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    MARKING S1G

    Abstract: SCT595 SMBTA06M SMBTA56M
    Text: SMBTA06M NPN Silicon AF Transistor 4  High breakdown voltage  Low collector-emitter saturation voltage 5  Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings


    Original     		PDF SMBTA06M SMBTA56M VPW05980 SCT595 EHP00821 EHP00819 EHP00820 EHP00815 Nov-30-2001 MARKING S1G SCT595 SMBTA06M SMBTA56M

    BCP70M

    Abstract: SCT595
    Text: BCP70M PNP Silicon AF Power Transistor 4 • For AF driver and output stages • High collector current 5 • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595 Maximum Ratings E1 and E2 connected externaly


    Original     		PDF BCP70M VPW05980 SCT595 Jul-02-2001 BCP70M SCT595

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    SCT595

    Abstract: AEB02662 AEP02661 AES02663 SCT-595 4295G
    Text: Low-Drop Voltage Regulator TLE 4295 Target Data Features • • • • • • • • • • • • Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ≤ ± 4% Very low drop voltage Output current: 30 mA Power fail output Low quiescent current consumption


    Original     		PDF SCT-595 4295G 4295G AES02663 SCT595 AEB02662 AEP02661 AES02663 SCT-595

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    BCP51M

    Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 SCT-595
    Text: BCP51M.BCP53M PNP Silicon AF Transistor 4  For AF driver and output stages 5  High collector current  Low collector-emitter saturation voltage 3  Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs


    Original     		PDF BCP51M. BCP53M BCP54M. BCP56M VPW05980 BCP51M BCP52M SCT595 BCP51M BCP52M BCP53M BCP54M SCT595 SCT-595

    SCT-595

    Abstract: No abstract text available
    Text: BCP 51M . BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M.BCP 56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package


    Original     		PDF VPW05980 SCT-595 EHP00262 EHP00260 EHP00263 EHP00264 Oct-20-1999 SCT-595

    SCT-595

    Abstract: 5456 sct595 50
    Text: BCP 54M . BCP 56M NPN Silicon AF Transistors 4  For AF driver and output stages 5  High collector current  Low collector-emitter saturation voltage 3  Complementary types: BCP 51M.BCP 53M PNP 2 1 VPW05980 Type Marking Pin Configuration Package BCP 54M


    Original     		PDF VPW05980 SCT-595 EHP00269 EHP00267 EHP00270 EHP00271 Oct-20-1999 SCT-595 5456 sct595 50

    BCP51M

    Abstract: BCP53M BCP54M BCP55M BCP56M SCT595 sct595 50
    Text: BCP54M.BCP56M NPN Silicon AF Transistors 4  For AF driver and output stages 5  High collector current  Low collector-emitter saturation voltage 3  Complementary types: BCP51M.BCP53M PNP 2 1 VPW05980 Type Marking Pin Configuration Package BCP54M BAs


    Original     		PDF BCP54M. BCP56M BCP51M. BCP53M VPW05980 BCP54M BCP55M SCT595 BCP51M BCP54M BCP55M BCP56M SCT595 sct595 50

    SOT323 reflow

    Abstract: All smd Packages sct-595 sot-23 dual infrared transistor CECC 00802 reflow profile 00802 SC-75 SCT-595 sod323 reflow
    Text: Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be


    Original     		PDF SCT-595 HLG09053 SCT-598 HLG09183 HLG05516 HLG05520 MW-12 HLG05819 MW-16 HLG09056 SOT323 reflow All smd Packages sct-595 sot-23 dual infrared transistor CECC 00802 reflow profile 00802 SC-75 SCT-595 sod323 reflow

    All smd Packages sct-595 sot-23

    Abstract: HLG05531 HLG05532 HLG09054 SCT-595
    Text: Notes on Processing Component Placement The ability to place semiconductors depends very much on the type involved. Up to a pitch size of 1.27 mm, mechanical centering by tools of an automatic component placement machine suffices, e.g. jaws and centering units. Multiple-pin ICs have to be placed


    Original     		PDF HLG09183 HLG05516 HLG05818 HLG05520 MW-12 HLG05819 MW-16 HLG09056 All smd Packages sct-595 sot-23 HLG05531 HLG05532 HLG09054 SCT-595

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF 25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT

    142001

    Abstract: BFP490 SCT595 SCT-595
    Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF BFP490 VPW05980 SCT595 200mA Aug-14-2001 142001 BFP490 SCT595 SCT-595

    TA 490

    Abstract: SCT-595 490 transistor 09326
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Dec-13-1999 TA 490 SCT-595 490 transistor 09326

    093.266

    Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers  Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz  Transition frequency fT > 17 GHz  Gold metallization for high reliability  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Nov-17-2000 093.266 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490

    ic 7912

    Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
    Text: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,


    Original     		PDF D-81541 BGB550 10max ic 7912 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 SCT595 TRANSISTOR C 557 B transistor K 1352

    TLE4250G

    Abstract: AEP02581
    Text: SIEMENS L ow -D rop V o ltag e T racker TLE 4250 G T arg et Data Features • • • • • • • • • • • Output tracking tolerance < ± 0.5% Low drop voltage Wide operation range: up to 40 V Wide temperature range: - 40 °C < < 150 °C Output protected against short circuit


    OCR Scan     		PDF Q67006-A9351 SCT-595 TLE4250G AEP02581

    B7AD

    Abstract: j599 Y645 smd code 12.00 Jn AED02191 AED02192 AEP02253 AES02190 Q67006-A9304 SCT595
    Text: SIEMENS • ÖE3St,0S OOc3b7ED 2 b 5 L o w -D rop V o ltage R egulator TLE 4286G P relim in ary Data Sheet 1 Overview 1.1 Features • • • • • • • Wide operation range: 6 V to 45 V Wide temperature range: - 40 °C to 150 °C Low quiescent current consumption: 50 |iA


    OCR Scan     		PDF 4286G Q67006-A9304 4286G out193 AED02194 8235b05 TLE4286G SCT595 GPW05997 B7AD j599 Y645 smd code 12.00 Jn AED02191 AED02192 AEP02253 AES02190 SCT595

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC P71M NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Q62702-C2597 LU II CO PCs O li BCP71M


    OCR Scan     		PDF BCP71M SCT-595 Q62702-C2597 20Collector-base

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP70M PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Package o II in h CO Q62702-C2596 h PBs IXI BCP 70M Pin Configuration CO Ordering Code


    OCR Scan     		PDF BCP70M Q62702-C2596 SCT-595 300ns;

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type


    OCR Scan     		PDF Q62702-A3474 SCT-595 300ns;