qualified
Abstract: MGD624
Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.
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PMBT3906YS
OT363
SC-88)
PMBT3906YS
OT363
SC-88
PMBT3904YS
PMBT3946YPN
AEC-Q101
qualified
MGD624
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PMBT3906YS
Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC
Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.
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PMBT3906YS
OT363
SC-88)
PMBT3906YS
SC-88
PMBT3904YS
PMBT3946YPN
AEC-Q101
TRANSISTOR SMD CODE PACKAGE SOT363
NXP SMD TRANSISTOR MARKING CODE
MARKING CODE SMD IC
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PDTB123Y
Abstract: all ic data PDTB123E PDTB113E
Text: SO T3 23 PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 13 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
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OT323
SC-70)
PDTD113EU
SC-70
PDTB113EU
PDTD113ZU
PDTB123EU
PDTD123YU
PDTB123YU
PDTB123Y
all ic data
PDTB123E
PDTB113E
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SMD TRANSISTOR MARKING A7
Abstract: PBSS8110D PBSS9110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7
Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 13 July 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
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PBSS9110D
OT457
SC-74)
PBSS8110D.
PBSS9110D
SMD TRANSISTOR MARKING A7
PBSS8110D
MOSFET TRANSISTOR SMD MARKING CODE js
TRANSISTOR SMD MARKING CODES a7
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2N6678 motorola
Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Text: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are
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T-33-13
2IM6648
2N6676
2N6677
2N6678
MJH6676
MJH6677
MJH6678
2N6676,
2N6677,
2N6678 motorola
Motorola 3-252
ca3725
Motorola Transistor 3-252
JH transistor
6676 transistor
Motorola 3-252 to-3
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PDF
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mc145412
Abstract: MC145413 145412 MC14551 Dtmfout MC145512
Text: febE D • ti3b7ES3 ODflTSDD 1 2 3 ■ M0T5 MOTOROLA ■ SEMICONDUCTOR wm motorola sc > telecom TECHNICAL DATA MC145412 M CI 45413 MC145512 Advance Information Pulse/Tone Repertory Dialer Low Power Silicon-Gate CMOS The MC145412/13 and MC145512 are silicon gate, monolithic CMOS
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OCR Scan
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MC145412/13
MC145512
18-pin
MC145413
500-Hz
18-Digit
MC145412
MC145413-MC145512
145412
MC14551
Dtmfout
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PDF
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TOSHIBA 9097250
Abstract: No abstract text available
Text: ]>e 1 =10^7250 Q01ti77H 1 TOSHIBA {DI SC RE TE /OPT O} 99D 16772 9097250 TOSHIBA <DIS C RE TE/OPTO> TOSHIBA SEMICONDUCTOR ¿/ a sh ih u DT-31-13 FIELD EFFECT TRANSISTOR Y T F 1 5 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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OCR Scan
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Q01ti77H
DT-31-13
045i2
100nA
250yA
150pC,
TOSHIBA 9097250
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PDF
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS
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OCR Scan
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DT-39-13
100nA
250uA
00A/us
TOSHIBA 1N DIODE
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PDF
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HIIA1
Abstract: No abstract text available
Text: ISOCOH COilPONENTS LTD ?SC D I 4 flflk, 5 1 0 QDOOlbfi fiTb • ISO D '7 '- V / ' - # 3 HIIA 1 OPTICALLY COUPLED ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 PACKAGE DIMENSIONS IN INCHES MM » t SiSi • ooo. I 68 Si issj i e 0-13
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PDF
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT TOP VIEW ANDDE MARK 1E Ü 16 U 3 15 3t j 14 4[ 3 13 5t 3 12 6 E 3 11 7t 310 SC 39 REV. A NOTES: PART NUMBER REV. O C P - P C T 4 2 1 6/A A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BR D R . & #10 7 7 6 . DATE 8.16.01 1.3.5.7. ANODE/CATHODE
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PCT421
decl05ure
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PDF
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mitsumi 455khz
Abstract: No abstract text available
Text: ICs for FM/AM Tuner AN7002K, AN7002S Single Chip ICs for AM Radio Unit : mm 22 21 20 19 18 17 16 15 14 13 12 M Di ain sc te on na tin nc ue e/ d 19.1±0.3 1 2 3 4 5 6 7 8 9 10 11 0.5±0.1 0.9±0.25 AN7002K The AN7002K and the AN7002S are the single chip ICs
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AN7002K,
AN7002S
AN7002K
AN7002S
AN7002K
mitsumi 455khz
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PDF
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3713FE 4.5mm 1/4 inch EIS CCD Area Image Sensor • Overview ■ Pin Assignments OD 1 16 PW øR 2 15 ø V4 RD 3 14 ø V3 VO 4 13 ø V2 M Di ain sc te on na tin nc ue e/ d The MN3713FE is a 4.5mm (1/4 inch) Interline Transfer CCD (ITCCD) solid state image sensor device.
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MN3713FE
MN3713FE
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HS069
Abstract: No abstract text available
Text: V Te x a s In s t r u m e n t s CD4504B Types Data sheet acquired from Harris S em iconductor SC HS069 1 16 — a 0U T - 2 15 — 'F 0 ut VDD - 3 b 0 U T - 4 14 — F in 13 - SELECT - 5 ’ 2 ‘— e out 6 11 — e - 7 10 — Pout
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HS069
CD4504B
20-Volt
HS069
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PDF
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2N4220 MOTOROLA
Abstract: j201 J203 2N4220
Text: M O T O R O L A SC XSTRS/R F !2E D | b3fc,72S4 Q0âb?13 1 | 1201 thru J203 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X IM U M R A T IN G S Symbol Valus U nit Drain-Source Voltage Vos 40 Vdc Drain-Gate Voltage Vdg 40 Vdc Gate-Source Voltage Vg s 40 Vdc 50 mA
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OCR Scan
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O-226AA)
2N4220
2N4220 MOTOROLA
j201
J203
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PDF
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Untitled
Abstract: No abstract text available
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN5111T1G
70/SOTâ
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
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OCR Scan
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52N6082
MRF245
PT8828
BFY70
J0303
CM-501
sd1238
2N6096
RF Transistor S10-12
2N4932
BLY94
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PDF
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MSB709
Abstract: SC-75 SOT-353 b1
Text: MSB709 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -7.0 V Collector Current - Continuous IC -100
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MSB709
OT-23
MSB709
18-Sep-06
SC-75
SOT-353 b1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1
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L2SD1781KXLT1G
500mA
L2SB1197KXLT1G
OT-23
/TO-236AB
L2SD1781KQLT1G
L2SD1781KQLT3G
L2SD1781KRLT1G
L2SD1781KRLT3G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837LT1G z Features 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3 3.Small NF. 4. Pb-Free Package is Available. 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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L2SC3837LT1G
L2SC3837LT1G
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TRANSISTOR SMD MARKING CODE A45
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G
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LMSB709LT1G
LMSB709LT3G
3000/Tape
10000/Tape
OT-23
TRANSISTOR SMD MARKING CODE A45
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PDF
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marking 13Q SOT-23
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013XLT1G FEATURE Pb-Free Package is available. 3 Ordering Information 1 Device Package Shipping L9013XLT1G SOT-23 3000/Tape&Reel L9013XLT3G SOT-23 10000/Tape&Reel 2 SOT-23 TO-236AB MAXIMUM RATINGS
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L9013XLT1G
OT-23
3000/Tape
L9013XLT3G
10000/Tape
O-236AB)
marking 13Q SOT-23
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PDF
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MSD601
Abstract: Marking yr sot-23 Marking c0 SC-75 sot-23 Marking yr EIA-481 SOT363 SOT-353 b1
Text: MSD601 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current - Continuous IC 100 mA
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MSD601
OT-23
18-Sep-06
MSD601
Marking yr
sot-23 Marking c0
SC-75
sot-23 Marking yr
EIA-481 SOT363
SOT-353 b1
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907AWT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION 1 r Marking Device Shipping 2 LMBT2907AWT1G 20 3000/Tape&Reel LMBT2907AWT3G 20 10000/Tape&Reel CASE 419–02 , STYLE 3
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LMBT2907AWT1G
3000/Tape
LMBT2907AWT3G
10000/Tape
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PDF
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