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    SAMSUNG NOR FLASH QUALIFICATION REPORT Search Results

    SAMSUNG NOR FLASH QUALIFICATION REPORT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC Flash, 256KX8, 90ns, CDIP32, CERDIP-32 Visit Rochester Electronics LLC Buy
    AM188EM-25KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-40KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-33KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy

    SAMSUNG NOR FLASH QUALIFICATION REPORT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG NOR Flash Qualification Report

    Abstract: BGA48 M29W008A QRMS9901 LGA-48
    Text: QRMS9901 QUALIFICATION REPORT M36W108A T6X-U35: 8 Mbit x8 Flash Memory and 1 Mbit (x8) SRAM Multiple Memory INTRODUCTION The M36W108A is a Multiple Memory device contains an 8 Mbit (3V) Flash memory and a 1 Mbit SRAM, both organized by 8 bits. The two components are distinguishable by use of the three chip enable lines,


    Original     		PDF QRMS9901 M36W108A T6X-U35: M29W008A T6X-U35 SAMSUNG NOR Flash Qualification Report BGA48 QRMS9901 LGA-48

    SAMSUNG NAND FLASH TRANSLATION LAYER

    Abstract: SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl
    Text: APPLICATION NOTE for NAND Flash Memory Revision 2.0 Memory Product & Technology Division 1999. 12. 28 Product Planning & Application Engineering The Leader in Memory Technology 1 ELECTRONICS TABLE OF CONTENTS ¡ áINTRODUCTION 5. UTILIZING THE DEVICE IN THE


    Original     		PDF 128Mb 256Mb) 256Mb 512Mb 500us SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl

    SAMSUNG NAND Flash Qualification Report

    Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor

    K9F1208U0C-PCB0

    Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C o824KB K9F1208U0C-FIB00 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB0T K9F1208U0C-PCB0 marking date code samsung semiconductor K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T

    SAMSUNG NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report

    K9F1208R0C-JIB0

    Abstract: K9F1208U0C K9F1208U0C-PCB0 K9F1208R0C-JIB K9F1208R0C K9F1208R0C-JIB00 SAMSUNG NOR Flash Qualification Report
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208R0C-JIB0T 824KB K9F1208R0C-JIB00 K9F1208R0C-JIB0T K9F1208R0C-JIB0 K9F1208U0C-PCB0 K9F1208R0C-JIB SAMSUNG NOR Flash Qualification Report

    K9F1208U0C-PCB

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PCB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB

    RCD 1230 SAMSUNG

    Abstract: ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37
    Text: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. V CC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~ 2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512/OneNAND1GDDP 512Mb KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB KFH1G16Q2M-DEB KFH1G16D2M-DEB KFH1G16U2M-DIB 63FBGA RCD 1230 SAMSUNG ST OneNAND samsung confidential samsung nor flash Flash Memory SAMSUNG OneNAND SAMSUNG NAND Qualification BLOCK37

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR
    Text: Preliminary MCP MEMORY KAE00C400M Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 64M Bit (4Mx16) UtRAM *2 Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 29, 2002 Preliminary 0.1 Revise - Change UtRAM output load(CL) from 50pF to 80pF


    Original     		PDF KAE00C400M 16Mx8) 4Mx16) 111-Ball SAMSUNG MCP samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


    Original     		PDF KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60

    KFM5616Q1A-DEB6

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 KFM5616Q1A-DEB6

    Samsung 2Gb 3V MLC Nand flash

    Abstract: KFM5616Q1A-DEB5
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Samsung 2Gb 3V MLC Nand flash KFM5616Q1A-DEB5

    512MB NOR FLASH

    Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB5) KFG1216Q2A-DEB5 512Mb 63FBGA KFG1216Q2A-FEB5 63FBGA KFG1216U2A-DIB5 KFG1216U2A-FIB5 512MB NOR FLASH "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH

    OneNAND

    Abstract: SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB6 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 256Mb 67FBGA KFG5616Q1A-PEB6 48TSOP1 KFG5616U1A-DIB6 KFG5616U1A-PIB6 OneNAND SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h

    KFG1216U2A-DIB6

    Abstract: mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand 63FBGA KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB6 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB6) KFG1216Q2A-DEB6 512Mb 63FBGA KFG1216Q2A-FEB6 63FBGA KFG1216U2A-DIB6 KFG1216U2A-FIB6 KFG1216U2A-DIB6 mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended


    Original     		PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6

    F221h

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 F221h

    Toggle DDR NAND flash

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 Toggle DDR NAND flash

    1E49Ah

    Abstract: Samsung nand MLC
    Text: OneNAND256 KFG5616x1A-DEB5 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB5


    Original     		PDF OneNAND256 KFG5616x1A-DEB5) OneNAND256 KFG5616Q1A-DEB5 KFG5616D1A-DEB5 KFG5616U1A-DIB5 67FBGA /48TSOP1 1E49Ah Samsung nand MLC

    KFG1216x2A-xxB5

    Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB5) 512Mb KFG1216Q2A 63FBGA /63FBGA KFG1216D2A KFG1216U2A KFG1216x2A-xxB5 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report KFG1216D2A KFG1216Q2A KFG1216U2A

    Untitled

    Abstract: No abstract text available
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)/63FBGA


    Original     		PDF OneNAND512 KFG1216x2A-xxB6) 512Mb KFG1216Q2A KFG1216D2A KFG1216U2A 63FBGA /63FBGA

    Toggle DDR NAND flash

    Abstract: samsung toggle mode NAND
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		PDF MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Toggle DDR NAND flash samsung toggle mode NAND

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report

    SAMSUNG MCP

    Abstract: MCP Electronics 128M NAND Flash Memory MCP NAND MCP MEMORY 4MX16* sram UtRAM Density NAND FLASH SAMSUNG M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KBC00A6A0M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00A6A0M 8Mx16) 4Mx16) 2Mx16) 512Kx16) 87-Ball 80x12 SAMSUNG MCP MCP Electronics 128M NAND Flash Memory MCP NAND MCP MEMORY 4MX16* sram UtRAM Density NAND FLASH SAMSUNG M/BVS mcp ohm