SFKTS63T15
Abstract: SFKTS63T20
Text: MICRO FUSION THREE PHASE SCR POWER CONTROLLERS FEATURES Auto-Ranging Input Voltage 24 - 600 VAC, 45 - 65 Hz AC Output 8, 16, 32, 50, 80 Amps @ 50°C 6000 ft Control Features Microprocessor-based controller / phase lock loop timing 4 SCR or 6 SCR configuration
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15-foot
SMAUFUSION-RDK15
25-foot
SMAUFUSION-RDK25
SFKTS63T15
SFKTS63T20
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scr C35
Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
Text: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control
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2N681-2N692
MIL-PRF-19500/108
scr C35
2N683
2N690
2N681-2N692
2N688
2n692
2N681
2N682
FREEPORT
2N684
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NTE5507
Abstract: SCR 200A 500V NTE5500 NTE5501 NTE5502 NTE5503 NTE5504 NTE5505 NTE5506 NTE5508
Text: NTE5500 thru NTE5509 Silicon Controlled Rectifier SCR 16 Amp Description: The NTE5500 thru NTE5509 series of industrial–type silicon controlled rectifiers (SCR) are available in a TO48 style package with a current handling capability to 25 Amps at junction temperatures to +125°C.
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NTE5500
NTE5509
NTE5509
NTE5500
NTE5501
NTE5502
100mA
NTE5507
SCR 200A 500V
NTE5501
NTE5502
NTE5503
NTE5504
NTE5505
NTE5506
NTE5508
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S8016N
Abstract: S2055N S4016N s8025 35 amp scr s60 S4025 S2055N equivalent S1025N S2016N S2025N
Text: D 2 Pak MT2 MT1 G 2 D Pak SCR 16 – 55 Amps 6 General Description The Teccor Electronics line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with
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SCR 200A 500V
Abstract: TO48 package NTE5504 NTE5501 Fuse 300V 2A NTE5509 scr 16 amp NTE5502 NTE5507 NTE5506
Text: NTE5500 thru NTE5509 Silicon Controlled Rectifier SCR 16 Amp, TO48 Description: The NTE5500 thru NTE5509 series of industrial−type silicon controlled rectifiers (SCR) are available in a TO48 style package with a current handling capability to 25 Amps at junction temperatures to +125°C.
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NTE5500
NTE5509
NTE5509
NTE5500
NTE5501
NTE5502
100mA
SCR 200A 500V
TO48 package
NTE5504
NTE5501
Fuse 300V 2A
scr 16 amp
NTE5502
NTE5507
NTE5506
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Untitled
Abstract: No abstract text available
Text: FS16.J INSULATED STANDARD SCR On-State Current 16 Amp INSULATED TO-220AB 1 Gate Trigger Current 2 mA to 40 mA Off-State Voltage 200 V ÷ 800 V FEATURES Glass/passivated die junctions Provides voltage insulated tab rated at 2500V RMS High current SCR
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O-220AB
2002/95/EC
2002/96/EC
J-STD-020,
O-220AB.
fs16jst
Jul-14
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RS4-1D1-A
Abstract: SCR 30A 500V RS4-1D1-B SCR VOLTAGE CONTROL SCR 265
Text: Features • • • • Current or Voltage Input Types SCR Output Zero Crossing Switching Standard 16−Lead DIP Type Package with 4 Pins RS4 Series Printed Circuit Board Mountable Solid State Relay, 1 Amp. D63 16 10 1 8 .265 6.7 Max .850 (21.6) Max .190
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16-Lead
10-35mA
5-10VDC
500VDC)
RS4-1D1-A
SCR 30A 500V
RS4-1D1-B
SCR VOLTAGE CONTROL
SCR 265
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scr 16 a
Abstract: 16TTS 16TTS16S AN-994 SMD-220
Text: 16TTS16SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A DESCRIPTION/FEATURES 2 Anode D2PAK 1 Cathode The 16TTS16SPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed RoHS*
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16TTS16SPbF
18-Jul-08
scr 16 a
16TTS
16TTS16S
AN-994
SMD-220
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16TTS
Abstract: 16TTS08S 16TTS12S AN-994 SMD-220
Text: 16TTS.SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A DESCRIPTION/FEATURES The 16TTS.SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control
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16TTS.
18-Jul-08
16TTS
16TTS08S
16TTS12S
AN-994
SMD-220
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"Silicon Controlled Rectifier"
Abstract: datasheets of scr CPS130 CS220-16M CSDD-16M SCR process
Text: PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization
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CPS130
CS220-16M
CSDD-16M
"Silicon Controlled Rectifier"
datasheets of scr
CPS130
SCR process
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Untitled
Abstract: No abstract text available
Text: J package Part num ber schem e J T 25 N 16 KNX 1 Transparent view of gate pin terminal 1.47mm 0.060 DIA. 20 2 3 4 5 6 1) Package designation 2) Thyristor designation (i.e. SCR) 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier (example: 16 x 100 = 1600)
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111mm
280mm
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Untitled
Abstract: No abstract text available
Text: PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization
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CPS130
CS220-16M
CSDD-16M
29-April
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25TTS
Abstract: 25TTS08 25TTS08S 25TTS12 25TTS12S 25TTS16 25TTS16S SMD-220 25TTS12SPB
Text: 25TTS.SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A DESCRIPTION/FEATURES Anode 2 D2PAK The 25TTS.SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and
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25TTS.
18-Jul-08
25TTS
25TTS08
25TTS08S
25TTS12
25TTS12S
25TTS16
25TTS16S
SMD-220
25TTS12SPB
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16TTS08SPBF
Abstract: 16TTS 16TTS08S 16TTS12S AN-994 SMD-220
Text: 16TTS.SPbF High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A DESCRIPTION/FEATURES 2 Anode D2PAK 1 Cathode The 16TTS.SPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for RoHS*
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16TTS.
18-Jul-08
16TTS08SPBF
16TTS
16TTS08S
16TTS12S
AN-994
SMD-220
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Untitled
Abstract: No abstract text available
Text: VS-16TTS.PbF Series, VS-16TTS.-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 16 A FEATURES 2 A • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature TO-220AB 1 2
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VS-16TTS.
JEDEC-JESD47
O-220AB
12electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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E78996 scr
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
11-Mar-11
E78996 scr
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Untitled
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-16TTS.PbF Series, VS-16TTS.-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 16 A FEATURES 2 A • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature • Material categorization:
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VS-16TTS.
JEDEC-JESD47
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 16TTS.FPPbF High Voltage Series Vishay High Power Products Phase Control SCR TO-220AB FULL-PAK, 16 A DESCRIPTION/FEATURES 2 A TO-220AB FULL-PAK The 16TTS.FPPbF High Voltage Series of silicon Available controlled rectifiers are specifically designed for
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16TTS.
O-220AB
E78996
11-Mar-11
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2N681-2N692
Abstract: 2n688 2N685 JANTX rsm ah 16 2N690 2n692 2N684 2N683 2N683 JANTX
Text: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes 1 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control
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OCR Scan
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2N681-2N692
MIL-PRF-19500/108
2N681
2N682
2N683
2N684
2N685
2N686RES)
2n688
2N685 JANTX
rsm ah 16
2N690
2n692
2N683 JANTX
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ED 05 Diode
Abstract: ed13 diode DIODE ED 16 thyristor scr 800A DIODE ED 5000 volt scr SCR Phase Control 12v DC motor speed control using scr diode ED 84 DIODE ED 11
Text: f O M E V Z B E D _ 16 ED41 20 T Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCR SCR/Diode Isolated Modules 130-160-200 Amperes
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BP107,
MAX/10
ED 05 Diode
ed13 diode
DIODE ED 16
thyristor scr 800A
DIODE ED
5000 volt scr
SCR Phase Control
12v DC motor speed control using scr
diode ED 84
DIODE ED 11
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SCR C116
Abstract: ELLS 110 C116 C116A C116D C116B C-116 C116M AT-40 C116C
Text: Reverse Blocking Triode Thyristor SCR 8ARM S Model C116 Up to 600 Volts The Cl 16 is a molded silicon plastic SCR which incorporates General Electric’s new POWER-GLAS glassivation process. This process provides for an intim ate void-free bond between the silicon chip and the glass coating significantly improving perform ance and
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O-202
SCR C116
ELLS 110
C116
C116A
C116D
C116B
C-116
C116M
AT-40
C116C
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Untitled
Abstract: No abstract text available
Text: Œ Phase Control - SCR cont'd) VD RM IT M ax Forward Current (Amps) IT RMS - All Conduction Angles IT Ave - Conduction Angle = 180° RMS 10 A 12.5 A 16 A 20 A 25 A Av. 6.2 A 8A 10 A 13 A 16 A 50 ECG5461 ECG5501 ECG5521 ECG5550 ECG5522 35 A 40 A 22 A 25 A
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OCR Scan
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ECG5461
ECG5501
ECG5521
ECG5550
ECG5522
ECG5541
ECG5462
ECG5491
ECG5502
ECG5463
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