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    SCHOTTKY DIODE DIE Search Results

    SCHOTTKY DIODE DIE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZLLS400

    Abstract: ZHCS400 ZLLS400TA ZLLS400TC Schottky Diode 40V 1A
    Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10mA DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low


    Original     		PDF ZLLS400 OD323 ZLLS400 ZHCS400 ZLLS400TA ZLLS400TC Schottky Diode 40V 1A

    ZLLS400

    Abstract: ZLLS400TA ZHCS400 ZLLS400TC
    Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low


    Original     		PDF ZLLS400 OD323 OD323 swit26100 ZLLS400 ZLLS400TA ZHCS400 ZLLS400TC

    ZLLS400

    Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
    Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low


    Original     		PDF ZLLS400 OD323 ZLLS400 IR610 ZHCS400 ZLLS400TA ZLLS400TC

    ZLLS400

    Abstract: ZHCS400 ZLLS400TA ZLLS400TC FSM12
    Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low


    Original     		PDF ZLLS400 OD323 ZLLS400 ZHCS400 ZLLS400TA ZLLS400TC FSM12

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all
    Text: HSCH-9401 GaAs Schottky Diode Data Sheet Description The HSCH-9401 is a discrete Schottky barrier diode fabricated with the Schottky Barrier Integrated Diode SBID process. Features • fC >800 GHz Applications The HSCH-9401 is a general purpose millimeter wave


    Original     		PDF HSCH-9401 HSCH-9401 5988-4416E 5988-6154EN GaAs MMIC ESD, Die Attach and Bonding Guidelines all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748

    Schottky Diode 40V 2A

    Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
    Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage


    Original     		PDF ZLLS2000 OT23-6 Schottky Diode 40V 2A marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


    Original     		PDF ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23

    ZHCS1000

    Abstract: ZLLS1000 ZLLS1000TA ZLLS1000TC
    Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low


    Original     		PDF ZLLS1000 ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC

    ZHCS2000

    Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20
    Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage


    Original     		PDF ZLLS2000 OT23-6 ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20

    ZHCS2000

    Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode
    Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage


    Original     		PDF ZLLS2000 OT23-6 ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode

    L05 diode

    Abstract: ZLLS500 MARKING L05 ZHCS500 ZLLS500TA ZLLS500TC
    Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low


    Original     		PDF ZLLS500 ZLLS500 L05 diode MARKING L05 ZHCS500 ZLLS500TA ZLLS500TC

    L05 diode

    Abstract: ZLLS500 ZHCS500 ZLLS500TA ZLLS500TC 8-NP
    Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low


    Original     		PDF ZLLS500 ZLLS500 L05 diode ZHCS500 ZLLS500TA ZLLS500TC 8-NP

    Diode 20A/30v

    Abstract: SCHOTTKY 20A 40V Schottky Diode 40V 5A ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC IR-1120
    Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low


    Original     		PDF ZLLS1000 Diode 20A/30v SCHOTTKY 20A 40V Schottky Diode 40V 5A ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC IR-1120

    TS16949

    Abstract: ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC schottky diode high voltage
    Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage


    Original     		PDF ZLLS2000 OT23-6 Schot6100 TS16949 ZHCS2000 ZLLS2000 ZLLS2000TA ZLLS2000TC schottky diode high voltage

    L05 diode

    Abstract: ZHCS500 ZLLS500 ZLLS500TA ZLLS500TC
    Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low forward


    Original     		PDF ZLLS500 ZLLS500 L05 diode ZHCS500 ZLLS500TA ZLLS500TC

    sk0032

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032 Type：SB120T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0032 TypeSB120T size32mils 32mils0 thickness12 038mm area24 padAnode28mils 28mils0 sk0032

    Schottky Diode 40V 5A

    Abstract: sk-0068a
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0068A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0068A Type：SB540 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0068A TypeSB540 size68mils 68mils1 thickness12 038mm area55mils 55mils1 padAnode62 Schottky Diode 40V 5A sk-0068a

    Schottky Diode 40V 2A

    Abstract: "Schottky Diode"
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0045A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0045A Type：SB240 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0045A TypeSB240 size45mils 45mils1 thickness12 038mm area36 padAnode40 characteristicsTa25 Schottky Diode 40V 2A "Schottky Diode"

    SK-0028A

    Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0028A Type1N5819 size28mils 28mils0 thickness12 038mm area20 padAnode24mils 24mils0 SK-0028A Schottky diode Die IR SK-002 1n5819 die schottky diode

    "Schottky Diode"

    Abstract: 1N5822 data sheet
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0055A Type1N5822 size55mils 55mils1 thickness12 038mm area44 padAnode48 characteristicsTa25 "Schottky Diode" 1N5822 data sheet

    schottky diode

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0060A TypeSB340 size60mils 60mils1 thickness12 038mm area48mils 48mils1 padAnode54 schottky diode

    Untitled

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032A Type：SB140T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag


    Original     		PDF SK-0032A TypeSB140T size32mils 32mils0 thickness12 038mm area24 padAnode28mils 28mils0

    12 VOLT 2 AMP smps circuit

    Abstract: circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v
    Text: Selection Guide of SiC Schottky Diode in CCM PFC Applications - August 2006 Selection Guide of SiC Schottky Diode in CCM PFC Applications Silicon Carbide Schottky diodes are ideal devices for CCM PFC boost diode applications because of the superior reverse recovery characteristics – zero reverse recovery current. Selection of


    Original     		PDF CPWR-AN05, 12 VOLT 2 AMP smps circuit circuit for 12 VOLT 6 AMP smps mathcad forward converter design mathcad MOSFET and parallel Schottky diode 12 VOLT 10 AMP smps mathcad pfc Cree SiC diode die mathcad INDUCTOR DESIGN diode schottky 600v