S3FM02G
Abstract: No abstract text available
Text: S3FM02G 32-Bit CMOS Microcontrollers Revision 1.34 August 2012 User's Manual 2012 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication
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S3FM02G
32-Bit
S3FM02G
S3FM02G.
128-ETQFP-1414
128-ETQFP-1414
128ETQFP-1414
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Untitled
Abstract: No abstract text available
Text: S3FM02G 32-Bit CMOS Microcontrollers Revision 1.20 October 2011 User's Manual 2011 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication
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S3FM02G
32-Bit
S3FM02G
S3FM02G.
128-ETQFP-1414
128-ETQFP-1414
128ETQFP-1414
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Untitled
Abstract: No abstract text available
Text: S3FN429 32-bit CMOS Microcontrollers Revision 0.00 September 2011 User's Manual 2011 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication
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S3FN429
32-bit
44-QFP-1414
44-QFP-1414
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samsung service manual
Abstract: rm2510 STD110
Text: V SAMSUNG SEC ASIC World Wide Network ELECTRONICS DESIGN CENTERS SSI Samsung Semiconductor Incorporated 3725 North First Street, San Jose, CA95134-1708, U.S.A. TEL 1 -408-544-4545 FAX (1)-408-544-4950 SSINE Samsung Semiconductor, INC. 238 Littleton Road, Suite 201
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CA95134-1708,
samsung service manual
rm2510
STD110
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gu 81
Abstract: Data sheet 1713 M 9697 coasia dawin
Text: V SAMSUNG Samsung ASIC World Wide Network ELECTRONICS DESIGN CENTERS SSSI Samsung Semiconductor Incorporated 85 W. TASMAN DR., San Jose, CA95134-1713, U.S.A. TEL 1 -408-544-4545 FAX (1)-408-544-4950 SWTC South West Technology Center 7700 Irvine Center Drive Suite 600
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CA95134-1713,
gu 81
Data sheet 1713
M 9697
coasia
dawin
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T-CON BOARD samsung
Abstract: siren 16C550 FM24653 ISO-14001
Text: USER′S MANUAL S3F401F 16/32-BIT RISC MICROPROCESSOR November, 2007 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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S3F401F
16/32-BIT
256K-byte
256-byte
S3F401F
100-QFP-1420
100-QFP-1420C
T-CON BOARD samsung
siren
16C550
FM24653
ISO-14001
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T-CON BOARD samsung
Abstract: 16x12bit 16C550 FM24653 ISO-14001
Text: USER′S MANUAL S3F401F 16/32-BIT RISC MICROPROCESSOR November, 2007 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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S3F401F
16/32-BIT
256K-byte
256-byte
S3F401F
100-QFP-1420
100-QFP-1420C
T-CON BOARD samsung
16x12bit
16C550
FM24653
ISO-14001
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S3FN60D
Abstract: S3FN60D_UM_REV1.30
Text: S3FN60D USB Remote 32-bit MCU Revision 1.30 January 2012 User's Manual 2012 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. “Samsung” reserves the right to make changes to the information in this publication
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S3FN60D
32-bit
S3FN60D
64-pin
S3FN60D_UM_REV1.30
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sata to pata chips
Abstract: samsung LCD problem samsung hdd spinpoint slim odd sata interface pata Samsung sd M60S 2.5 inch HDD SATA of samsung V120
Text: PRESS RELEASE March 08, 2005 CeBIT Product launches Here, Samsung is introducing the core component of IT industry, the hard disk drive. These award winning drives provide customers the satisfaction of reliability for their PC systems and handheld devices.
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7200RPM
125GB/platter
250GB.
133MB/s
sata to pata chips
samsung LCD problem
samsung hdd
spinpoint
slim odd sata interface
pata
Samsung sd
M60S
2.5 inch HDD SATA of samsung
V120
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RCA catalog
Abstract: hd receiver DTR1000 HDTV antenna IR 720P Remote analog Display Samsung sd DSUB-15 digital closed caption mini-din s video
Text: Digital Terrestrial Receiver DTR1000 The excellent quality of the eSTB line of set-top-boxes is fully guaranteed by Samsung Fully Compliant with ATSC Digital Television Standard Receives 8VSB Terrestrial Broadcasting RF signal 5.1-channel Dolby AC-3 Audio Decoding
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DTR1000
RCA catalog
hd receiver
DTR1000
HDTV antenna
IR 720P
Remote analog Display
Samsung sd
DSUB-15
digital closed caption
mini-din s video
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RADEON IGP 216
Abstract: IBM motherboard socket 478 rev 1.6 wireless TV headphone mini project 9000IGP ATI 216 bga RC300MD r5c485 215 bga ati ATI-IXP150 ATI MOBILITY RADEON 9000
Text: This Document can not be used without Samsung’s authorization. 2 Product Specification 2-1 System Specification 2-1-1 System Specification SPECIFICATION ITEM CPU REMARKS Intel Dothan, Mobile Celeron M Processor Mobile Pentium-M Dothan 730~770, 1.6~2.13GHz,
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13GHz,
533MHz
512KB
RC300MD.
SB150
PC2700
333MHz)
256MB/512MB,
1024X768)
RADEON IGP 216
IBM motherboard socket 478 rev 1.6
wireless TV headphone mini project
9000IGP
ATI 216 bga
RC300MD
r5c485
215 bga ati
ATI-IXP150
ATI MOBILITY RADEON 9000
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SAMWHA RG
Abstract: Samwha rg series SAMWHA wd SAMWHA WD SERIES Samwha LT SERIES
Text: SERIES COMPARISON TABLE OF SAMSUNG vs SAMWHA Samwha took over the Aluminum Electrolytic capacitors division of Samsung Electro-Mechanics in 2002. Series comparison of Samsung Vs Samwha is listed in Table below. Ite m SURFACE M OUNT A L U M IN U M E L E C T R O L Y T IC
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2000h
1000h
3000h
SAMWHA RG
Samwha rg series
SAMWHA wd
SAMWHA WD SERIES
Samwha LT SERIES
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DG113
Abstract: Samsung Capacitor sse samsung pram
Text: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7
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KM41V4000LL
KM41V4000LL
130ns
150ns
180ns
304x1
KM41V4000/L
DG113
Samsung Capacitor sse
samsung pram
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C125AJ KMM372C125AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C125A is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C125A consists of four CMOS • Performance Range:
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KMM372C125AJ
2Mx72
KMM372C125AJ
KMM372C125A
1Mx16bit
400mii
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM374S823BTL PC66 SDRAM MODULE KMM374S823BTL SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823BTL is a 8M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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KMM374S823BTL
KMM374S823BTL
8Mx72
400mil
168-pin
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h1331
Abstract: No abstract text available
Text: DRAM MODULE KMM364V400AK/AS KMM364V400AK/AS Fast Page Mode 4Mx64 DRAM DIMM, 4K Refresh, 3.3V G EN ERA L DESCRIPTION FEATURES The Samsung KMM364V400A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V400A consists of sixteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mil packages
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KMM364V400AK/AS
4Mx64
KMM364V400AK/AS
KMM364V400A
300mil
48pin
168-pin
h1331
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uras 14 pinout
Abstract: No abstract text available
Text: K M 4 4 V 1 0 0 0 /L J Q SAM SUNG im x 4 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG EL ECTRONI CS INC FEATUHtö •I SSE 7^4142 0 0 11 3 4 5 ATT « S I I G K GENERAL DESCRIPTION 2 V I *7 The Samsung KM 44V1000/L is a high speed
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KM44V1000/L
130ns
150ns
180ns
44V1000/L
576x4
uras 14 pinout
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MAXIM 1535 CE
Abstract: No abstract text available
Text: S M F -06100 ELECTRONICS Samsung M icrow ave Sem iconductor G ain O ptim ized G aAs FET 2 -2 0 GHz Description Features The SMF-06100 is a 600 xm n-channel MESFET with 0.5 urn gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and
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SMF-06100
MAXIM 1535 CE
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.
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KM41C4001A
130ns
150ns
180ns
DD132DS
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: KM4132G512A CMOS SGRAM 16Mbit SGRAM 256K X 32bit x 2 Banks Synchronous Graphic RAM LVTTL Revision 1.1 June 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Jun. 1999 ELECTRONICS KM4132G512A CMOS SGRAM
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KM4132G512A
16Mbit
32bit
KM4132G512A-5/7/8
20ns/21
ns/20ns
KM4132G512A-7/8
67ns/68ns
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transistor
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR IM E O INC MPS29Ö7 7^4145 000730*1 T PNP EPITAXIAL SILICON TRANSISTOR — - :— “— . '• " ' > * T -29 -21 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Vcw=40V • Collector Dissipation: Pc (max >825mW
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MPS29
825mW
transistor
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Untitled
Abstract: No abstract text available
Text: SMP-10008-2 ELECTRONICS Volt3C|G VSHSblG Attenuator Samsung Microwave Semiconductor DC •8 GHz Description Features The SMP-10008-2 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit MMIC) housed in a low-cost Small Outline Integrated Circuit
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SMP-10008-2
SMP-10008-2
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KS84C21
Abstract: MEC 2MHZ SS52M 430-0144
Text: KS84C21/C22 ¡ H SAM SUNG DYNAMIC RAM CONTROLLERS Preliminary Semiconductor September 1988 FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform ance dynamic RAM DRAM controllers. They simplify
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KS84C21/C22
KS84C21
KS84C22
MEC 2MHZ
SS52M
430-0144
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Untitled
Abstract: No abstract text available
Text: SMP-10008-1 ELECTRONICS Voltage Variable Attenuator Samsung Microwave Semiconductor DC - 8 GHz Description Features The SMP-10008-1 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC) housed in a low-cost Small Outline Integrated Circuit
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SMP-10008-1
SMP-10008-1
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