QFN 48L
Abstract: PE33361 PE33631 PE3511 731 MOSFET PE3336 PE3341 PE3342 PE3501 PE3512
Text: PLLs, Prescalers, Quad Array May 2010 UltraCMOS Phase-Locked Loops, Prescalers and MOSFET Quad Array RF IC Solutions To Condition The RF Signal Chain Manufactured on the Company’s proprietary UltraCMOS™ silicon-on-sapphire process technology, these products
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Tower10B-6
QFN 48L
PE33361
PE33631
PE3511
731 MOSFET
PE3336
PE3341
PE3342
PE3501
PE3512
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Untitled
Abstract: No abstract text available
Text: Foundry Services May 2010 Peregrine’s UltraCMOS RF and Mixed-Signal Wafer Foundry Services Unprecedented benefits in speed, power, integration and cost The UltraCMOS process is a patented silicon-on-sapphire technology SOS that has for years been recognized as a
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nmos transistor 0.35 um
Abstract: No abstract text available
Text: UltraCMOS Process Technology May 2010 UltraCMOSTM Technology - The Ultimate SOI Ultra-Thin-Silicon UTSi on sapphire substrates enables monolithic RF integration The need for RF products and components that are smaller, higher performance, more efficient and less expensive is
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s3857
Tower10B-6
nmos transistor 0.35 um
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CQFJ
Abstract: CSOIC hbm 216 LA 7652 PE9354 PE97042 PE9701 PE9309 PE95420 PE9601
Text: High-Reliability Products May 2010 Peregrine’s High-Reliability UltraCMOS RF IC Portfolio Expands TM New SPDT Switch, Ultra-low Phase Noise PLLs, DSA and Prescalers Lead the Industry Peregrine Semiconductor’s recent advancements on UltraCMOS silicon-on-sapphire technology have enabled
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Tower10B-6
CQFJ
CSOIC
hbm 216
LA 7652
PE9354
PE97042
PE9701
PE9309
PE95420
PE9601
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Untitled
Abstract: No abstract text available
Text: DOMINANT Semiconductors DomiLED InGaN - DDx-DJx • High brightness surface mount LED. • Based on InGaN / Sapphire technology. • 120° viewing angle. • Small package outline LxWxH of 2.8 x 3.2 x 1.8 mm. • Qualified according to JEDEC moisture sensitivity Level 2.
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Untitled
Abstract: No abstract text available
Text: PLLs, Prescalers, Mixers June 2007 UltraCMOSTM Phase-Locked Loops, Prescalers and Mixers RF IC Solutions To Condition The RF Signal Chain Manufactured on the Company’s proprietary UltraCMOS silicon-on-sapphire process technology, these products draw from many years of high-performance RF CMOS and mixedsignal IC experience. UltraCMOS enables the combination
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F-92380
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body contact FET soi
Abstract: rubicon peregrine
Text: NEWS RELEASE EDITORIAL CONTACT: Rodd Novak, V.P., Marketing 858 731-9464 9380 Carroll Park Drive San Diego, CA USA 92121 858-731-9400 Cindy Trotto, Marketing Communications Manager (602) 750-7203 Reader/Literature Inquiries: www.psemi.com sales@psemi.com
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180NM
Abstract: ibm 130nm CMOS 180NM IBM LTE RF Multiband 180-nm
Text: NEWS RELEASE EDITORIAL CONTACT: Rodd Novak, Chief Marketing Officer Phone: +1-858-731-9464 Peregrine Semiconductor Corporation Cindy Trotto, Marketing Communications Manager Phone: +1-602-750-7203 9380 Carroll Park Drive San Diego, CA, USA 92121 +1-858-731-9400
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180nm
ibm 130nm CMOS
180NM IBM
LTE RF Multiband
180-nm
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HARP
Abstract: PE42660 PE42671 GSM frequency reuse gsm antenna pcb microwave antenna 1500 MHz nokia cmos gsm pcb antenna
Text: AN ULTRA-LINEAR SP7T HANDSET ANTENNA SWITCH FOR GSM/PCS/ EDGE/WCDMA APPLICATIONS I ndustry standards bodies — such as the 3GPP Standards organization governing global cellular networks such as GSM, PCS, EDGE and WCDMA — are traditionally chartered to create a stable business environment for advancing technology in a competitive market. These industry standards —
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9RV3
Abstract: No abstract text available
Text: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile
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DS-VA-GT1000-eng
GT1000
GT1020
GT1024
9RV3
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PE42660
Abstract: PE42672 microwave Duplexer Peregrine SP6T ltcc chip SP6T ASM
Text: November 2005 Making the Call on 3G: Finding the Right Switch Solution for Complex High-Frequency Bands by Rodd Novak, V.P., Marketing & Business Development, Peregrine Semiconductor Corporation T hen considered ‘high-tech’ systems, the first analog cellular handsets were quite basic,
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led light 10 watt
Abstract: led 10 watt 10 watt led led ufo 10 watt L.E.D led 10 watt 1050ma 10-50mA 1050MA
Text: American Opto Plus LED PU-FL0109-WC Power UFO LED – 1050mA Lighting Application Package Dimensions Mechanical Dimensions Version 1.0 – Feb. 17, 2005 High Power, High Output 1050mA Drive Current w/ Proper Heat Sink 12 Watt, 60deg Viewing Angle High Power, High Output
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PU-FL0109-WC
1050mA
60deg
100ns)
1050mA
led light 10 watt
led 10 watt
10 watt led
led ufo
10 watt L.E.D
led 10 watt 1050ma
10-50mA
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Untitled
Abstract: No abstract text available
Text: SUPERBRIGHT LED LAMP VAOL-5LWY4 Feature § § § Package Dimension Low Power Consumption High Intensity I.C. compatible Applications § § § § Commercial Outdoor Sign Board Front Panel Indicator Dot-Matrix Module LED Bulb Description § § § These High Intensity LEDs are Based on
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passive mixer
Abstract: PE4150 peregrine
Text: NEWS RELEASE EDITORIAL CONTACT: Reader/Literature Inquiries: Mark Schrepferman, Director, Comm/Industrial Products Phone: 858-731-9512 Cindy Trotto, Marketing Communications Manager Phone: 602-750-7203 sales@psemi.com Peregrine Semiconductor Corporation 9380 Carroll Park Drive
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UHF-900MHz
passive mixer
PE4150
peregrine
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PE42632
Abstract: PE42674 pe4263
Text: NEWS RELEASE EDITORIAL CONTACT: Rodd At Novak, V.P. Marketing 858 731-9464 9450 Carroll Park Drive San Diego, CA 92121 858-731-9400 Cindy Trotto, Marketing Communications Manager (602) 750-7203 Reader/Literature Inquiries: Richardson Electronics 1-800-737-6937 or sales@psemi.com
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Superbright LED
Abstract: 5LWY VAOL-5LWY4 LED Sign Board Diagram sapphire wc
Text: SUPERBRIGHT LED LAMP VAOL-5LWY4 Feature § § § Package Dimension Low Power Consumption High Intensity I.C. compatible Applications § § § § Commercial Outdoor Sign Board Front Panel Indicator Dot-Matrix Module LED Bulb Description § § § These High Intensity LEDs are Based on
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11kHz
593-VAOL-5LWY4
Superbright LED
5LWY
VAOL-5LWY4
LED Sign Board Diagram
sapphire wc
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Untitled
Abstract: No abstract text available
Text: Digital Step Attenuators January 2006 PE430x Monolithic RF UltraCMOSTM Digital Step Attenuators IP3 >50 dBm maintained from 1 MHz to 2.5 GHz The PE430x family of Digital Step Attenuators DSAs features unprecedented levels of broadband linearity, attenuation
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single chip satellite multiswitch
Abstract: sp4t switch die SIGE 2528 PE42692
Text: Cellular/Communications Switches February 2009 High-performance UltraCMOS Cellular/Communications Switches HaRPTM Technology Advances UltraCMOSTM Handset Switches Peregrine’s high-performance cellular handset switches offer a different approach to solving the toughest high-power,
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single chip satellite multiswitch
sp4t switch die
SIGE 2528
PE42692
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Untitled
Abstract: No abstract text available
Text: Broadband Switches February 2009 75Ω UltraCMOS Switches Replace Mechanical Relays and Pin Diodes High Isolation, UltraCMOS™ Switch Portfolio Ideal for CATV, DBS, DTV Applications and More From Peregrine Semiconductor, the world’s highest performance, high-isolation broadband switches feature
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engine73
10B-6
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QFN-32L 5X5
Abstract: No abstract text available
Text: Wireless RF Switches February 2009 Highly Rugged UltraCMOS Switches Extend Performance to 7.5 GHz High Linearity, 2 kV HBM ESD and CMOS Control Interface Ideal for Wireless Applications The Peregrine UltraCMOS™ RF switches feature high ESD tolerance, high linearity, high isolation and low insertion
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10B-6
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PE43701
Abstract: Digital Step Attenuators
Text: Digital Step Attenuators April 2009 PE43xxx Monolithic RF UltraCMOS Digital Step Attenuators TM New PE43x0x series provides versatile HaRP -enhanced 5, 6 and 7-bit DSAs with high linearity TM The PE43xxx family of Digital Step Attenuators DSAs features unprecedented levels of broadband linearity,
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PE43x0x
linea73
10B-6
PE43701
Digital Step Attenuators
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USART 8251
Abstract: intel 8251 USART 8251 microprocessor block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER intel 8251 8251 usart 8251 programmable interface INTEL 8251A USART intel 8251 USART control word format 8251 intel
Text: MA28151 Radiation Hard Program m able Com m unication Interface Marconi Electronic Devices FEATURES BLOCK DIAGRAM R ad iatio n Hard to 1M R ad Si Latch up free. High SEU im m unity Transm it B u ffe r D7-D0 Silicon-on-Sapphire techno log y S ynchro no us 5-8 Bit Characters; Internal or
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MA28151
MAS-281
MA28151
MAS281
Commercial-55
MIL-M-38510
USART 8251
intel 8251 USART
8251 microprocessor block diagram
8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER
intel 8251
8251 usart
8251 programmable interface
INTEL 8251A USART
intel 8251 USART control word format
8251 intel
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Untitled
Abstract: No abstract text available
Text: G E C P L E S S E Y ma28isi_ Radiation Hard Programmable Communication Interface si0204fds issue 2 September 1990 Features • R ad iatio n hard to 1 M Rad Si a • Latch up fre e , high SEU im m unity • Silico n-o n-Sapphire techn olo g y • S y n ch ro n o u s 5-8 Bit characters; internal or
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ma28isi_
si0204fds
MAS281
MA28151
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Untitled
Abstract: No abstract text available
Text: M GEC PLESS EY S E M I C O N D U C T O R S D S 3 5 1 8 -2 .4 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's C M O S -S O S high p e rfo rm a n c e , ra d ia tio n ha rd, 3n.m technology. The GPS Silicon-on-Sapphire process provides significant
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MA7001
MA7001
1015n/cma,
MIL-STD-883
1x105
37bflS22
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