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    SAMSUNG OS APPLICATION NOTE Search Results

    SAMSUNG OS APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    SAMSUNG OS APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S3C2412

    Abstract: S3C2412X Samsung s3c2412 sc32442 S3C2442 SC32442A ARM926EJS ISO-14001 SC3244
    Text: S3C2412X 32-BIT CMOS MICROCONTROLLER Application Note - Power Design Guide Revision 1.0 i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no


    Original     		PDF S3C2412X 32-BIT 266MHz 266MHz. NZO75NN 10msec. S3C2412 S3C2412X Samsung s3c2412 sc32442 S3C2442 SC32442A ARM926EJS ISO-14001 SC3244

    s3c2413

    Abstract: S3C2412 S3C2442 sc32442 SC32442A ARM926EJS ISO-14001 S3C2413X arm 2148 samsung power supply schematic
    Text: S3C2413X 32-BIT CMOS MICROCONTROLLER Application Note - Power Design Guide Revision 1.0 i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no


    Original     		PDF S3C2413X 32-BIT 266MHz 266MHz. NZO75NN 10msec. s3c2413 S3C2412 S3C2442 sc32442 SC32442A ARM926EJS ISO-14001 S3C2413X arm 2148 samsung power supply schematic

    samsung arm920t s3c2440a 300 400mhz

    Abstract: S3C2440 s3c2440 arm S3C2440 application note samsung s3c2440 arm920t core samsung s3c2440 arm920t S3C2440A ARM S3C2440 Samsung S3C2440 reference design s3c2440A ARM920T
    Text: S3C2440A 32-BIT CMOS MICROCONTROLLER Application Note - Power Design Guide Revision 1.0 i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no


    Original     		PDF S3C2440A 32-BIT PPC2003 300MHz, 400MHz. KYC13AA 10msec. 270uA 300MHz samsung arm920t s3c2440a 300 400mhz S3C2440 s3c2440 arm S3C2440 application note samsung s3c2440 arm920t core samsung s3c2440 arm920t S3C2440A ARM S3C2440 Samsung S3C2440 reference design s3c2440A ARM920T

    sc32442

    Abstract: schematic Samsung lcd power supply unit Samsung SC32442 S3C2442 ARM samsung sc32442B SC32442A SC32442B ARM920T ISO-14001 PPC2003
    Text: SC32442B 32-BIT CMOS MICROCONTROLLER Application Note - Power Design Guide Revision 1.2 i Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no


    Original     		PDF SC32442B 32-BIT 104mW 127mW SC32442 50MHz sc32442 schematic Samsung lcd power supply unit Samsung SC32442 S3C2442 ARM samsung sc32442B SC32442A SC32442B ARM920T ISO-14001 PPC2003

    samsung toggle mode NAND

    Abstract: s3c2450 SMDK2450 Samsung EMMC "boot mode" movinand S3C64 samsung emmc boot Samsung eMMC irom application note s3c245
    Text: Application Note Internal ROM Booting S3C2450/51/16X RISC Microprocessor Oct 16, 2008 Preliminary REV 0.041 Preliminary product information describe products that are in development, for which full characterization data and associated errata are not yet available.


    Original     		PDF S3C2450/51/16X SMDK2450/51/16 samsung toggle mode NAND s3c2450 SMDK2450 Samsung EMMC "boot mode" movinand S3C64 samsung emmc boot Samsung eMMC irom application note s3c245

    samsung tfs4

    Abstract: 39TB TFS4 Samsung "Flash "
    Text: TFS4 CONFIGURING CLUSTER SIZE Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.


    Original     		PDF November-2006, 128KB 256KB samsung tfs4 39TB TFS4 Samsung "Flash "

    samsung tfs4

    Abstract: BML STL SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER tfs4_format FAT12 FAT16 FAT32 TFS4
    Text: TFS4 INITIALIZATION PROCESS Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.


    Original     		PDF November-2006, samsung tfs4 BML STL SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER tfs4_format FAT12 FAT16 FAT32 TFS4

    s3c2450

    Abstract: samsung EMMC user guide Samsung board Board design guide eMMC SAMSUNG emmc samsung emmc boot movinand irom application note iNAND eMMC 4 41 emmc spec SAMSUNG moviNAND
    Text: Application Note Internal ROM Booting S3C2450X RISC Microprocessor June 25, 2008 Preliminary REV 0.03 Preliminary product information describe products that are in development, for which full characterization data and associated errata are not yet available.


    Original     		PDF S3C2450X SMDK2450 s3c2450 samsung EMMC user guide Samsung board Board design guide eMMC SAMSUNG emmc samsung emmc boot movinand irom application note iNAND eMMC 4 41 emmc spec SAMSUNG moviNAND

    ternary content addressable memory VHDL

    Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
    Text: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V


    Original     		PDF STDL150 STDL150 13nW/MHz ARM920T/ARM940T, ternary content addressable memory VHDL ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge

    ARM9TDMI

    Abstract: ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung
    Text: V S MSUNG STDH150 ELECTRONICS STDH150 Standard Cell 0.13um System-On-Chip ASIC Dec 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 34.3 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		PDF STDH150 STDH150 ARM920T/ARM940T, ARM9TDMI ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung

    ARM dual port SRAM compiler

    Abstract: DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ
    Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		PDF STD150 STD150 ARM920T/ARM940T, ARM dual port SRAM compiler DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ

    ARM1020E

    Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
    Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/MHz@1.2V, 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		PDF STD150 STD150 ARM920T/ARM940T, ARM1020E samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T

    SAMSUNG HD502HJ

    Abstract: samsung hm502jx HD103SJ hd502hj samsung hm500ji Samsung SpinPoint HD103SJ HM502JX HM252HX HM500JI HD103SI
    Text: s S We provide the most reliable storage solution www.samsunghdd.com Spinpoint is a trademark of Samsung Electronics Co., Ltd. All brand and product names are trademarks of their respective companies. Design and specification are subject to change without notice. ⓒ 2010 Samsung Electronics Co., Ltd


    Original     		PDF

    CLK180

    Abstract: DDR400 XAPP262 XC2V1000 SRAM controller SIGNAL PATH designer QDR pcb layout
    Text: Application Note: Virtex-II Series R Synthesizable QDR SRAM Controller Author: Olivier Despaux XAPP262 v2.3 October 23, 2002 Summary Quad Data Rate (QDR ) Synchronous Static RAM (SRAM) is one of the highest bandwidth solutions available for networking and telecommunications applications. This low-cost, highperformance solution is ideal for applications requiring memory buffering, traffic management,


    Original     		PDF XAPP262 DDR400) CLK180 DDR400 XAPP262 XC2V1000 SRAM controller SIGNAL PATH designer QDR pcb layout

    HY27UU088G5M

    Abstract: HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08
    Text: ST72681 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		PDF ST72681 512-byte 12MB/s ST72681/R12 ST72681 HY27UU088G5M HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08

    HY27UU088G5M

    Abstract: HY27UT084G2M 29f8g08 29F2G08 HY27UG084G2M HY27UH088G2M TH58NVG*D hy27ug082g2m Micron 29F4G08BA HY27UU088
    Text: ST72681 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		PDF ST72681 512-byte 12MB/s HY27UU088G5M HY27UT084G2M 29f8g08 29F2G08 HY27UG084G2M HY27UH088G2M TH58NVG*D hy27ug082g2m Micron 29F4G08BA HY27UU088

    XSR Porting Guide

    Abstract: BML STL samsung s3c2440 user manual SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND FLASH TRANSLATION LAYER FTL NAND XSR EPOC32 xsr v1.6.1 Extended Sector Remapper onenand xsr
    Text: UniStore II v1.5.1 Installation Guide JUN-22-2006, Version 3.4 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks UniStore II is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer


    Original     		PDF JUN-22-2006, 364bytes 512bytes 364bytes, 2000bytes, 512byte XSR Porting Guide BML STL samsung s3c2440 user manual SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND FLASH TRANSLATION LAYER FTL NAND XSR EPOC32 xsr v1.6.1 Extended Sector Remapper onenand xsr

    HY27UU088G5M

    Abstract: HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48 HY27UU088G5M HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu

    Untitled

    Abstract: No abstract text available
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48

    mmc_write

    Abstract: onenand xsr SAMSUNG NAND FTL KFAT XSR Porting Guide SAMSUNG NAND FLASH TRANSLATION LAYER samsung xsr abstract fore system m.a hindi K9K2G16U0M
    Text: TFS4 Porting Guide 2007.08.16 , Version 1.4.2 Note TFS4 is independent of XSR. Here we assume that XSR or MMC or HSMMC host device driver is already ported to your target system. This TFS4 porting guide covers only TFS4 porting procedure, neither XSR nor MMC(or HSMMC) host device driver.


    Original     		PDF

    toshiba MLC nand flash

    Abstract: toshiba NAND Flash MLC AN2711 NAND Flash MLC NOR Flash intel nand flash NAND slc Nand intel IMX 145 NAND Reliability note
    Text: Freescale Semiconductor Application Note AN2711/D Rev. 0, 10/2004 Flash Architectures for i.MX Applications Processors by: Florent Auger 1 Abstract The purpose of this document is to briefly describe the differences of Flash memory available on the market and


    Original     		PDF AN2711/D toshiba MLC nand flash toshiba NAND Flash MLC AN2711 NAND Flash MLC NOR Flash intel nand flash NAND slc Nand intel IMX 145 NAND Reliability note

    A3PE600-FG484

    Abstract: A3PE3000L FG484 K7R643684M KTR643684M circuit diagram of ddr ram Signal path designer
    Text: Application Note AC311 Physical Interface to QDRII Memories using Actel ProASIC 3E FPGAS Introduction Quad Data Rate QDR memories are a family of memory products defined and developed by the QDR Consortium comprised of Cypress, Hitachi, IDT, Micron, NEC, and Samsung. QDR memories have been


    Original     		PDF AC311 A3PE600-FG484 A3PE3000L FG484 K7R643684M KTR643684M circuit diagram of ddr ram Signal path designer

    HY27Uu088G5m

    Abstract: HY27UT084G2M 29f8g08 29F2G08 HY27UT0 HY27UU08 NDK America HY27UG084G2M HY27UT08 TH58NVG*D
    Text: ST72682 USB 2.0 high-speed Flash drive controller Not For New Design Features • ■ USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY – Supports USB high speed and full speed – Suspend and Resume operations LQFP64 10x10


    Original     		PDF ST72682 LQFP64 10x10 512-byte HY27Uu088G5m HY27UT084G2M 29f8g08 29F2G08 HY27UT0 HY27UU08 NDK America HY27UG084G2M HY27UT08 TH58NVG*D

    km62256alg

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC _ 4 SE I> T ^ b Ml Mg D D lD 7 fl fl ÜHSNGK CMOS SRAM KM62256ÄLPI/KM62256ALGI : - : 3 2 K X 8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range: - 4 0 to 8 5 °C


    OCR Scan     		PDF KM62256Ã LPI/KM62256ALGI 62256ALPI; 28-pin 62256ALGI: 28-pln km62256alg