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    SCHEMATIC SYMBOL FOR N CHANNEL FET Search Results

    SCHEMATIC SYMBOL FOR N CHANNEL FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SCHEMATIC SYMBOL FOR N CHANNEL FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SWD-109/119 Single/Quad Drivers for GaAs FET Switches and Attenuators Features SO-8 SWD-109 n High Speed CMOS Technology n Single Channel (SWD-109) n Quad Channel (SWD-119) n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package


    Original     		PDF SWD-109/119 SWD-109) SWD-119) SWD-109 SWD-109TR SWD-109RTR SWD-119

    SWD-109

    Abstract: SWD-119 SWD-109RTR SWD-109TR SWD-119RTR SWD-119TR SWD-109-PIN Quad N CHannel Fet
    Text: SWD-109/119 Single/Quad Drivers for GaAs FET Switches and Attenuators Features SO-8 SWD-109 n High Speed CMOS Technology n Single Channel (SWD-109) n Quad Channel (SWD-119) n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package


    Original     		PDF SWD-109/119 SWD-109) SWD-119) SWD-109 SWD-119 SWD-109TR SWD-119TR SWD-109RTR SWD-109TR SWD-119RTR SWD-119TR SWD-109-PIN Quad N CHannel Fet

    transistor 7350 A

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
    Text: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E AGR19060XU AGR19060EF AGR19060XE 12-digit transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor 7350

    transistor 7350

    Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
    Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-078RFPP DS01-216RFPP) transistor 7350 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor z14 L

    2SK3264-01MR equivalent

    Abstract: 2SK3264-01MR 2SK3264 2sk3264-01
    Text: 2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK3264-01MR O-220F15 100ms 2SK3264-01MR equivalent 2SK3264-01MR 2SK3264 2sk3264-01

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    Untitled

    Abstract: No abstract text available
    Text: Quad Driver for GaAs FET Switches and Attenuators SWD-119 V 5.00 Features SO-16 n High Speed CMOS Technology n Quad Channel n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package Description The SWD-119 is a quad channel driver used to translate


    Original     		PDF SWD-119 SO-16 SWD-119 SWD-119TR

    2SK3339-01

    Abstract: 230mH
    Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3339-01 2SK3339-01 230mH

    2SK3340-01

    Abstract: No abstract text available
    Text: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3340-01 2SK3340-01

    2SK2642

    Abstract: 2SK2642-01MR c40400
    Text: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters


    Original     		PDF 2SK2642-01MR O-220F15 100ms 2SK2642 2SK2642-01MR c40400

    2SK3338-01

    Abstract: L356
    Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3338-01 2SK3338-01 L356

    2SK3341-01 equivalent

    Abstract: 2SK3341-01 2sk3341
    Text: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3341-01 2SK3341-01 equivalent 2SK3341-01 2sk3341

    2SK3337

    Abstract: 2SK3337-01 mosfet 600V 7A N-CHANNEL L173
    Text: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3337-01 2SK3337 2SK3337-01 mosfet 600V 7A N-CHANNEL L173

    AGR19180EF

    Abstract: JESD22-A114 Z111A
    Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF JESD22-A114 Z111A

    Transistor J182

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19060E Hz--1990 AGR19060EU AGR19060EF DS01-216RFPP Transistor J182

    VIM-332

    Abstract: 200B103MW 50X 200B103MW
    Text: PTF 102088 LDMOS RF Power Field Effect Transistor 45 Watts, 2110–2170 MHz Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates with 47% efficiency at P–1dB and has a


    Original     		PDF 1522-PTF VIM-332 200B103MW 50X 200B103MW

    J307 FET

    Abstract: AGR19180EF JESD22-A114 agere c8
    Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8

    J307 FET

    Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
    Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386

    swd-109

    Abstract: No abstract text available
    Text: a/7 A M P com pany Single/Quad Drivers for GaAs FET Switches and Attenuators SWD-109/119 V 2 .0 0 Features • • • • • • SO-8 SWD-109 High Speed CMOS Technology Single Channel (SWD-109) Quad Channel (SWD-119) Positive Voltage Control Low Power Dissipation


    OCR Scan     		PDF SWD-109) SWD-109/119 SWD-119) SWD-109

    swd-109

    Abstract: No abstract text available
    Text: an A M P com pany Single/Quad Drivers for GaAs FET Switches and Attenuators SWD-109/119 V 2.00 SO-8 SWD-109 Features • High Speed C M O S [Whnolo>>y PIN 8 fl R •Sing le Cluinncl (S W I)- I(W ) 1497-1574 (3 80-4.00) • Quae! Channel IS W D - 1 IV )


    OCR Scan     		PDF SWD-109/119 SWD-109) SWD-109

    E67349

    Abstract: TLP206G
    Text: TO SH IBA TLP206G TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP206G PBX Unit in mm MODEM •FAX CARD MEASUREMENT INSTRUMENT The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin SOP. The TLP206G is a 2-Form-A switch which is suitable for replacement


    OCR Scan     		PDF TLP206G TLP206G 54SOP8) UL1577, E67349 EN60065 EN60950

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP206G TENTATIVE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP206G PBX Unit in mm MODEM •FAX CARD MEASUREMENT INSTRUMENT The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin


    OCR Scan     		PDF TLP206G TLP206G 54SOP8) UL1577, E67349 EN60065 EN60950

    Untitled

    Abstract: No abstract text available
    Text: IH 5 0 0 1 /IH 5 0 0 2 1 -Channel Driver with SPST FET Switch Gate Available GENERAL DESCRIPTION FEATURES • • • Gate Lead Available fo r Nulling Charge Injection Voltage Channel C om plete—Interfaces W ith Most Integrated Logic Low O F F Power Dissipation, —1 mW


    OCR Scan     		PDF IH5002

    N and P MOSFET

    Abstract: No abstract text available
    Text: TOSHIBA TLP206G TO SHIBA PHOTOCOUPLER t i GaAs IRED & PHO TO -M O S FET P i n k r ; PBX U nit in mm M O D E M * FAX CARD M EASUREM ENT INSTRUMENT The TOSHIBA TLP206G consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a 8 pin SOP.


    OCR Scan     		PDF TLP206G TLP206G 54SOP8) N and P MOSFET