sc 3228
Abstract: NB-DIO-96 SC-2050 SC-2062 PCI-1200 PCI-DIO-96 NB-DIO-32F SC-2055 P32-35 R1005050
Text: Cable Adapters for Signal Conditioning SC-205X Series DAQ Products SC-2050 SC-2051 MIO Series DIO-24 AI Series AT-MIO-16DE-10 SC-2052 SC-2053 SC-2054 SC-2055 DIO-32F Lab Series PCI-1200 DAQPad-1200 DAQCard-1200 PC-AO-2DC SCXI-1200 PCI-DIO-96 PC-DIO-96 NB-DIO-96
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SC-205X
SC-2050
SC-2051
SC-2052
DIO-24
AT-MIO-16DE-10
SC-2053
SC-2054
SC-2055
DIO-32F
sc 3228
NB-DIO-96
SC-2050
SC-2062
PCI-1200
PCI-DIO-96
NB-DIO-32F
SC-2055
P32-35
R1005050
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sc 3228
Abstract: PR68-68F SC-2040 182482-01
Text: Simultaneously Sampling Differential Amplifier SC-2040 Features 8 channels Instrumentation amplifier Track-and-hold circuitry Negligible time skew between sampled channels Gains of 1, 10, 100, 200, and 500 per channel Used with E Series DAQ boards Overvoltage protection to ±30 V
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SC-2040
SC-2040
68-pin
50-pin
sc 3228
PR68-68F
182482-01
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DA 3807
Abstract: 4953 DA 3807 transistor dc dc converter 4953 an 4953 circuit diagram of speech recognition 4541 timer 4836 sc 3228 MS-022
Text: SC-614 Speech And Music Processor Data sheet Features Advanced, integrated speech synthesizer for high-quality sound. Operates up to 12.32 MHz performs up to 12 MIPS . Single-chip solution for up to 6.8 minutes of speech. External ROM interface for up to 18.8 hours of
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SC-614
640-word
DA 3807
4953
DA 3807 transistor
dc dc converter 4953
an 4953
circuit diagram of speech recognition
4541 timer
4836
sc 3228
MS-022
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Untitled
Abstract: No abstract text available
Text: Revision 16 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)
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TM1019
MIL-STD-883B
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RTAX250
Abstract: RTAX4000DL RTAX4000D CG624 RTAX4000S LG1152 TRANSISTOR TB 772 SL RTAX2000S ACTEL CCGA 624 mechanical transistor prc 606 j
Text: Revision 15 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)
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TM1019
RTAX250
RTAX4000DL
RTAX4000D
CG624
RTAX4000S
LG1152
TRANSISTOR TB 772 SL
RTAX2000S
ACTEL CCGA 624 mechanical
transistor prc 606 j
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w32 smd transistor
Abstract: rtax250sl RTAX2000S w32 smd transistor 143 41-bit Carry Look-ahead Adder RTAX2000SL RTAX4000S BY415 RTAX4000D LG1152
Text: Revision 14 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)
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TM1019
MIL-STD-883B
w32 smd transistor
rtax250sl
RTAX2000S
w32 smd transistor 143
41-bit Carry Look-ahead Adder
RTAX2000SL
RTAX4000S
BY415
RTAX4000D
LG1152
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RTAX2000D
Abstract: LG1152 CDB 455 C34
Text: Revision 14 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)
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TM1019
RTAX2000D
LG1152
CDB 455 C34
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624 CCGA
Abstract: CQ352 transistor prc 606 j rtax250 RTAX2000 rtax4000
Text: Revision 14 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)
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TM1019
624 CCGA
CQ352
transistor prc 606 j
rtax250
RTAX2000
rtax4000
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fuse smd code ud
Abstract: kc-1206 EB smd code marking tantalum capacitor cf750 2824 footprint dimension JK-110 CAP SMD 2.2uF 50V 10 CERAMIC X7R 0603 TANTALUM smd capacitor 685 35K 1808 footprint IPC Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
Text: Surface Mount Multilayer Ceramic Chip Capacitors Commercial Grade Surface Mount Multilayer Ceramic Chip Capacitors One world. One KEMET. Surface Mount Multilayer Ceramic Chip Capacitors Commercial Grade Table of Contents Page Why Choose KEMET. 4
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15bis
fuse smd code ud
kc-1206
EB smd code marking tantalum capacitor
cf750
2824 footprint dimension
JK-110
CAP SMD 2.2uF 50V 10 CERAMIC X7R 0603
TANTALUM smd capacitor 685 35K
1808 footprint IPC
Commercial "L", SnPb Termination, X7R Dielectric, 6.3 – 250 VDC (Commercial Grade)
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RCA scr package N TO-8
Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
Text: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228
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75AdPMl
S2400A
S3704A
S3714A
2N3528
S2400B
2N3228
S3700B
S3704B
S2710B
RCA scr package N TO-8
rca 2N4102
IGNITION WITH SCR
rca scr
SCR 100A
scr 2n6396
S20620
2N4102
ignition tci
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mr5060
Abstract: MR5061 IC MR5060 sc 3228 MR5060 ic
Text: motorola sc -C DI ODE S/ OPT OJ 1 2E D I b3b?ESS 007T?53 3 | _ „ T-o\-\e MOTOROLA MR5060 MR5061 SEMICONDUCTOR TECHNICAL DATA AVALANCHE RECTIFIERS LEAD-MOUNTED AVALANCHE RECTIFIERS . . . subm iniature size, axial lead-m ounted rectifiers for generalpurpose, low-pow er applications requiring avalanche protection.
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MR5060
MR5061
MR5061
IC MR5060
sc 3228
MR5060 ic
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55n10
Abstract: transistor 60n06 60N06 MTM60N06 MTM60N05 MTM55N08 sc 3228 MTM55N10 of 60N06 S0020
Text: MOTOROLA SC XSTRS/R bflE T> m F b3b7ES4 D O T flb n 0 7 e! • MOTOROLA ■I SEMICONDUCTOR MTM55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a Sheet 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
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b3b72S4
MTM55N10
MTM60N06
VI55N
55n10
transistor 60n06
60N06
MTM60N06
MTM60N05
MTM55N08
sc 3228
of 60N06
S0020
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transistor c 3228
Abstract: 2n6546 motorola 2N6546 TD-204AA td204aa
Text: m o to r o l a sc xstrs/ r 12E D I f t 3 b7 5 S 4 0Gô4b70 T | - MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 15 AMPERE NPN SILICON POWER TRANSISTORS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 W ATTS
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sc 3228
Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Text: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X
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2SC3186
2SC3187
2SC3189
2SC3190
2SC3191
2SC3192
2SC3193
2SC3194
2SD1085
2SC3468
sc 3228
C3468
2SD2159
2SC 3205
2SD880
2SC3296
2sc3192
2SC2320
c2981
2SD1812
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MCR1906-6
Abstract: MCR1906-8 sc 3228 MCR1906-4 MCR1906
Text: MO TO R O L A SC C D I O D E S / O P T O L,4E D P m " b3b72SS QGflbl23 ITT BinOT? M CR1906 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors T h e se d e v ic e s are g la ssiv a te d p lan ar co nstru ction d e s ig n e d fo r ap p lic a tio n s in
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QGflbl23
MCR1906
O-205AD)
MCR1906-6
MCR1906-8
sc 3228
MCR1906-4
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Saronix xtal Oscillator SG-8002DB
Abstract: No abstract text available
Text: EL4584C f f X f l H t B C HIGH PtRFORMANCE ANAlOG iNT66RA7ECCIRCUITS E L 4 5 8 4 C H n r h o n i n ! fip n fo c /c *x •/ AA*wvt MAUI tá U M W l F e a tu re s G en era l D e sc r ip tio n • 36 M H z, general purpose P L L • 4 F s c based tim in g use th e
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EL4584C
iNT66RA7ECCIRCUITS
EL4585
/EL4583
EL4584C
vid008
Saronix xtal Oscillator SG-8002DB
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SBEC1
Abstract: 0991-003 114-20004 20I57 2x03
Text: T H 1S D R A W 1 NG T 1S U N P U B L 1S H E D . COPYRIGHT RELEASED 19 BY A MP INCORPORATED. FOR P U B L 1C A T I ON ALL RIGHTS ,19 D l ST LOC RESERVED. RE V I S I ONS 40 A LTR DE SC R I P T I O N ADDED 07 WIRE S IZ E TO O L NUM BER /S\ ( OOO\ w0 1=1 Lß<ö>ö/
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29AUG2005
200336-ND
24SEP200
4SEP2002
9MAY94
SBEC1
0991-003
114-20004
20I57
2x03
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60N06
Abstract: motorola mosfet
Text: MOTOROLA SC XSTRS/R F bf l E T> b 3 b 7 ES4 DOTflbn M O TO R O LA •I SEMICONDUCTOR MTM55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 55 and 60 A M P E R E N-CHANNEL T M O S POWER FETs N - C H A N N E L E N H A N C E M E N T - M O D E S IL IC O N G A T E
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MTM55N10
MTM60N06
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
60N06
motorola mosfet
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CI 4584
Abstract: 4584 inverter cd 4584 VCXO reeves-hoffman 301-864 CMOS 4584 L4584 Reeves hoffman video genlock pll soic 8 EL4583
Text: EL4584C f f X f lH t B C HIGH PtRFORMANCE ANAlÛG iNTÊGRATECCIRCUITS E L 4 5 8 4 C H n r h o n in l! fipnfoc/c *•/x AA,wvt M A U I t á U l l l W F e a tu re s G en era l D e sc r ip tio n • 36 M H z , g en eral p u rp o se P L L T h e E L 4584C is a P L L P h a s e L o ck L oop su b sy ste m , d esig n ed
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EL4584C
EL4585
w/EL4583
Informati16
00055L1
CI 4584
4584 inverter
cd 4584
VCXO reeves-hoffman
301-864
CMOS 4584
L4584
Reeves hoffman
video genlock pll soic 8
EL4583
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Untitled
Abstract: No abstract text available
Text: DASH NO. REVISIONS GSD MADE FROM M CODE ER 31378 KH 20 DEC 89 G-J 00 cn I OJ I CN JCA 32286 A 06/20/90 CN KH 32445 A 08/21/90 CN 36450 C to KH 07/28/95 CN 36920 A DW 04/04/96 CN 39143 E JLA 08/19/04 STAMP: KINGS 1385-13-9 YRWK DATE CODE NOTES: 1. MATERIALS:
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ASTM-D-4894
ASTM-B-105
RESISTANCE-50
ASTM-B16
QQ-S-365
OU13-9
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5D0127-06
Abstract: No abstract text available
Text: DASH NO. MADE FROM M CODE GSD REVISIONS ER 31260 KH 15 NOV 89 r-o oo o r-o CN 32284 A JCA 06/21/90 I CN 32796 A JCA 01/18/91 CN 35968 C KH 01/03/95 3 / 8 -32 UNEF-2A TH‘D STAMP: KINGS 2 8 0 2 -1 -2 9 .56 HEX. NOTES: 1. FOR USE WITH Ml 7/176-00002 CABLE.
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KTH-2168.
ASTM-D-1457
IL-P-5516
ASTM-B-196
MIL-C-49142.
5D0127-06
5D0127-06
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Untitled
Abstract: No abstract text available
Text: M O S E L V TTE U C PRELIMINARY V52C8258 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 512 X 8 SAM HIGH PERFORM ANCE V 52C8258 60 70 80 Max. RAS Access Time, Irac 60 ns 70 ns 80 ns Max. CAS Access Time, (Icac) 15 ns 20 ns 25 ns Max. Column Address Access Time, (t^ )
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V52C8258
52C8258
V52C8258
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Untitled
Abstract: No abstract text available
Text: MOSEL ViTEUC V52C8258 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 512 X 8 SAM HIGH PERFORMANCE V52C8258 PRELIMINARY 60 70 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. CAS Access Time, (tcAC) 15 ns 20 ns 25 ns Max. Column Address Access Time, (tM ) 30 ns
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V52C8258
V52CB258
L353311
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Untitled
Abstract: No abstract text available
Text: 3ÖE » MICRON TECHNOLOGY INC • blllSMT GOOShTO fi ■ MRN PRELIMINARY " ■! f in t i h 1E" J J ^ - ^ - ^ i r 't r f t r :‘^ g^-^'-‘-.f-'','ni i nu'-l'ij , 1 i . ■ .■.»■* '»n.'J \ i \ "■‘•ù'f?’* * ; itìm f 'T f a ir tf ‘ ‘
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DQ02734
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