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    SBM22 Search Results

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    SBM22 Price and Stock

    Amphenol PCD ASBM22

    CONN TERM BLK FEED THRU 14-22AWG
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    DigiKey ASBM22 Tray 100
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    Amphenol PCD ASBM22W

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    DigiKey ASBM22W Tray 100
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    Amphenol PCD ASBM22G

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    DigiKey ASBM22G Tray 100
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    Amphenol PCD ASBM22F

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    DigiKey ASBM22F Tray 100
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    Amphenol PCD ASBM22Y

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    DigiKey ASBM22Y Tray 100
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    SBM22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sbm23

    Abstract: SBM22 SBM24PT
    Text: SBM22PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 60 Volts CURRENT 2.0 Amperes SBM26PT FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications


    Original     		PDF SBM22PT SBM26PT 260oC/10 SBM22PT SBM24PT SBM25PT sbm23 SBM22 SBM24PT

    SBM22GP

    Abstract: SBM23GP SBM24GP SBM25GP SBM26GP
    Text: SBM22GP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 60 Volts CURRENT 2.0 Amperes SBM26GP FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications


    Original     		PDF SBM22GP SBM26GP 260oC/10 SBM22GP SBM24GP SBM25GP SBM23GP SBM24GP SBM26GP

    s10p40

    Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge


    Original     		PDF OD-123 S30S20PT S30S30PT S30S35PT s10p40 C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT

    s10p40

    Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK


    Original     		PDF OD-123 S15P20 S15P30 S15P40 s10p40 SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35

    varactor diode capacitance measurement

    Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
    Text: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY


    OCR Scan     		PDF t-07-11 MA48700 varactor diode capacitance measurement impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz Gunn Diode e band

    MA4E917

    Abstract: 00G132 MA4E913
    Text: M/A-COn SEMICOND-.BRLNGTON 11 D • SbM2214 D0D1322 T H m e Ajfocam T - 07 -o y Ceramic Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ CAN BE SCREENED TO JANTXV LEVELS ■ UNIFORM RF CHARACTERISTICS Applications


    OCR Scan     		PDF SbM2214 D0D1322 MA4E917 00G132 MA4E913

    10J capacitor

    Abstract: capacitor 50uf transistor M 839 305 MOSFET transistor capacitor 280v DU28120U Amp. mosfet 800 watt RIA 39 transistor 22 pf trimmer capacitor 839 transistor
    Text: A flk Ù D M M a n A M P com pany RF MOSFET Power Transistor, 120W, 28V 2 - 1 7 5 MHz DU28120U Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated O utput Power Lower Noise Figure Than Com petitive Devices


    OCR Scan     		PDF DU28120U 600mA 5-80pF 4-40pF 9-180pF 500pF 1000pF SbM2205 10J capacitor capacitor 50uf transistor M 839 305 MOSFET transistor capacitor 280v Amp. mosfet 800 watt RIA 39 transistor 22 pf trimmer capacitor 839 transistor

    MA40092

    Abstract: No abstract text available
    Text: M/ A- CO N S E M I C O N D n B R L N G T O N 11 ]> • 5b42S14 GOGIETE S ■ M I C Stripline Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER


    OCR Scan     		PDF 5b42S14 MA40092

    Untitled

    Abstract: No abstract text available
    Text: 5642214 N/A-CON m/a-com semiconductor SEMICONDUCTOR 930 T3 00638 PE|St4ESm T '3 < 7 . o DDDDtaa s ' 0 V~ MA4F200 Series ûallium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate


    OCR Scan     		PDF MA4F200

    2N6665

    Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
    Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


    OCR Scan     		PDF SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953

    diode BY 226

    Abstract: DIODE RING QUAD
    Text: n/ A- CO M S E U I C O N D i B R L N G T O N 11 D • 5fc>45214 0 0 Q 1 3 1 0 3 ■ M I C 7^ 07-0 Schottky Barrier Beam-Lead and Packaged Ring Quads For Double Balanced Mixers up to 18 GHz Features ■ SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING ■ HIGH RELIABILITY


    OCR Scan     		PDF