Untitled
Abstract: No abstract text available
Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.
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K7K1636T2C
K7K1618T2C
512Kx36
K7S1636T4C
K7S1618T4C
1Mx18
11x15
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Samsung 8Gb MLC
Abstract: samsung 32GB Nand flash MLC memory lightscribe Samsung 32Gb Nand flash Samsung 8Gb MLC Nand flash SAMSUNG NAND FLASH samsung external dvd writer dvd writer laser diode SATA hard disk for samsung notebook dvd power sata connector
Text: Samsung Storage Solutions The Broadest Offering Today, from Optical and Hard Drives to Breakthrough Flash Storage Samsung Storage Solutions Data Storage for Any Application Samsung is the world’s second-largest semiconductor manufacturer whose deep expertise in hardware
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BR-06-STOR-002
Samsung 8Gb MLC
samsung 32GB Nand flash MLC memory
lightscribe
Samsung 32Gb Nand flash
Samsung 8Gb MLC Nand flash
SAMSUNG NAND FLASH
samsung external dvd writer
dvd writer laser diode
SATA hard disk for samsung
notebook dvd power sata connector
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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gddr3
Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
Text: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3 is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important
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512Mb
200Mhz
128Mb
8Mx16
K4D261638F-TC5A
DS-06-GDRAM-001
gddr3
SAMSUNG LAPTOP
SAMSUNG GDDR4
K4D263238
84 FBGA
K4D55323
K4J52324Q
samsung
K4D261638
84FBGA
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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OneNAND
Abstract: oneNand flash samsung roadmap sensing "nor flash memory" samsung SEC-ONENAND-AN-001 samsung 2GB X16 Nand flash onenand block map NAND FLASH 64MB samsung onenand samsung 2GB Nand flash
Text: SEC-ONENAND-AN-001 Samsung OneNAND System Requirement Samsung Electronics Copyright ⓒ 2004 Samsung Electronics Co.,LTD. Revision History Version 0.1 Date NOV-25-2004 Comment Initial version Author Seungeun Lee Approval Document Overview - Status: - Num of Pages:
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SEC-ONENAND-AN-001
NOV-25-2004
OneNAND
oneNand flash
samsung roadmap
sensing "nor flash memory" samsung
SEC-ONENAND-AN-001
samsung 2GB X16 Nand flash
onenand block map
NAND FLASH 64MB
samsung onenand
samsung 2GB Nand flash
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samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile
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BRO-09-DRAM-001
samsung eMMC 4.5
eMMC
samsung* lpddr2
lpddr2
SAMSUNG emmc
emmc 4.5
emmc samsung
SAMSUNG moviNAND
lpddr2 mcp
samsung lpddr2
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32 inch TV samsung lcd Schematic
Abstract: BA41-00786A U538 LE88CLPM U52-5 ATI-M72S BA41-00753A Marvell 88E8038 ap4435gm Socket AM2
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D PALAU C B DRAW : : : : : : : SANTA ROSA STD MAIN
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BA41-00753A
BA41-00786A
32 inch TV samsung lcd Schematic
U538
LE88CLPM
U52-5
ATI-M72S
Marvell 88E8038
ap4435gm
Socket AM2
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samsung service manual
Abstract: rm2510 STD110
Text: V SAMSUNG SEC ASIC World Wide Network ELECTRONICS DESIGN CENTERS SSI Samsung Semiconductor Incorporated 3725 North First Street, San Jose, CA95134-1708, U.S.A. TEL 1 -408-544-4545 FAX (1)-408-544-4950 SSINE Samsung Semiconductor, INC. 238 Littleton Road, Suite 201
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CA95134-1708,
samsung service manual
rm2510
STD110
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samsung nor flash
Abstract: NOR FLASH internal flash corruption
Text: Program Method of NOR Flash Version 1.0, Apr-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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Apr-2009
80us/11
32Words
64Words
samsung nor flash
NOR FLASH
internal flash corruption
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samsung ddr3
Abstract: DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket
Text: Samsung DDR3 SDRAM Next-Generation Memory Will Reach 1.6Gb/second Samsung DDR3 Unbuffered DIMMs will be available in densities from 256MB to 2GB and DDR3; component densities are 512Mb to 1Gb. Massive Bandwidth and Low Power Consumption Tomorrow’s main memory standard, Samsung
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256MB
512Mb
Samsun378B2873CZ0-C
128Mx8)
256Mx64
M378B5673CZ0-C
DS-06-DRAM-006
samsung ddr3
DDR3 socket datasheet
DDR3 jedec
ddr2 laptop pin
DDR3 DIMM 240 pin names
"DDR3 SDRAM"
DDR3 1gb dimm
DDR3 DIMM
DDR3 dimm socket
DDR3 socket
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MEC1308-NU
Abstract: ASM1442 R5538 RTL8103 32 inch TV samsung lcd Schematic slb9635 SMD DIODE AA45 data sc472 SC454 BA41-01
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Stanford_14/15 C CPU : Chip Set :
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BA41-01119A
BA41-01120A
SHORT505
SHORT506
SHORT507
AO4435L
33-C2
41-B3
41-C4
RHU002N06
MEC1308-NU
ASM1442
R5538
RTL8103
32 inch TV samsung lcd Schematic
slb9635
SMD DIODE AA45 data
sc472
SC454
BA41-01
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single mode optical fiber 1550 nm
Abstract: Telcordia GR-20-CORE optical fiber cable G.652 GR-20-CORE samsung ribbon samsung ribbon vs Samsung tube tv G.652 samsung IEC793 Fiber low chromatic dispersion
Text: Samsung Electronics Fiberoptics products Single Mode Optical Fiber SAMSUNG Single Mode optical fiber is d esigned and manufactured with a matched cladding, step index profile, using Samsung’s advanced MCVD process. This design provides versatile in applications for long haul, regional and
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1130E,
1-877-ssoptic/1-877-776-7842
single mode optical fiber 1550 nm
Telcordia GR-20-CORE
optical fiber cable G.652
GR-20-CORE
samsung ribbon
samsung ribbon vs
Samsung tube tv
G.652 samsung
IEC793
Fiber low chromatic dispersion
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K8S2815ET
Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
Text: Synchronous burst mode register setting for NOR Application Note Version 1.0, May-2009 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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UINT16;
UINT16
0x555
512Mbit,
K8S2815ET
samsung nor flash
128M-BIT
0x55H
K8S6415ET
K8F1215E
0x555
128-MBIT
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Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.
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AN1838
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
Samsung k9f1208u
SAMSUNG NAND FLASH
samsung nand
WSOP48
K9F28
NAND FLASH BGA
samsung 1Gb nand flash
NAND01G cache program
"NAND Flash"
128M NAND Flash Memory
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"at command" Samsung
Abstract: samsung nor flash 555h NOR FLASH
Text: SEC-Mobile-ROM Protection Sequence For NOR Flash Application Note Version 1.0, May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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555h/AAh
2AAh/55h
555h/90h
XXX/00h
"at command" Samsung
samsung nor flash
555h
NOR FLASH
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC2012F*CS • Product : Thick - Film chip RESISTOR • Description : 2012, ±1%, 1Ω~1㏁ , 1/8W A. Samsung Part Number RC 2012 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor
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RC2012F*
10seconds
100cycles,
/30min
125/30min
000hours
90min
30min
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC2012G*CS • Product : Thick - Film chip RESISTOR • Description : 2012, ±2%, 1Ω~1㏁ , 1/8W A. Samsung Part Number RC 2012 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor
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RC2012G*
10seconds
100cycles,
/30min
125/30min
000hours
90min
30min
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3216G*CS • Product : Thick - Film chip RESISTOR • Description : 3216, ±2%, 1Ω~1㏁ , 1/4W A. Samsung Part Number RC 3216 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor
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RC3216G*
10seconds
100cycles,
/30min
125/30min
000hours
90min
30min
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10R1
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3225F*CS • Product : Thick - Film chip RESISTOR • Description : 3225, ±1%, 1Ω~1㏁ , 1/3W A. Samsung Part Number RC 3225 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor
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RC3225F*
10seconds
100cycles,
/30min
125/30min
000hours
90min
30min
10R1
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RC3216F
Abstract: chip resistor 3216
Text: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3216F*CS • Product : Thick - Film chip RESISTOR • Description : 3216, ±1%, 1Ω~1㏁ , 1/4W A. Samsung Part Number RC 3216 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor
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RC3216F*
10seconds
100cycles,
/30min
125/30min
000hours
90min
30min
RC3216F
chip resistor 3216
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HD49748NT
Abstract: 00-GY HD49748 Samsung vk 1261 samsung capstan motor
Text: ¡HD 49748 NT Ukiad scalony duzej skali integracji HD 49748 NT jest procesorem servo ^astosowanym w magnetowidach SAMSUNG SE 9000, SAMSUNG VD |R225, SAMSUNG VK 1260, SAMSUNG VK 1261, SAMSUNG VK 8220 i pothodnych. Sterowany jest z ukladu ¡iPD 75216 PAL system control, nadzorujje í steruje obrotami silników trójfazowych w blokach capstan motor i drum
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than
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samsung DDR3 SDRAM 2GB
Abstract: i7 nehalem DDR3 DIMM Samsung ddr3 1600 SDRAM
Text: Memoria DDR3: da oggi potrai Fare più cose con meno energia. Samsung Semiconductor Europe, 2008 e l'Immaginazione spicca 11volo © Samsung Semiconductor Europe 2008 Memoria avanzata DDR3 Samsung per PC Il nuovo standard prestazionale nel campo delle memorie
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240pin
25GB/secondo.
D-65760
samsung DDR3 SDRAM 2GB
i7 nehalem
DDR3 DIMM
Samsung ddr3 1600 SDRAM
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