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    SC 13 TRANSISTOR Search Results

    SC 13 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SC 13 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PMG45UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMG45UN OT363 SC-88)

    qualified

    Abstract: MGD624
    Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906YS OT363 SC-88) PMBT3906YS OT363 SC-88 PMBT3904YS PMBT3946YPN AEC-Q101 qualified MGD624

    Untitled

    Abstract: No abstract text available
    Text: PMN40UPE 20 V, single P-channel Trench MOSFET 13 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN40UPE OT457 SC-74)

    PMBT3906YS

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC
    Text: PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906YS OT363 SC-88) PMBT3906YS SC-88 PMBT3904YS PMBT3946YPN AEC-Q101 TRANSISTOR SMD CODE PACKAGE SOT363 NXP SMD TRANSISTOR MARKING CODE MARKING CODE SMD IC

    PDTB123Y

    Abstract: all ic data PDTB123E PDTB113E
    Text: SO T3 23 PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 13 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF OT323 SC-70) PDTD113EU SC-70 PDTB113EU PDTD113ZU PDTB123EU PDTD123YU PDTB123YU PDTB123Y all ic data PDTB123E PDTB113E

    Untitled

    Abstract: No abstract text available
    Text: PBLS6023D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


    Original     		PDF PBLS6023D OT457 SC-74) AEC-Q101 PBLS6023D

    TRANSISTOR SMD MARKING CODE KF

    Abstract: kf smd transistor
    Text: PBLS6022D 60 V, 1.5 A PNP BISS loadswitch Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)


    Original     		PDF PBLS6022D OT457 SC-74) AEC-Q101 PBLS6022D TRANSISTOR SMD MARKING CODE KF kf smd transistor

    SMD TRANSISTOR MARKING A7

    Abstract: PBSS8110D PBSS9110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 13 July 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D SMD TRANSISTOR MARKING A7 PBSS8110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7

    marking code AC

    Abstract: marking code A.C NXP SMD DIODE MARKING CODE T4
    Text: SO T4 16 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMR290UNE OT416 SC-75) AEC-Q101 marking code AC marking code A.C NXP SMD DIODE MARKING CODE T4

    transistor smd code marking nc

    Abstract: No abstract text available
    Text: SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN27UP OT457 SC-74) transistor smd code marking nc

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMR670UPE OT416 SC-75) AEC-Q101

    2400RPM

    Abstract: motor speed control with forward reverse using SC TRANSISTOR BO 345 AN6656S 2SB1073 AN6656 automatic motor for reverse and forward
    Text: ICs for Motor AN6656, AN6656S Micromotor Forward/Reverse Electronic Governors • Overview AN6656 M Di ain sc te on na tin nc ue e/ d co ce /D is 14 Ref. Voltage Source M ai nt en an Starting Circuit 13 Buffer 7 Buffer Buffer 8 Buffer 1 5 10 8 9 2.54 11 7


    Original     		PDF AN6656, AN6656S AN6656 51min. 16-Lead DIP016-P-0300E) 2400RPM motor speed control with forward reverse using SC TRANSISTOR BO 345 AN6656S 2SB1073 AN6656 automatic motor for reverse and forward

    Untitled

    Abstract: No abstract text available
    Text: CCD Area Image Sensor MW39580AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 M Di ain sc te on na tin nc ue e/ d The MW39580AE is a type-2/3 2.2M-pixel CCD solid state image sensor.


    Original     		PDF MW39580AE MW39580AE

    TRANSISTOR marking 489 code

    Abstract: No abstract text available
    Text: DTA143EE DTA143EUA DTA143EKA Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA143EE, DTA143EUA, and DTA143EKA; 13 a built-in bias resistor allows inverter


    OCR Scan     		PDF DTA143EE DTA143EUA DTA143EKA SC-70) SC-59) DTA143EE, DTA143EUA, DTA143EKA; DTA143EE DTA143EUA TRANSISTOR marking 489 code

    JE4353

    Abstract: 2U 34 mje4343 motorola MJE4340
    Text: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


    OCR Scan     		PDF MJE4340 MJE4341 MJE4342 MJE4343 MJE4351 MJE4352 MJE4353 JE4353 2U 34 mje4343 motorola

    2N6678 motorola

    Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
    Text: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are


    OCR Scan     		PDF T-33-13 2IM6648 2N6676 2N6677 2N6678 MJH6676 MJH6677 MJH6678 2N6676, 2N6677, 2N6678 motorola Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3

    LM 3177

    Abstract: bc5488 BC54BB TF1102 TDA 8390 A PM5518 2066 TVPO BC54b ic tda TDA tda 7805
    Text: 11 UV 04 R C 11 SC 01 SEC A M & C T I Diagram Transm itter Diagram 1 Lime YELLOW L9* CTUM l>* - - MUt£ r- mjmrvf. 5T »Y KO I IFWVtE KWCOL BW 1 TUM . ,• 5LEEP t 13 _8 uT m itx ia 3 2 T CKPiwa HOLD 13 . L lf* «tJ T TU MGT* WCm 1. TlhC MCROflY II ! PtCiZ-


    OCR Scan     		PDF L0305-" LM 3177 bc5488 BC54BB TF1102 TDA 8390 A PM5518 2066 TVPO BC54b ic tda TDA tda 7805

    mc145412

    Abstract: MC145413 145412 MC14551 Dtmfout MC145512
    Text: febE D • ti3b7ES3 ODflTSDD 1 2 3 ■ M0T5 MOTOROLA ■ SEMICONDUCTOR wm motorola sc > telecom TECHNICAL DATA MC145412 M CI 45413 MC145512 Advance Information Pulse/Tone Repertory Dialer Low Power Silicon-Gate CMOS The MC145412/13 and MC145512 are silicon gate, monolithic CMOS


    OCR Scan     		PDF MC145412/13 MC145512 18-pin MC145413 500-Hz 18-Digit MC145412 MC145413-MC145512 145412 MC14551 Dtmfout

    TOSHIBA 9097250

    Abstract: No abstract text available
    Text: ]>e 1 =10^7250 Q01ti77H 1 TOSHIBA {DI SC RE TE /OPT O} 99D 16772 9097250 TOSHIBA <DIS C RE TE/OPTO> TOSHIBA SEMICONDUCTOR ¿/ a sh ih u DT-31-13 FIELD EFFECT TRANSISTOR Y T F 1 5 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF Q01ti77H DT-31-13 045i2 100nA 250yA 150pC, TOSHIBA 9097250

    MJE13007E

    Abstract: JE13006 MJE13Q07 JE13007
    Text: MOTOROLA SC XSTRS/R 1EE F D I b3b72S4 a G fl SB T S ê | T - 33-13 MOTOROLA MJE13006 MJE13007 SEMICONDUCTOR TECHNICAL DATA D esigners Data, Sheet 8 AM PERE NPN SILICON POWER TRANSISTORS 3 00 and 4 0 0 V O L T S 80 W ATTS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS


    OCR Scan     		PDF b3b72S4 MJE13006 MJE13007 MJE13007E JE13006 MJE13Q07 JE13007

    TOSHIBA 1N DIODE

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS


    OCR Scan     		PDF DT-39-13 100nA 250uA 00A/us TOSHIBA 1N DIODE

    HIIA1

    Abstract: No abstract text available
    Text: ISOCOH COilPONENTS LTD ?SC D I 4 flflk, 5 1 0 QDOOlbfi fiTb • ISO D '7 '- V / ' - # 3 HIIA 1 OPTICALLY COUPLED ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 PACKAGE DIMENSIONS IN INCHES MM » t SiSi • ooo. I 68 Si issj i e 0-13


    OCR Scan     		PDF

    Motorola UHF Power Amplifier Module

    Abstract: MHW812A3 motorola transistor cross reference 301H W812 EB107 MHW812A
    Text: MO TO R O L A SC X ST RS /R F h^E b3ti72SH D l D l Db l S3E D noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW812A3 The RF Line UHF Power Am plifier . . . designed for 13 Volt UHF power amplifier applications in industrial and commercial FM equipment operating from 890 to 915 MHz.


    OCR Scan     		PDF b3b72SH EB-107. MHW812A3 Motorola UHF Power Amplifier Module MHW812A3 motorola transistor cross reference 301H W812 EB107 MHW812A

    MJE8502

    Abstract: MJE-8502 MJE8503 1N4934 221A-04 AN-222 AVALANCHE TRANSISTOR transistor ZA A3
    Text: MOTOROLA SC XSTRS/R F 12E D | bBtiTSSM QOÛ53/i i e | T-33-13 MOTOROLA MJE8502 MJE8503 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta S h e e t 5 .0 A M PER E NPN SILICON POWER T R A N SIST O R S SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 7 0 0 and 8 0 0 V O LTS


    OCR Scan     		PDF b3b725M MJE8502 MJE8503 Time-25Â MJE-8502 1N4934 221A-04 AN-222 AVALANCHE TRANSISTOR transistor ZA A3