s31 schottky diode
Abstract: SOD323 Package footprint marking A SOD323 diode SOD-323 BL GALAXY diode SOD-323 1SS357 SOD-323 sod323 MARKING TA SOD323 DIODE DIODE SCHOTTKY SOD-323 schottky 1ss357
Text: BL Galaxy Electrical Production specification Surface mounting schottky Diode 1SS357 FEATURES z Pb Small Surface Mounting Type: Lead-free SOD-323 z Low VF。 z Low IR APPLICATIONS z Surface mount schottky diode SOD-323 ORDERING INFORMATION Type No. Marking
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1SS357
OD-323
BL/SSSKB004
s31 schottky diode
SOD323 Package footprint
marking A SOD323
diode SOD-323 BL GALAXY
diode SOD-323
1SS357 SOD-323
sod323
MARKING TA SOD323 DIODE
DIODE SCHOTTKY SOD-323
schottky 1ss357
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schottky 1ss357
Abstract: 1SS357
Text: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS Mechanical Data:
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1SS357
OD-323
MIL-STD-202
OD-323
13-Sep-05
12-Sep-05
schottky 1ss357
1SS357
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free download IR circuit diagram
Abstract: s31 schottky diode schottky 1ss357 1SS357
Text: 1SS357 Surface Mount Schottky Barrier Diode SCHOTTKY BARRIER P b Lead Pb -Free 100m AMPERES Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package 40 VOLTS 1 Mechanical Data:
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1SS357
OD-323
MIL-STD-202
OD-323
13-Sep-05
12-Sep-05
free download IR circuit diagram
s31 schottky diode
schottky 1ss357
1SS357
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schottky 1ss357
Abstract: sod323 marking NO s31 schottky diode
Text: 1SS357 Surface Mounting Schottky Diode SOD-323 Features Small Surface Mounting Type: SOD-323 Low VF。 Low IR Applications Surface mount schottky diode Dimensions in inches and millimeters Ordering Information Type No. Marking 1SS357 S31 MAXIMUM RATING @ Ta=25℃
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1SS357
OD-323
OD-323
1SS357
100mA
schottky 1ss357
sod323 marking NO
s31 schottky diode
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s31 schottky diode
Abstract: 1SS357
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes FEATURES z z Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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OD-323
1SS357
100mA
s31 schottky diode
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
1SS357
OD-323
100mA
ISS357
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 + FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
1SS357
OD-323
100mA
ISS357
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Untitled
Abstract: No abstract text available
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic
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1SS357
SC-70
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1E1A
Abstract: 1SS357
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic
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1SS357
SC-70
1E1A
1SS357
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Untitled
Abstract: No abstract text available
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)
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1SS357
SC-70
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1SS357
Abstract: No abstract text available
Text: 1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.004 grams .071 1.80 .063(1.60) .006(.15)
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1SS357
OD-323
MIL-STD-202E
1SS357
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Untitled
Abstract: No abstract text available
Text: 1SS357 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Turn-On Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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1SS357
OD-323
OD-323,
MIL-STD-202,
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1SS357
Abstract: schottky 1ss357
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)
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1SS357
SC-70
1SS357
schottky 1ss357
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Untitled
Abstract: No abstract text available
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic
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1SS357
SC-70
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1SS357
Abstract: s31 schottky diode
Text: 1SS357 SCHOTTKY DIODES SOD-323 FEATURES 1.35 0.053 1.26(.050) 1.15(0.045) 1.24(.048) 2.70(0.106) 2.70(0.106) 1.80(0.071) 2.30(0.091) 2.30(0.091) 1.60(0.063) Small package Low VF, low IR 1.80(0.071) 1.60(0.063) MECHANICAL DATA .177(.007) .089(.003) 0.4(0.016)
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1SS357
OD-323
MIL-STD-750,
100mA
1SS357
s31 schottky diode
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1SS357
Abstract: No abstract text available
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)
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1SS357
SC-70
1SS357
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1SS357
Abstract: No abstract text available
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic
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1SS357
SC-70
1SS357
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Untitled
Abstract: No abstract text available
Text: 1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit in mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C)
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1SS357
SC-70
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LT 543 common cathode
Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current
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2010/9SCE0004K
TPC6K01
HMG01
CRG02
CRG07
CRG03
CRG09
CMG05
CMG07
CMG02
LT 543 common cathode
CMG03
CMG07
HEDS 5300
toshiba semiconductor catalog
DF3S6.8ECT
DF2S5.6SC
DSR520CT
1SV283B
2fu smd transistor
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CMG03
Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A
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SCE0004I
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
CMG03
1SS391
2fu smd transistor
DF2S6.8S
CMG07
TOSHIBA DIODE CATALOG
DSR520CT
toshiba SEMICONDUCTOR GENERAL CATALOG
CMF05
CRS01
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1SS357
Abstract: No abstract text available
Text: TOSHIBA 1SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS357 LO W VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage VF 3 = 0.54 (Typ.) • Low Resistance C urrent IR — • Small Package SC-70 (Max.) M A X IM U M RATINGS (Ta = 25°C)
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1SS357
SC-70
1SS357
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Untitled
Abstract: No abstract text available
Text: 1SS357 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • Low Forward Voltage Low Resistance Current Small Package VF 3 =0.54 (Typ.) I r = 5,uA (Max.) SC-70 MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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1SS357
SC-70
20X20mm,
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1SS357
Abstract: No abstract text available
Text: 1SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING, Low Forward Voltage Low Resistance C urrent Sm all Package V f 3 = 0.54 (Typ.) I r = 5^A (Max.) SC-70 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC M aximum (Peak) Reverse Voltage
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1SS357
SC-70
100mA
1SS357
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SS357
Abstract: diode marking NZ
Text: TOSHIBA 1SS357 TOSHIBA DIODE 1 SS357 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Low Resistance Current Small Package VF 3 = 0.54 (Typ.) Ir = £>/“A (Max.) SC-70 il 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)
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1SS357
SS357
SC-70
SS357
diode marking NZ
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