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    ISOWATT221

    Abstract: stp5n80xi
    Text: SCS-THOMSON STP5N80XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N 80XI ' Voss RDS on Id 800 V 2 .4 i l 2 .6 A . . . . . . AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALAN C H E TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT C APAC ITANC E


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    STP5N80XI ATT221 SC05970 ISOWATT221 stp5n80xi PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH6N100 S T H 6 N 10 0F I V dss R D S on Id 1 00 0 V 100 0 V 2 LI 2 a 6 A 3 .7 A . > . • ■ . AVALANCHE RUG G EDN ESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    STH6N100 STH6N100FI T0-218 ISOWATT218 STH6N100/Fl SC05970 PDF

    80n05

    Abstract: STH80N05 CCIC STHV82FI
    Text: SGS-THOMSON iGJOT «! STH80N05 STH80N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vpss RDS on Id a a \ C MC MI o o j 50 V 50 V IÒ Ö I STH 80N05 STH80N05FI 80 A 52 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    STH80N05 STH80N05FI 80N05 STH80N05FI 80N05 STHV82/FI SC05970 CCIC STHV82FI PDF