E3p1
Abstract: No abstract text available
Text: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die
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NTMSD3P102R2
NTMD3P102R2/D
E3p1
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e3p1
Abstract: NTMSD3P102R2SG MC 1200 Motor Control Board NTMSD3P102R2 NTMSD3P102R2G
Text: NTMSD3P102R2 FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package Features •ăHigh Efficiency Components in a Single SO-8 Package •ăHigh Density Power MOSFET with Low RDS on , Schottky Diode with Low VF •ăIndependent Pin-Outs for MOSFET and Schottky Die
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NTMSD3P102R2
NTMD3P102R2/D
e3p1
NTMSD3P102R2SG
MC 1200 Motor Control Board
NTMSD3P102R2
NTMSD3P102R2G
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74F1056
Abstract: 74F1056SC M16A 8-bit schottky diode
Text: Revised August 1999 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed
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74F1056
74F1056
74F1056SC
16-Lead
MS-012,
74F1056SC
M16A
8-bit schottky diode
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Untitled
Abstract: No abstract text available
Text: BAT54XY Schottky barrier quadruple diode Rev. 3 — 8 October 2012 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a very small
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BAT54XY
OT363
SC-88)
AEC-Q101
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74F1056
Abstract: 74F1056SC C1995 M16A b50 diode
Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching
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74F1056
F1056
74F1056SC
16-Lead
74F1056
74F1056SC
C1995
M16A
b50 diode
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74F1056
Abstract: M16A 74F1056SC
Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching
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74F1056
F1056
74F1056SC
16-Lead
74F1056
M16A
74F1056SC
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Untitled
Abstract: No abstract text available
Text: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO-8 Package Features • High Efficiency Components in a Single SO-8 Package • High Density Power MOSFET with Low RDS on , • • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive
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NTMSD2P102LR2
NTMSD2P102R2/D
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Untitled
Abstract: No abstract text available
Text: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass
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BAS86
OD80C
771-BAS86-T/R
BAS86
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Untitled
Abstract: No abstract text available
Text: TO -2 20A B NXPS20H100C Dual power Schottky diode Rev. 2 — 8 June 2012 Product data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 TO-220AB plastic package.
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NXPS20H100C
O-220AB)
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Untitled
Abstract: No abstract text available
Text: TO -2 20A B NXPS20H100C Dual power Schottky diode Rev. 2 — 8 June 2012 Product data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 TO-220AB plastic package.
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NXPS20H100C
O-220AB)
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BAS86
Abstract: No abstract text available
Text: BAS86 Schottky barrier diode Rev. 4 — 8 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring against static discharges. This surface-mounted device is encapsulated in a small hermetically sealed SOD80C glass
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BAS86
OD80C
BAS86
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BAT54J115
Abstract: bat54j MARKING CODE AP
Text: BAT54J Schottky barrier single diode Rev. 01 — 8 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323F SC-90 very small and flat lead Surface-Mounted Device
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BAT54J
OD323F
SC-90)
BAT54J
771-BAT54J115
BAT54J115
MARKING CODE AP
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Untitled
Abstract: No abstract text available
Text: TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain ID (A) 55 @ VGS = 10V 65 @ VGS = 4.5V 30 4 2 SCHOTTKY PRODUCT SUMMARY
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TSM414K34
TSM414K34CS
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BAT54J
Abstract: No abstract text available
Text: BAT54J Schottky barrier single diode Rev. 01 — 8 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323F SC-90 very small and flat lead Surface-Mounted Device
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BAT54J
OD323F
SC-90)
BAT54J
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1206 land pattern
Abstract: No abstract text available
Text: MIC2290 Micrel MIC2290 2mm x 2mm PWM Boost Regulator wtih Internal Schottky Diode General Description Features The MIC2290 is a 1.2MHz , PWM, boost-switching regulator housed in the small size 2mm × 2mm MLF -8 package. The MIC2290 features an internal Schottky diode that reduces
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MIC2290
MIC2290
M9999-022404
1206 land pattern
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marking code jk
Abstract: No abstract text available
Text: SO D3 23F BAT46WJ Single Schottky barrier diode Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F SC-90 Surface-Mounted
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BAT46WJ
OD323F
SC-90)
AEC-Q101
marking code jk
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BAT46WJ
Abstract: marking code jk BAT46WJ,115 single schottky
Text: SO D3 23F BAT46WJ Single Schottky barrier diode Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F SC-90 Surface-Mounted
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BAT46WJ
OD323F
SC-90)
AEC-Q101
771-BAT46WJ115
BAT46WJ
marking code jk
BAT46WJ,115
single schottky
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static characteristics of mosfet
Abstract: MOSFET dynamic parameters 5V GATE TO SOURCE VOLTAGE MOSFET mosfet with schottky body diode power mosfet 500 A POWER MOSFET Rise Time 1 ns schottky diode 100A 10A Schottky all mosfet equivalent book ut4810d-s08-r
Text: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:
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UT4810D
UT4810D
UT4810DL
UT4810DG
UT4810D-S08-R
UT4810D-S08-T
UT4810DL-S08-R
UT4810DL-S08-T
QW-R502-252
static characteristics of mosfet
MOSFET dynamic parameters
5V GATE TO SOURCE VOLTAGE MOSFET
mosfet with schottky body diode
power mosfet 500 A
POWER MOSFET Rise Time 1 ns
schottky diode 100A
10A Schottky
all mosfet equivalent book
ut4810d-s08-r
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:
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UT4810D
UT4810D
UT4810DG-S08-R
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DSA120X150LB
Abstract: No abstract text available
Text: DSA 120X150LB Schottky Diode Gen2 VRRM = 150 V IDAV = 2x 75 A VF = 0.80 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 n.c. 6 D1 A1 9 5 7 8 7 4 1 3 2 8 = n/c 3 D2 2 9 1 Iso la to ted he su at rfa sin ce k 4 6 5 K2 K1 E72873 Features
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120X150LB
E72873
20120424d
DSA120X150LB
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Untitled
Abstract: No abstract text available
Text: DSA 120X150LB Schottky Diode Gen2 VRRM = 150 V IDAV = 2x 75 A VF = 0.80 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 n.c. 6 D1 A1 9 5 7 8 7 4 1 3 2 8 = n/c 3 D2 9 2 1 Iso la to ted he su at rfa sin ce k 4 6 5 K2 K1 E72873 Features
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120X150LB
E72873
20120424d
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Untitled
Abstract: No abstract text available
Text: DSA 120X150LB Schottky Diode Gen2 VRRM = 150 V IDAV = 2x 75 A VF = 0.80 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel Legs A2 n.c. 6 D1 A1 9 5 7 8 7 4 1 3 2 8 = n/c 3 D2 2 9 1 Iso la to ted he su at rfa sin ce k 4 6 5 K2 K1 E72873 Features
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120X150LB
E72873
20120119c
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Untitled
Abstract: No abstract text available
Text: 1056 tß National Semiconductor 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress
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74F1056
F1056
74F1056SC
16-Lead
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Untitled
Abstract: No abstract text available
Text: „ . Revised A ugust 1999 s e m ic o n d u c to r 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky b arrier diode array designed to be em ployed as term ination on the inputs to m em ory bus lines or C LO C K lines. This device is designed
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74F1056
74F1056
74F1056SC
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