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    Infineon Technologies AG AUIRGPS4067D1

    IGBT 600V 240A 750W TO-274
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    Infineon Technologies AG IRGPS4067DPBF

    IGBT TRENCH 600V 240A SUPER247
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    Rochester Electronics LLC AUIRGPS4070D0

    IGBT TRENCH 600V 240A TO274-3
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    Infineon Technologies AG IRGPS60B120KDP

    IGBT 1200V 105A 595W SUPER247
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    Infineon Technologies AG IRGPS47160DPBF

    IGBT 600V TO247 COPAK
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    IRGPS Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGPS4067DPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 240A 750W SUPER-247 Original PDF
    IRGPS40B120U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGPS40B120U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGPS40B120UD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRGPS40B120UD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGPS40B120UD International Rectifier UltraFast Co-Pack IGBT Original PDF
    IRGPS40B120UDP International Rectifier 1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package; Similar to IRGPS40B120UD with Lead Free Packaging Original PDF
    IRGPS40B120UP International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGPS40B120UPBF International Rectifier Original PDF
    IRGPS46160DPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 240A 750W SUPER247 Original PDF
    IRGPS47160DPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V TO247 COPAK Original PDF
    IRGPS60B120KD International Rectifier 1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package; A IRGPS60B120KD with Standard Packaging Original PDF
    IRGPS60B120KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGPS60B120KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGPS60B120KDP International Rectifier 1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package; Similar to IRGPS60B120KD with Lead Free Packaging Original PDF
    IRGPS60B120KDP International Rectifier Original PDF
    IRGPS66160DPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 160A TO247 Original PDF

    IRGPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGPS4067

    Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
    Text: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 


    Original     		PDF IRGPS4067DPbF IRFPS37N50A IRGPS4067 irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF

    TRANSISTOR N 1380 600 300 SC

    Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
    Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 4295A IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA TRANSISTOR N 1380 600 300 SC MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V

    420 Diode

    Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
    Text: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UD Super-247 Super-247TM 5M-1994. O-274AA 420 Diode ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD

    Untitled

    Abstract: No abstract text available
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295D IRGPS40B120U Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    mosfet 1200V 40A

    Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295D IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A

    transistor D 5032

    Abstract: 12 H 595 IRGPS60B120KD igbt 60a IGBT 900v 60a A1508 IGBT 1200V 60A Ir 900v 60a IRFPS37N50A 120A8
    Text: PD- 94239B IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94239B IRGPS60B120KD Super-247 Super-247TM IRFPS37N50A transistor D 5032 12 H 595 IRGPS60B120KD igbt 60a IGBT 900v 60a A1508 IGBT 1200V 60A Ir 900v 60a IRFPS37N50A 120A8

    Untitled

    Abstract: No abstract text available
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UDP Super-247 Super-247â IRFPS37N50A

    Untitled

    Abstract: No abstract text available
    Text: IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGPS4067DPbF Super-247 O-274AA) IRFPS37N50A IRFPS37N50A

    IRGPS40B120UD

    Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
    Text: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 4240A IRGPS40B120UD Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A IRGPS40B120UD ic MARKING QG 1000V 20A transistor

    mosfet 1200V 40A

    Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
    Text: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.


    Original     		PDF IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA mosfet 1200V 40A 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A

    IRGPS46160D

    Abstract: No abstract text available
    Text: IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C IC = 160A, TC = 100°C tSC ≥ 5 s, TJ max = 175°C E C G G VCE(on) typ. = 1.70V @ IC = 120A E Super-247 n-channel Applications • Industrial Motor Drive


    Original     		PDF IRGPS46160DPbF Super-247 AEC-Q101-001 AEC-Q101-005 IRGPS46160D

    Untitled

    Abstract: No abstract text available
    Text: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 


    Original     		PDF IRGPS4067DPbF IRFPS37N50A

    IRGPS66160DPBF

    Abstract: No abstract text available
    Text: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding


    Original     		PDF IRGPS66160DPbF IRGPS66160DPbFÂ JESD47F) IRGPS66160DPBF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 5899A IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    420 Diode

    Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UDP Super-247 Super-247TM PS37N50A IRFPS37N50A 420 Diode 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A

    IGBT 1200V 60A

    Abstract: No abstract text available
    Text: PD- 95913 IRGPS60B120KDP INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF IRGPS60B120KDP Super-247 Super-247â R37N50A IGBT 1200V 60A

    IRFPS37N50A

    Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
    Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 5899A IRGPS40B120UP Super-247 Super-247TM IRFPS37N50A IRFPS37N50A IRGPS40B120UP 312V marking code igbt 40a 600v

    ir igbt 1200V 40A

    Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
    Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package


    Original     		PDF IRGPS40B120U Super-247 20KHz Super-247TM 5M-1994. O-274AA ir igbt 1200V 40A igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package

    mosfet 600V 60A

    Abstract: IGBT 1200V 60A l200uh IGBT 60A 1200V IGBT 900v 60a 7457 ic Ir 900v 60a Super-247 Package 60a motor control IRGPS60B120KD
    Text: PROVISIONAL PD - 94239 IRGPS60B120KD Motor Control CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability


    Original     		PDF IRGPS60B120KD Super-247 Super-247TM 5M-1994. O-274AA mosfet 600V 60A IGBT 1200V 60A l200uh IGBT 60A 1200V IGBT 900v 60a 7457 ic Ir 900v 60a Super-247 Package 60a motor control IRGPS60B120KD

    transistor D 5032

    Abstract: 650 DIODE IRGPS60B120KD
    Text: PD- 94239 IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF IRGPS60B120KD Super-247 Super-247TM O-274AA transistor D 5032 650 DIODE IRGPS60B120KD

    mosfet 1200V 40A

    Abstract: MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode
    Text: PROVISIONAL PD - 94240 IRGPS40B120UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA


    Original     		PDF IRGPS40B120UD Super-247 20KHz Super-247TM 5M-1994. O-274AA mosfet 1200V 40A MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode

    mosfet 1200V 40A

    Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
    Text: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295B IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRGPS40B120U transistor 600v 500a 312V marking code l200h

    ic MARKING QG

    Abstract: IGBT 1200V 60A IGBT 60A Super-247 Package IRFPS37N50A IRGPS60B120KD transistor D 5032 247t A1508 650 DIODE
    Text: PD- 94239A IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4239A IRGPS60B120KD Super-247 Super-247TM IRFPS37N50A ic MARKING QG IGBT 1200V 60A IGBT 60A Super-247 Package IRFPS37N50A IRGPS60B120KD transistor D 5032 247t A1508 650 DIODE

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A