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    Vishay Intertechnologies T96R157K020ESBS001

    Cap Tant Solid 150uF 20V 10% 2-Pin SMD T/R - Tape and Reel (Alt: T96R157K020ESBS001)
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    Avnet Americas T96R157K020ESBS001 Reel 15 Weeks 300
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    Newark T96R157K020ESBS001 Reel 300
    • 1 $12.88
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    TTI T96R157K020ESBS001 Reel 300
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    TE Connectivity XSB-S001

    Standard Circular Connector XSBBCL,
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    TTI XSB-S001 Each 1
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    Attend Technology Inc 115S-BS00+115S-BT02

    Connector: for cards; Nano SIM; SMT; PIN: 6
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    TME 115S-BS00+115S-BT02 1,050 1
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    SBS001 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SBS001C Sanyo Semiconductor Schottky Barrier Diode Original PDF
    SBS001C-E Sanyo Semiconductor DIODE SCHOTTKY 12V 0.5A 3CP Original PDF

    SBS001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EN5401

    Abstract: SBS001C
    Text: Ordering number:EN5401 SBS001C Schottky Barrier Diode 15V, 500mA Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1148A [SBS001C] Features · Low forward voltage (VF max=0.45V).


    Original     		PDF EN5401 SBS001C 500mA SBS001C] SBS001C-applied EN5401 SBS001C

    SBS001C

    Abstract: No abstract text available
    Text: 注文コード No. N 5 4 0 1 SBS001C No. N 5 4 0 1 20100 SBS001C ショットキバリアダイオード 15V500mA 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。 特長 ・順電圧が低い（VF max=0.45V）


    Original     		PDF SBS001C 15V500mA 500mA 100mA Duty25° ID01115 ID01116 SBS001C

    ENN8206

    Abstract: CPH5810 MCH3312
    Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)


    Original     		PDF CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    CPH5810

    Abstract: MCH3312
    Text: CPH5810 注文コード No. N 8 2 0 6 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5810 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3312）


    Original     		PDF CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312

    TA-0718

    Abstract: 2088a FP107 2SB1396
    Text: Ordering number:EN5413A FP107 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.


    Original     		PDF EN5413A FP107 FP107 2SB1396 SBS001. FP107] TA-0718 2088a

    SBE001

    Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
    Text: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP


    Original     		PDF ECSP1006-2 ECSP1008-2 ECSP1608-4 SB30W03T SB40W03T SB10W05T SB25W05T SBE001 SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M

    2sc6096

    Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
    Text: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages


    Original     		PDF ECSP1208-4-F 12A01M 15C01M 12A01C 15C01C 12A02CH 15C02CH 30A02CH 30C02CH 2sc6096 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S

    TA-1524

    Abstract: A11502 CPH3106 CPH6701 TA72
    Text: 注文コードNo.N 6 0 0 7 A No. N 6 0 0 7 A 40300 半導体ニューズ No.6007 とさしかえてください。 CPH6701 特長 PNPシリコンエピタキシャルプレーナ形トランジスタ ショットキバリアダイオード DC/DCコンバータ用


    Original     		PDF CPH6701 PNP12 CPH6701CPH3106SBS001 600mm2 50Hz1 TA-1524 A11502 CPH3106 CPH6701 TA72

    CPH3109

    Abstract: MCPH6
    Text: Trs. for DC-DC Converter No.1 Step-Down DC-DC Converter & Polarity Inverting DC-DC Converter Series MBIT-II Series : VIN VOUT PNP-Tr&Complex (Tr+SBD) *VIN>VOUT Control IC Low VF SBD PNP-Tr Series Device No. VCBO (V) MCH3106 MCH3109 MCH3105 MCH6101 MCH6102


    Original     		PDF MCH3106 MCH3109 MCH3105 MCH6101 MCH6102 MCH6103 CPH3106 CPH3114 CPH3107 CPH3115 CPH3109 MCPH6

    CPH3106

    Abstract: CPH6701 EN6007
    Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky


    Original     		PDF EN6007 CPH6701 CPH6701] CPH6701 CPH3106 SBS001, EN6007

    CPH5810

    Abstract: MCH3312
    Text: CPH5810 注文コード No. N 8 2 0 6 三洋半導体データシート N CPH5810 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3312）


    Original     		PDF CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312

    CPH3106

    Abstract: CPH6701 TA-1524 marking PA
    Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky


    Original     		PDF ENN6007A CPH6701 CPH6701] CPH6701 CPH3106 SBS001, TA-1524 marking PA

    2SB1396

    Abstract: FP107 ITR10832 ITR10833 ITR10834 ITR10835
    Text: 注文コード No. N 5 4 1 3 A FP107 No. N5413A 81000 開発速報 No. ※ 5413 とさしかえてください。 FP107 特長 PNP エピタキシァルプレーナ形シリコントランジスタ ショットキバリアダイオード複合 DC / DC コンバータ用


    Original     		PDF FP107 N5413A FP107 2SB1396 SBS001 250mm2 25max ITR10842 ITR10841 2SB1396 ITR10832 ITR10833 ITR10834 ITR10835

    sb30

    Abstract: si120
    Text: Smal ¡“Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.


    OCR Scan     		PDF T0-126 T0-126ML MT980707TR sb30 si120

    V23101-D0003-A201

    Abstract: V23102-C0003-A211 V23102 V23102 A0006 A111 V23101-D0104-B201 a211 ECR30 c0006a A201 miniature relay
    Text: Miniature Relay W11 V23102-C0* 2 changeover contacts, bifurcated Immersion cleanable Standard or sensitive For printed circuit mounting, pin arrangement suits 2.54 mm grid in acc. with DIN 40801 and DIN 40803, average Illustration approx. original size Approx. weight 5 g


    OCR Scan     		PDF V23102-C0* ECR3017-D ECR0290-A SBS0019-9 ECR0291-I V23101-D0003-A201 V23102-C0003-A211 V23102 V23102 A0006 A111 V23101-D0104-B201 a211 ECR30 c0006a A201 miniature relay

    SBI60

    Abstract: SBS002C SB600 SB50-09 SB05-05P SBI60-05R to220mf SB50-09J SB50-18 SB60-05H
    Text: Continued from previous page VRRM V Package type 10(A) 5 40 - TO-220ML SBA50-04J - - - SBA50-04Y TO-220 j - - - - SB60-05J - SB60-05K - - T0-220 - SB80-05H SB80-09 - TO-220ML - SB80-05J SB80-09J - T0-3PB - - - SB80-18 TO-220 - SB100-05H S B 100-09 - SBA100-04J


    OCR Scan     		PDF O-220 SB50-09 SB50-18 O-220ML SBA50-04J SB50-09J SBA50-09J O-220MF SB50-18K SBA50-04Y SBI60 SBS002C SB600 SB05-05P SBI60-05R to220mf SB50-18 SB60-05H

    B1396

    Abstract: transistor s72
    Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )


    OCR Scan     		PDF FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2167X2 FP402 B1396 transistor s72

    transistor s72

    Abstract: B1123 B1396 di621 sanyo CG B1121 FP101 FP102 FP103 FP104
    Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )


    OCR Scan     		PDF FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2151X2 FP403 transistor s72 B1123 B1396 di621 sanyo CG B1121

    SB01-05QCA

    Abstract: No abstract text available
    Text: SA0O S m a l l - S i g n a l H i g h - V o l t a g e S c h o t t k y Barr ier Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.


    OCR Scan     		PDF MT991116TR SB01-05QCA