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    SAMSUNG 2MX32 EDO Search Results

    SAMSUNG 2MX32 EDO Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    7MP4130S20M Renesas Electronics Corporation 2MX32 CMOS SRAM MOD W/ASY Visit Renesas Electronics Corporation
    7MP4130S25M Renesas Electronics Corporation 2MX32 CMOS SRAM MOD W/ASY Visit Renesas Electronics Corporation

    SAMSUNG 2MX32 EDO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245 PDF

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16 PDF

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


    Original     		PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620 PDF

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723 PDF

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 PDF

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    1MX16

    Abstract: KMM5322204C2W KMM5322204C2WG
    Text: DRAM MODULE KMM5322204C2W/C2WG 2Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5322204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322204CW/CWG to KMM5322204C2W/C2WG caused by PCB revision .


    Original     		KMM5322204C2W/C2WG 2Mx32 1MX16 KMM5322204CW/CWG KMM5322204C2W/C2WG 1Mx16 KMM5322204C2W KMM5322204C2WG PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S64323LF-S D N/U/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.3 June 2002 Rev. 1.3 June 2002 K4S64323LF-S(D)N/U/P CMOS SDRAM Revision History Revision 0.0 (Feb. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die datasheet. (VDD 2.5V, VDDQ 1.8V & 2.5V).


    Original     		K4S64323LF-S 2Mx32 90FBGA 100MHz, 32Bit PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322104BKU consists of four CMOS


    OCR Scan     		KMM5322104BKU/BKUG KMM5322104BKU/BKUG 2Mx32 KMM5322104BKU 28-pin 72-pin KMM5322104BKU PDF

    CS5-02

    Abstract: No abstract text available
    Text: KMM332F204AT-L KMM332F224AT-L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V DESCRIPTIO N FEATURES The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332F204AT-L KMM332F224AT-L KMM332F224AT-L 2Mx32 KMM332F204AT-L6/L7 cycles/128ms 60/70ns) KMM332F224AT-L6/L7 CS5-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332F204BT-L KMM332F224BT-L DRAM MODULE KMM332F204BT-L / KMM332F224BT-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL FEATURES DESCRIPTION The Samsung KMM332F20 2 4BT is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332F204BT-L KMM332F224BT-L KMM332F204BT-L KMM332F224BT-L 2Mx32 KMM332F20 1Mx16bit 44-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L Fast Page Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332V204BT-L KMM332V224BT-L KMM332V224BT-L 2Mx32 KMM332V20 KMM332V204BT-L6/L7 cycles/128ms 60/70ns) PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332F204AT-L KMM332F224AT KMM332F204AT-L KMM332F224AT-L 2Mx32 KMM332F20 1Mx16bit 44-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V G EN ER AL FEATURES DESCRIPTIO N The Samsung KMM332F20 1 3BS is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM332F203BS-L KMM332F213BS-L KMM332F213BS-L 2Mx32 KMM332F20 28-pin 72-pin PDF

    KM48V2104BS-L

    Abstract: km48v2104bs
    Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2M bit x 32 D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM332F203BS-L KMM332F213BS-L KMM332F203BS-L KMM332F213BS-L 2Mx32 KMM332F20 72-pin 332F20 KM48V2104BS-L km48v2104bs PDF

    km416c1204aj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5322204AW/AWG KMM5322204AW/AWG 2Mx32 1Mx16 KMM5322204AW KMM5322204AW cycles/16ms 5322204AW 1Mx16bit 42-pin km416c1204aj PDF

    Samsung 2MX32 EDO

    Abstract: Samsung 2MX32 EDO simm module
    Text: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESC RIPTIO N FEATURES • Part Identification The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan     		KMM5322104BKU/BKUG KMM5322104BKU/BKUG 2Mx32 KMM5322104BKU 28-pin 72-pin KMM5322104BKU Samsung 2MX32 EDO Samsung 2MX32 EDO simm module PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L Fast Page Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M bit x 32 Dynam ic RAM high density m em ory module. The


    OCR Scan     		KMM332V204BT-L KMM332V224BT-L KMM332V204BT-L KMM332V224BT-L 2Mx32 KMM332V204BT-L6/L7 cycles/128ms 60/70ns) KMM332V224BT-L6/L7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204BW is a 2M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5322204BW/BWG KMM5322204BW/BWG 2Mx32 1Mx16 KMM5322204BW KMM5322204BW( cycles/16ms 5322204BW PDF

    416V1204

    Abstract: KMM332F224BT-L6
    Text: Preliminary KMM332F204BT-L KMM332F224BT-L ORAM MODULE KMM332F204BT-L / KMM332F224BT-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, Low P o w er, 4K & 1K Refresh, 3.3V GENERAL FEATURES D E S C R IP T IO N The Samsung KM M 332F20 2 4BT is a 2M bit X 32 Dynam ic RAM high density m em ory module. The


    OCR Scan     		KMM332F204BT-L KMM332F224BT-L KMM332F224BT-L 2Mx32 KMM332F204BT-L6/L7 cycles/128ms 60/70ns) KMM332F224BT-L6/L7 416V1204 KMM332F224BT-L6 PDF

    samsung kmm5322204aw

    Abstract: km416c1204aj kmm5322204aw MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung
    Text: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynamic RAM high density m em ory m odule. The


    OCR Scan     		KMM5322204AW/AWG KMM5322204AW/AWG 2Mx32 1Mx16 KMM5322204AW 1Mx16bit 42-pin 72-pin samsung kmm5322204aw km416c1204aj MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference PDF