samsung eMMC 4.5
Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile
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BRO-09-DRAM-001
samsung eMMC 4.5
eMMC
samsung* lpddr2
lpddr2
SAMSUNG emmc
emmc 4.5
emmc samsung
SAMSUNG moviNAND
lpddr2 mcp
samsung lpddr2
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Untitled
Abstract: No abstract text available
Text: K1S5616BCM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1S5616BCM
256Mb
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KSS-210A
Abstract: KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1
Text: Manufacturer Model Pickup AIWA CAB500 KSS150A AIWA CADW500 KSS150A AIWA CNX400 KSS210A AIWA CSDEX1 KSM2101BA AIWA CSDEX1 KSS210B AIWA CSDEX210 KSM2101BA AIWA CSDEX210 KSS210B AIWA CSDEX310 KSM2101BA AIWA CSDEX310 KSS210B AIWA CVDZ93W KSS150A AIWA CX810Z KSS210A
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CAB500
CADW500
CNX400
CSDEX210
CSDEX310
CVDZ93W
CX810Z
CXL60
KSS-210A
KSS210A
sanyo SF90
SH1106
SOAD70A
KSS150A
PEA1030
KSS210B
SOALP1200
cdm12.1
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MAC-24
Abstract: C63C
Text: C&M Development Team Calm16Driver Title Document Number Abstract Calm16Driver TN_CNM_Calm16Driver_20040107 The document gives details regarding the CalmSHINE16 compiler driver, its invocation and command line options. C&M Development Team / System LSI Division
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Calm16Driver
Calm16Driver
CalmSHINE16
InformCalmasm16
Calmlink16
Cprep16
\CalmSHINE16\Include\Header
Calmcc16
Calmopt16
MAC-24
C63C
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ks24l641
Abstract: EEPROM 24LC64 24AA64 24LC64 AK6012AF AT24C64 M24C64 NJU26100 NJU26150 AD127
Text: NJU26150 汎用デジタル シグナル プロセッサ • 概 要 NJU26150は２４ビットDSPコアを持つ汎用デジタル・シグナル・プロセッサで、 ホストプロセッサの制御無しに外部のEEPROM からDSPのPRAMにプログラムを
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NJU26150
NJU26150DSP
NJU261503
ROMNJU26100
38MHz
24bit
32fs/64fs
768fsMCK
384fs
ks24l641
EEPROM 24LC64
24AA64
24LC64
AK6012AF
AT24C64
M24C64
NJU26100
NJU26150
AD127
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Untitled
Abstract: No abstract text available
Text: 20-S3-C2460-072006 USER'S MANUAL S3C2460 32-Bit RISC Microprocessor Revision 1.00 S3C2460 32-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.00 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at
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20-S3-C2460-072006
S3C2460
32-Bit
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DESIGN OF TRAFFIC JAM DETECTION IN JAVA
Abstract: SPI NAND FLASH samsung k9
Text: 21-S3-C2460-072006 USER'S MANUAL S3C2460 32-Bit RISC Microprocessor Revision 1.00 S3C2460 32-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.00 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at
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21-S3-C2460-072006
S3C2460
32-Bit
DESIGN OF TRAFFIC JAM DETECTION IN JAVA
SPI NAND FLASH samsung k9
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phison
Abstract: No abstract text available
Text: Room 813, Building 53, 195-88, Chung Hsing Road, Section 4, Chutung, Hsinchu, Taiwan 310, R.O.C. Tel : 886-3-5910208-10 or 17 or 28 Fax : 886-3-5910209 Email : Sales@phison.com kspua@phison.com Phison Electronics Corporation USB/Flash Memory Solution Controller Specification
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PS-1001F/PS-1011F
S-02006
phison
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phison
Abstract: No abstract text available
Text: Room 813, Building 53, 195-88, Chung Hsing Road, Section 4, Chutung, Hsinchu, Taiwan 310, R.O.C. Tel : 886-3-5910208-10 or 17 or 28 Fax : 886-3-5910209 Email : Sales@phison.com kspua@phison.com Phison Electronics Corporation USB/Flash Memory Solution Controller Specification
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PS-1001G/PS-1011G
S-01005
phison
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8086 microprocessor based project on weight
Abstract: three phase bridge inverter 8051 project on traffic light controller arm9 drive PWM servo motor project paper PLC ELEVATOR CONTROL ELEVATOR LOGIC CONTROL PLC microcontroller 1 phase pure sine wave inverter bi-directional switches IGBT 80C196 instruction set 80C196 users manual
Text: Insider Guide V 1.0 The INSIDER GUIDE to Planning XC166 Family Designs An Engineers Introduction to the XC166 Family Microcontrollers February 2006 An Insiders Guide to Planning XC166 Family Designs Copyright Hitex UK Ltd. 19/12/2005 Edition 2006-02-22
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XC166
XC167CI
P-TQFP-144
XC167CI
8086 microprocessor based project on weight
three phase bridge inverter
8051 project on traffic light controller
arm9 drive PWM servo motor project paper
PLC ELEVATOR CONTROL
ELEVATOR LOGIC CONTROL PLC
microcontroller 1 phase pure sine wave inverter
bi-directional switches IGBT
80C196 instruction set
80C196 users manual
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pic microcontroller family ptf
Abstract: epoch stepper motor motorola bts hm1 MPC8260 MSC8101 SC100 SC140 Samsung t-dmb module samsung t-dmb soc 8Mb samsung SDRAM
Text: MSC8101 USER’S GUIDE 16-Bit Digital Signal Processor MSC8101UG/D Revision 1, June 2001 EOnCE is a registered trademark of Motorola, Inc. StarCore, PowerQUICC II, Motorola, and the Motorola logo are trademarks of Motorola, Inc. The PowerPC name is a trademark of International Business Machines Corporation used by Motorola under license
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MSC8101
16-Bit
MSC8101UG/D
HDI16
Index-12
pic microcontroller family ptf
epoch stepper motor
motorola bts hm1
MPC8260
SC100
SC140
Samsung t-dmb module
samsung t-dmb soc
8Mb samsung SDRAM
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samsung pram
Abstract: No abstract text available
Text: PRAM MODULE / _16 Mega Byte 77 KMM5364000C/CG Fast Page Mode 4Mx36 DRAM SIMM Using 4Mx1 DRAM, 5V ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5364000C is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364000C consists of thirty six CMOS
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KMM5364000C/CG
4Mx36
KMM5364000C
110ns
130ns
150ns
samsung pram
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DG113
Abstract: Samsung Capacitor sse samsung pram
Text: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7
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KM41V4000LL
KM41V4000LL
130ns
150ns
180ns
304x1
KM41V4000/L
DG113
Samsung Capacitor sse
samsung pram
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KM41C1000B-8
Abstract: KM41C1000B
Text: SAMSUNG ELECTRONICS INC 4SE D • 7 ^ 4 1 4 2 0G10022 5 KM41C1000B CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: two • • • • • • • • • tcAQ The Samsung KM41C1000B is a CMOS high speed
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0G10022
KM41C1000B
KM41C1000B-6
110ns
KM41C1000B-7
130ns
KM41C1000B-8
KM41C1000B-10
KM41C1000B
576x1
KM41C1000B-8
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samsung pram
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC 4EE D • 7 ^ 4 1 4 2 OQlGlññ b » S H Û K KM41C4002 CMOS DRAM 4 M X I Bit CMOS Dynamic RAM with Static Column M od e'" FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
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KM41C4002
150ns
100ns
180ns
GD10203
T-46-23-15
20-LEAD
samsung pram
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Untitled
Abstract: No abstract text available
Text: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM466F20 1 3BS-L is a 2M bit x
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KMM466F203BS-L
KMM466F213BS-L
KMM466F203BS-L
KMM466F213BS-L
2Mx64
KMM466F20
28-pin
300mil
144-pin
466F203BS-L
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Untitled
Abstract: No abstract text available
Text: KM49C512A/AL/ALL CMOS DRAM 512Kx9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM49C512A/AL/ALL is a CMOS high speed 524,288 bit x 9 Dynamic Random Access Memory. Its design is optimized for high performance applica
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KM49C512A/AL/ALL
512Kx9
KM49C512A/A
KM49C512A/AL/ALL-7
KM49C512A/AL/ALL-8
110ns
130ns
150ns
KM49C512A/AL/ALL
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KMM332F124BT-L6
Abstract: CS5-02
Text: Preliminary KMM332F104BT-L KMM332F124BT-L DRAM MODULE KMM332F104BT-L & KMM332F124BT-L Fast Page with EDO Mode 1Mx32 DRAM DIMM, 1Mx16, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL FEATURES DESCRIPTION The Samsung KMM332F10 2 4BT is a 1M bit x 32 Dynamic RAM high density memory module. The
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KMM332F104BT-L
KMM332F124BT-L
KMM332F104BT-L
KMM332F124BT-L
1Mx32
1Mx16,
KMM332F104BT-L6/L7
cycles/128ms
60/70ns)
KMM332F124BT-L6/L7
KMM332F124BT-L6
CS5-02
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KM44C1002
Abstract: KM44C1002-8
Text: CMOS DRAM KM44C1002 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1002
200jjs
20-LEAD
KM44C1002
KM44C1002-8
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samsung pram
Abstract: t03h 256KX4 KM44C256BL KM44C256BL-10 Scans-0014168 T462
Text: SA M S U N G E L E C T R O N I C S 42E INC D B TTbMm a 00100=13 KM44C256BL T B 1 S I1 6 K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page .Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44G256BL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its de
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KM44C256BL
HSF16K
256KX4
KM44C256BL-
130ns
150ns
KM44C256BL-10
100ns
180ns
samsung pram
t03h
KM44C256BL
Scans-0014168
T462
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KM41C1001BP
Abstract: No abstract text available
Text: i+2E D S A M S U N G E L E C T R O N I C S INC • 7^4142 KM41C10Ö1B GGIOOSO T ■ SflGK CMOS DRAM 1 M X 1 B it C M O S D y n a m ic R A M w ith N ib b le M o d e ‘I _ ' T ' tt b - Z 5 .- r 5 FEA TU RES GEN ERAL DESCRIPTION • Performance range: The Samsung KM41C1001B is a CMOS high speed
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KM41C10Ã
KM41C1001B
KM41C1001B-
110ns
130ns
150ns
KM41C1001B-10
KM41C1001B
KM41C1001BP
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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km44c16000
Abstract: No abstract text available
Text: KM44C16000B, KM44C161OOB CMOS PRAM 16Mx 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref , access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional fea
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KM44C16000B,
KM44C161OOB
16Mx4
KM44C16000B
KM44C16100S
km44c16000
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Untitled
Abstract: No abstract text available
Text: KM48C514P, KM48V514D CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM48C514P,
KM48V514D
512Kx8
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