Raytheon RF Components noise amplifier
Abstract: RAYTHEON RMLA3565A-58 RO4003 LA3565 low noise amplifier 15 ghz rf in -160 db
Text: RMLA3565A-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description Features The Raytheon RMLA3565A-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or external gate bias supply. This device uses
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RMLA3565A-58
RMLA3565A-58
Raytheon RF Components noise amplifier
RAYTHEON
RO4003
LA3565
low noise amplifier 15 ghz rf in -160 db
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wt7505
Abstract: PC817 OPTOCOUPLER SHARP optocoupler PC817b wt7505c TOS8650 l5991 WT-7505C matsushita aluminium capacitors Q1 4939 TDK TRANSFORMER
Text: AN2775 Application note Forward converter for cash register applications Introduction This document introduces a reference design of a power supply for the electronic fiscal cash register EFCR demonstration board (STEVAL-IPC001V1). The power supply is based on
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AN2775
STEVAL-IPC001V1)
L5991
wt7505
PC817 OPTOCOUPLER SHARP
optocoupler PC817b
wt7505c
TOS8650
WT-7505C
matsushita aluminium capacitors
Q1 4939
TDK TRANSFORMER
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Untitled
Abstract: No abstract text available
Text: HMC407MS8G v01.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5.0 V
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HMC407MS8G
HMC407MS8G
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H407
Abstract: HMC407MS8GE 407MS8GE HMC407MS8G
Text: HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm
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HMC407MS8G
407MS8GE
HMC407MS8G
HMC407MS8GE
H407
407MS8GE
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Untitled
Abstract: No abstract text available
Text: HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features This ampliier is ideal for use as a power ampliier for 5 - 7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm
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HMC407MS8G
407MS8GE
HMC407MS8G
HMC407MS8GE
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6201A
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise
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6201B
31-Mar-06
6201A
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HMC407MS8GE
Abstract: marking gain stage GaAs MMIC AMPLIFIER HMC407MS8G schematic diagram of transistor amplifier 5v to 6 407MS8GE h407
Text: HMC407MS8G / 407MS8GE v03.1006 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm
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HMC407MS8G
407MS8GE
HMC407MS8G
HMC407MS8GE
marking gain stage GaAs MMIC AMPLIFIER
schematic diagram of transistor amplifier 5v to 6
407MS8GE
h407
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6201A
Abstract: at 6201a
Text: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise
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11-Oct-05
6201A
at 6201a
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schematic diagram of phone adapter
Abstract: 11DQ060 optocoupler PC817D LNK500 ELECTROLYTIC capacitor, .10uF 50V ac power adapter for phone schematic 4.7uf 400V transformer specification single line diagram #26tiw Electrolytic capacitor 47uf 400V
Text: Design Example Report Title 1.5W power supply using LNK500P Specification Input: 85 – 264VAC Output: 5.0V / 300mA Application Adapter Author Power Integrations Applications Department Document Number DER-14 Date February 4, 2004 Revision 1.0 Summary and Features
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LNK500P
264VAC
300mA
DER-14
CISPR-22
schematic diagram of phone adapter
11DQ060
optocoupler PC817D
LNK500
ELECTROLYTIC capacitor, .10uF 50V
ac power adapter for phone schematic
4.7uf 400V
transformer specification single line diagram
#26tiw
Electrolytic capacitor 47uf 400V
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RF AMPLIFIER marking S1
Abstract: No abstract text available
Text: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900
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MRFIC0970/D
MRFIC0970
QFN-20)
MRFIC0970
QFN-20
GSM900
QFN-20
RF AMPLIFIER marking S1
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6201A
Abstract: at 6201a 6201c AT73C239 LD01
Text: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise
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6201C
31-Jul-07
6201A
at 6201a
AT73C239
LD01
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feme relais
Abstract: Rapa relay 12vdc Rapa Relais gruner RELAY 275 gruner RELAY haller Relays SDS Relais ZETTLER AZ haller relais feme relay
Text: Relay Coupler 58 Relay Coupler Contact material Properties Application Fine silver AG 99 % - inexpensive - average tendency to weld and average resistance to burn-off - subject to corrosion in sulphurous atmosphere - high mechanical stability - low tendency to weld
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise
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6201Câ
31-Jul-07
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STV9556
Abstract: 51c33 FDH400 TDA9207 History of CRT Monitor circuit diagram
Text: STV9556 7.5 ns triple-channel high voltage video amplifier Features • Triple-channel video amplifier ■ Supply voltage up to 115 V ■ 80 V output dynamic range ■ Perfect for pictureboost application requiring high video amplitude ■ Pinning for easy PCB layout
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STV9556
STV921x
STV9556
51c33
FDH400
TDA9207
History of CRT Monitor circuit diagram
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Untitled
Abstract: No abstract text available
Text: HMC-C036 v04.0310 WIDEBAND POWER AMPLIFIER MODULE, 0.01 - 15 GHz AMPLIFIERS 1 Features Gain: 12 dB P1dB Output Power: +28 dBm Regulated Supply and Bias Sequencing Hermetically Sealed Module Typical Applications Field Replaceable SMA connectors 0 °C to +85 °C Operating Temperature
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HMC-C036
HMC-C036
C-10B
231CCSF
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HMC-C036
Abstract: No abstract text available
Text: HMC-C036 v02.1007 WIDEBAND POWER AMPLIFIER MODULE, 0.01 - 15 GHz CONNECTORIZED MODULES - AMPLIFIERS 9 Features Gain: 12 dB P1dB Output Power: +28 dBm Regulated Supply and Bias Sequencing Hermetically Sealed Module ypical Applications Typical Field Replaceable SMA connectors
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HMC-C036
HMC-C036
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ps4 schematic
Abstract: HMC392 PS3 flat power supply
Text: HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC392 is ideal for use as a low noise amplifier for: Gain: 15.5 dB • Point to Point Radios Single Supply Voltage: +5.0V
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HMC392
HMC392
025mm
ps4 schematic
PS3 flat power supply
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LM94022
Abstract: LM95022 CSI-3-038
Text: LM94022 Evaluation Board User’s Guide Copyright 2004 National Semiconductor Corporation 1 www.national.com LM94022 Evaluation Board User’s Guide Revision A June 16, 2005 LM94022 Evaluation Board User’s Guide Table of Contents Table of Contents 2 References
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LM94022
LM95022
CSI-3-038
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S2-24V
Abstract: RAYTHEON Raytheon RF Components noise amplifier RMLA3565-58 RO4003 rf 58 s113v la3565
Text: RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description Features The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no
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RMLA3565-58
RMLA3565-58
S2-24V
RAYTHEON
Raytheon RF Components noise amplifier
RO4003
rf 58
s113v
la3565
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DC 0509
Abstract: HMC-C037
Text: HMC-C037 v03.0509 WIDEBAND POWER AMPLIFIER BENCHTOP MODULE, 0.01 - 15 GHz 1 Features AMPLIFIERS Gain: 12 dB P1dB Output Power: +28 dBm Eliminates Band Switching Excellent Gain Flatness Regulated Supply and Bias Sequencing Typical Applications Hermetically Sealed Module
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HMC-C037
HMC-C037
MIL-C-5541
DC 0509
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Untitled
Abstract: No abstract text available
Text: HMC-C037 v03.0509 WIDEBAND POWER AMPLIFIER BENCHTOP MODULE, 0.01 - 15 GHz 1 Features AMPLIFIERS Gain: 12 dB P1dB Output Power: +28 dBm Eliminates Band Switching Excellent Gain Flatness Regulated Supply and Bias Sequencing Typical Applications Hermetically Sealed Module
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HMC-C037
HMC-C037
MIL-C-5541
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3055 7F
Abstract: j325 129CD
Text: AT&T i Data Sheet 129CD Quintuple Static Shift Register Features Vcc • Five 32-bit static shift registers ' 20 kß ■ 5.0 ± 0.5 V power supply: 250 mW max ■ TTL-com patible input/output ■ Single-phase clock, positive-edge triggered INPUT AND CLOCK PINS '
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129CD
32-bit
24-pin
RS42898
J32562
DS87-317DBIP
3055 7F
j325
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DS-873
Abstract: No abstract text available
Text: AT&T Data Sheet 129CD Q uintuple S tatic Shift R egister vcc Features • Five 32-bit static shift registers • 20 kfi ■ 5.0 ± 0.5 V power supply: 250 mW max ■ TTL-compatible input/output ■ Single-phase clock, positive-edge triggered INPUT AND CLOCK PINS '
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129CD
32-bit
24-pin
RS42898
J32562
DS87-317DBIP
DS-873
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8823* toshiba
Abstract: TL5564
Text: Integrated C ircuits Incorporated 10301 W illows Road IK ill = a * C M O S 32X 8-01 — 256K32 768W S0TRDT,X C8RB,T integrated circuits incorporated FEATURES: • Very low power dissipation ■ Single 5V power supply ■ Data retention to 2.0V VDC ■ Fully static operation
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256K32
32X8-01
8823* toshiba
TL5564
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