ISOWATT221
Abstract: stp5n80xi
Text: SCS-THOMSON STP5N80XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N 80XI ' Voss RDS on Id 800 V 2 .4 i l 2 .6 A . . . . . . AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALAN C H E TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT C APAC ITANC E
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OCR Scan
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STP5N80XI
ATT221
SC05970
ISOWATT221
stp5n80xi
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH6N100 S T H 6 N 10 0F I V dss R D S on Id 1 00 0 V 100 0 V 2 LI 2 a 6 A 3 .7 A . > . • ■ . AVALANCHE RUG G EDN ESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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STH6N100
STH6N100FI
T0-218
ISOWATT218
STH6N100/Fl
SC05970
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80n05
Abstract: STH80N05 CCIC STHV82FI
Text: SGS-THOMSON iGJOT «! STH80N05 STH80N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vpss RDS on Id a a \ C MC MI o o j 50 V 50 V IÒ Ö I STH 80N05 STH80N05FI 80 A 52 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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STH80N05
STH80N05FI
80N05
STH80N05FI
80N05
STHV82/FI
SC05970
CCIC
STHV82FI
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