IRGPS4067
Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Text: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM
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IRGPS4067DPbF
IRFPS37N50A
IRGPS4067
irgps4067d
CI 4000
J500
IRGPS
IRGPS4067DPBF
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Untitled
Abstract: No abstract text available
Text: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW
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15N120B
O-247
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din IEC 68
Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types
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IXSH15N120AU1
Abstract: IC-90
Text: IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A VCES = 1200 V VCE sat = 4.0 V "S" Series - Improved SCSOA Capability C G E Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ
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IXSH15N120AU1
-100A/
D-68619;
IXSH15N120AU1
IC-90
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1MB08-120
Abstract: No abstract text available
Text: 1MB08-120,1MB08D-120, Molded IGBT 1200V / 8A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications
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1MB08-120
1MB08D-120,
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diode 10a 400v
Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF
Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4064DPbF
O-220AB
diode 10a 400v
ultrafast diode 10a 400v
600v 10A ultra fast recovery diode
IRF1010
IRGB4064DPBF
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80011a
Abstract: marking code 11A IRFI840G
Text: PD - 97114 IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM
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IRGI4061DPbF
IRFI840G
O-220
80011a
marking code 11A
IRFI840G
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Thunderbolt IGBT
Abstract: No abstract text available
Text: APT60GT60BR_SR APT60GT60BR APT60GT60SR 600V Thunderbolt IGBT B T • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated • RBSOA and SCSOA Rated MAXIMUM RATINGS Symbol 24 D3PAK 7 C The Thunderbolt IGBT® is a new generation of high voltage power IGBTs.
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APT60GT60BR
APT60GT60BR
APT60GT60SR
150KHz
Thunderbolt IGBT
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1MBH50D-060 equivalent
Abstract: IGBT 1MBH50-060
Text: 1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications
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1MBH50-060
1MBH50D-060,
1MBH50D-060 equivalent
IGBT 1MBH50-060
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Untitled
Abstract: No abstract text available
Text: 1MB10-120,1MB10D-120, Molded IGBT 1200V / 10A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications
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1MB10-120
1MB10D-120,
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IRGB4060D
Abstract: IRF1010 CT4-15
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
O-220AB
IRGB4060D
IRF1010
CT4-15
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AUPS4067D1
Abstract: transistor Kd 505 12v switching transistor AUIRGPS4067D1 transistor c s z 44 v AUIRGPS4067
Text: PD - 97726A AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • IC = 160A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA
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7726A
AUIRGPS4067D1
Super-247
AUPS4067D1
transistor Kd 505
12v switching transistor
AUIRGPS4067D1
transistor c s z 44 v
AUIRGPS4067
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igbt 600V 30A
Abstract: igbt 300V 30A 1MB30-060 1MBH30D-060 IC100 dt90A
Text: 1MB30-060,1MBH30D-060, Molded IGBT 600V / 30A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up Applications
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1MB30-060
1MBH30D-060,
igbt 600V 30A
igbt 300V 30A
1MBH30D-060
IC100
dt90A
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1MBG05D-060
Abstract: 1MBC05D-060
Text: 1MBC05-060,1MBC05D-060, 1MBG05D-060 Molded IGBT 600V / 5A Molded Package Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up
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1MBC05-060
1MBC05D-060,
1MBG05D-060
1MBG05D-060
1MBC05D-060
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FGW30N60VD
Abstract: No abstract text available
Text: / FGW30N60VD Discrete IGBT Discrete IGBT High-Speed V series 600V / 30A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive
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FGW30N60VD
FGW30N60VD
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A5N9
Abstract: No abstract text available
Text: ECO-PACTM 2 IGBT Module IC25 = 18 A VCES = 1200 V VCE sat typ. = 2.3 V PSII 15/12* Preliminary Data Sheet S9 L9 N5 A5 N9 R5 D5 X18 W14 H5 A1 F3 G1 C1 K10 K13 PSII 15/12* K12 IGBTs Symbol VCES VGES IC25 IC80 I CM VCEK tSC (SCSOA) Ptot Symbol *NTC optional Conditions
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1MBH15D-060
Abstract: No abstract text available
Text: 1MBH15D-060 Molded IGBT 600V / 15A Molded Package Outline drawings, mm TO-3PL Features • Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness RBSOA, SCSOA etc. · Comprehensive line-up
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1MBH15D-060
IC110
1MBH15D-060
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FGW50N60H
Abstract: FDRW25S60L FGW50N60 fgw50
Text: / FGW50N60H Discrete IGBT Discrete IGBT High-Speed V series 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply
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FGW50N60H
FGW50N60H
FDRW25S60L
FGW50N60
fgw50
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FGW40N120VD
Abstract: FGW40N120
Text: / FGW40N120VD Discrete IGBT Discrete IGBT High-Speed V series 1200V / 40A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive
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FGW40N120VD
FGW40N120VD
FGW40N120
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DC Motor control IGBT FUJI ELECTRIC
Abstract: 1MBH20D-060 fuji electric fuji igbt fuji servo drive fuji igbt 300v 20a igbt 600v 20a igbt catalog FUJI
Text: 1MBH20D-060 Molded IGBT 600V / 20A Molded Package Features ・Small molded package ・Low power loss ・Soft switching with low switching surge and noise ・High reliability, high ruggedness RBSOA, SCSOA etc. ・Comprehensive line-up Applications ・Inverter for Motor drive
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1MBH20D-060
Ic110
DC Motor control IGBT FUJI ELECTRIC
1MBH20D-060
fuji electric
fuji igbt
fuji servo drive
fuji igbt 300v 20a
igbt 600v 20a
igbt catalog FUJI
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MB08D-120
Abstract: No abstract text available
Text: Fuji New Semiconductor Products 1200V/8A — H 4# ^ 1MB08-120, 1MB08D-120 J U K J f c l G B T Features 'fe w * . • V 7 y ? > ? + — '/ti& S 'fX ik •g 1 tH 1 ± , ¡ f M i t S RBSOA, SCSOA 4' if) • B .m ^ y 'O T y Z f • Small molded package • Low power loss
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OCR Scan
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200V/8A
1MB08-120,
1MB08D-120
1MB08-120
MB08D-120
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KYS 30 40 diode
Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching
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OCR Scan
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30kHz
1560A
4bflb55b
Q000S1S
IXSH20N60
IXSM20N60
KYS 30 40 diode
40n60 transistor
mos 30N60
2355Z
wiom DC
IXYS 30N60
of ic 3915
1XYS
30N60T
35N100
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MBH50
Abstract: MBH50-060 *50D060 IGBT MBH50-060 H50D060 BH50-060 1MBH50D-060 P3FB
Text: Fuji New Semiconductor Products i -r- X “t — v I ;M: • / j\ § y i — )v k £ < -? i h flÿ I 6 0 0 V /5 0 A GBT 1MBH50-060, 1MBH50D-060 Features v • f liig f c M iJ titl: RBSOA, SCSOA 4' £:') • 1 1 4 7 - 0 7 7 ^ • Small molded package • Low power loss
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OCR Scan
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1MBH50-060,
1MBH50D-060
H50-060
538B-7681
MBH50
MBH50-060
*50D060
IGBT MBH50-060
H50D060
BH50-060
1MBH50D-060
P3FB
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ixys igbt
Abstract: No abstract text available
Text: □IXYS IGBT Modules Sixpack lC25 v ces C onditions V CES Tj = 25°C to 150°C Tj = 25°C to 150°C; RGE = 20 k£i 600 600 V V V GES Continuous V GEM Transient ±20 ±30 V V ^C25 ^CSO Tc =25°C 45 A Tc = 80°C ^CM Tc = 80°C, tp = 1 ms 30 60 A A tsc SCSOA
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OCR Scan
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