDRAM-based memory system using the MPC106. The MPC106 PCI Bridge/Memory Controller provides a bridge between the


    Original     		PDF AN1722/D MPC106 MPC106. MPC106 MPC603e, MPC740, MPC750, MPC745, MPC755, MPC7400 mpc980 microstripline FR4 MPC740 MPC7410 MPC745 MPC750 MPC755 MPC972

    D11010

    Abstract: SDCUV6482 D11010KFCS LD11 LD12 MPC8260 MPC947 DIN41612 128 D25-CRCW1206 SDRAM16M
    Text: 12/17/01 Rev 0.1 WITH MPC8266ADS - PCI User’s Manual Board Rev. PROTOTYPE-B Semiconductor Products Sector Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can


    Original     		PDF MPC8266ADS D11010 SDCUV6482 D11010KFCS LD11 LD12 MPC8260 MPC947 DIN41612 128 D25-CRCW1206 SDRAM16M

    mb87020

    Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
    Text: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,


    Original     		PDF SD-SG-20342-9/96 mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER

    mc14558

    Abstract: bk 60 fuse smd MIC29501 application pm5350 rele smd TRANSISTOR c104 LD11 LD12 MPC8260 MPC8260ADS
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. 11/1999 Rev 0.213 ª MPC8260 PowerQUICC II ADS UserÕs Manual ª For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. PowerQUICC II is a trademark of Motorola, Inc.


    Original     		PDF MPC8260 RS/6000 mc14558 bk 60 fuse smd MIC29501 application pm5350 rele smd TRANSISTOR c104 LD11 LD12 MPC8260ADS

    Untitled

    Abstract: No abstract text available
    Text: Fujitsu Microelectronics, Inc. offers a wide variety of Random Access Memory products. Among these are memory modules utilizing Fujitsu's line of Synchronous DRAMs. Fujitsu's SDRAM modules are offered in a variety of JEDEC standard form factors, densities and organizations for use in PC's,


    Original     		PDF 144-Pin 1Mx64SD) SOB1UV6412 2Mx64SD) SOB2UV6412 SOB2UV6482 168-Pin 2Mx72SD) SDC2UV7282

    pinout sc09

    Abstract: smd diode U12 c526 transistor C639 AP3122 hp r707 smd c646 smd pushbutton footprint CR21-102J pci connector footprint 82C42PC
    Text: PowerPC 6xx/7xx CPC700 Reference Board Manual Version 2.4 Second Edition March 1999 The following paragraph does not apply to the United Kingdom or any country where such provisions are inconsistent with local law: INTERNATIONAL BUSINESS MACHINES CORPORATION PROVIDES THIS DOCUMENT “AS IS”


    Original     		PDF CPC700 pinout sc09 smd diode U12 c526 transistor C639 AP3122 hp r707 smd c646 smd pushbutton footprint CR21-102J pci connector footprint 82C42PC

    motorola 5118 user manual

    Abstract: motorola - 5118 user manual ZENER A29 SOT 23-5 la22 80 pin simm flash programmer 501s43w104mv4e A29 SMD DIODE SMD b14 Flash SIMM 80 programmer zener Diode B23
    Text: 11/1999 Rev 0.213 ª MPC8260 PowerQUICC II ADS UserÕs Manual ª PowerQUICC II is a trademark of Motorola, Inc. Mfax is a trademark of Motorola, Inc. The PowerPC name, the PowerPC logotype, PowerPC 601, PowerPC 603, PowerPC 603e, PowerPC 604, PowerPC 604e, and RS/6000 are trademarks of


    Original     		PDF MPC8260 RS/6000 motorola 5118 user manual motorola - 5118 user manual ZENER A29 SOT 23-5 la22 80 pin simm flash programmer 501s43w104mv4e A29 SMD DIODE SMD b14 Flash SIMM 80 programmer zener Diode B23

    MPC106

    Abstract: MPC950 MPC972 MPC980 W42B972 delay balancing in wave pipeline sdram pcb layout guide
    Text: AN1722/D Motorola Order Number 12/97 REV 1 Application Note AR Y SDRAM System Design using the MPC106 by Gary Milliorn RISC Applications 1.1 Overview PR EL IM There are numerous possibilities available in designing systems, although most will probably fall into the typical category shown in Figure 1. This document refers to


    Original     		PDF AN1722/D MPC106 MPC106 MPC950 MPC972 MPC980 W42B972 delay balancing in wave pipeline sdram pcb layout guide

    atx power connector for fujitsu siemens

    Abstract: RS8A1002J PHOTODIODE SIEMENS B61 MF3 IC D41 smd transistor dh25 Flash SIMM 80 programmer C2681 C2761 TAJC106K025R kingbright n3
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. WITH MPC8266ADS - PCI User’s Manual Board Rev. PROTOTYPE-B Semiconductor Products Sector For More Information On This Product, Go to: www.freescale.com 12/17/01 Rev 0.1 Freescale Semiconductor, Inc.


    Original     		PDF MPC8266ADS incidenC41 atx power connector for fujitsu siemens RS8A1002J PHOTODIODE SIEMENS B61 MF3 IC D41 smd transistor dh25 Flash SIMM 80 programmer C2681 C2761 TAJC106K025R kingbright n3

    marking code R74 SMD Transistor

    Abstract: DIODE SMD b14 Zener diode smd marking U4 diode smd marking BUF c147 b14 smd diode Zener diode smd marking code C24 siemens c72 pinout 501s43w104mv4e Motorola transistor smd marking codes Motorola diode smd marking codes
    Text: 3/1999 Rev 0.1 MPC8260 PowerQUICC II ADS User’s Manual ™ PowerQUICC II is a trademark of Motorola, Inc. Mfax is a trademark of Motorola, Inc. The PowerPC name, the PowerPC logotype, PowerPC 601, PowerPC 603, PowerPC 603e, PowerPC 604, PowerPC 604e, and RS/6000 are trademarks of


    Original     		PDF MPC8260 RS/6000 marking code R74 SMD Transistor DIODE SMD b14 Zener diode smd marking U4 diode smd marking BUF c147 b14 smd diode Zener diode smd marking code C24 siemens c72 pinout 501s43w104mv4e Motorola transistor smd marking codes Motorola diode smd marking codes

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU June 1997 Revision 1.0 data sh e e t SDC2UV6482D- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6482D -(67/84/100/12 5 )T -S is a high performance, 16-m egabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC2UV6482D- 16MByte 6482D 168-pin, B81117822E-

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU June 1997 Revision 1.0 data sheet SDC2UV6482D- 67/84/100/125 T-S 16MByte (2 M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482D-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC2UV6482D- 16MByte 16-megabtye 168-pin, B81117822E- V6482D- 168-pin

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU June 1997 Revision 1.0 data sheet SDC2UV6482D- 67/84/100/125 T-S 16MByte (2 M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482D-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC2UV6482D- 16MByte 16-megabtye 168-pin, B81117822E- 67Mhz 84Mhz 100Mhz

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU May 1997 Revision 1.0 data sheet SDC2UV6482D- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6482D -(67/84/100/125)T-S is a high performance, 16-m egabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC2UV6482D- 16MByte 6482D 168-pin, B81117822E- 67Mhz 84Mhz 100Mhz 125Mhz

    Untitled

    Abstract: No abstract text available
    Text: January 1997 Revision 2.0 DATASHEET SDC2UV6482 A -(67/84/100/125) T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.


    OCR Scan     		PDF SDC2UV6482 16MByte 16-megabtye 168-pin, MB81117822A- 125MHz) V6482 168-pin

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU June 1997 Revision 1.1 data sheet SDC2UV6482C- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6482C -(67/84/100/125)T-S is a high performance, 16-m egabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC2UV6482C- 16MByte 6482C 168-pin, B81117822A- Cycle512K 67Mhz 84Mhz 100Mhz

    Untitled

    Abstract: No abstract text available
    Text: cP FUJI July 1996 Revision 1.0 D A T A S H E E T - ' SDC2UV6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC2UV6482- 16MByte 16-megabtye 168-pin, MB81117822A- 200mV. V6482- 168-pin

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU June 1997 Revision 1.1 data sh e e t SDC2UV6482C- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6482C -(67/84/100/12 5 )T -S is a high performance, 16-m egabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC2UV6482C- 16MByte 6482C 168-pin, B81117822A

    Untitled

    Abstract: No abstract text available
    Text: January 1997 Revision 2.0 DATASHEET SDC4UV6482 A -(67/84/100/125) T-S 32MByte (4Mx 64) CMOS Synchronous DRAM Module General Description The SDC4UV6482(A)-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.


    OCR Scan     		PDF SDC4UV6482 32MByte 32-megabtye 168-pin, MB81117822A- 125MHz) 10neasuring 200mV.