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    SAMSUNG 2GB X 8 BIT NAND FLASH MEMORY Search Results

    SAMSUNG 2GB X 8 BIT NAND FLASH MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy

    SAMSUNG 2GB X 8 BIT NAND FLASH MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    samsung 1Gb nand flash

    Abstract: samsung 2GB Nand flash 128M NAND Flash Memory 512M x 8 Bit NAND Flash Memory K9K1G08U0M-YCB0 SAMSUNG NAND FLASH "NAND Flash" 8 port NAND flash memory SRAM 134,217,728 x 4 K9K1G08U0M
    Text: 新亞電子科技有限公司 SemiRim Limited. 01A, 4/F, 8 Tai Chung Road 香港荃灣大涌道 8 號 TW, NT 4 樓 01A 室 Tel: 852 2405.0798 Fax: (852) 2490.1898 Email: sales@semirim.com Website: www@semirim.com


    Original     		PDF K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 K9K1G08U0M 52tection samsung 1Gb nand flash samsung 2GB Nand flash 128M NAND Flash Memory 512M x 8 Bit NAND Flash Memory K9K1G08U0M-YCB0 SAMSUNG NAND FLASH "NAND Flash" 8 port NAND flash memory SRAM 134,217,728 x 4

    phison

    Abstract: Phison Electronics LGA-52 hynix nand flash 1.8v 4Gb uP8051 spi hynix nand flash 2gb LGA52 hynix nand 512M 8GB MODULE MLC phison nand flash
    Text: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3-5833899-3001 or 1001 or 1005 Fax： 886-3-5833666 Email：Sales@phison.com Phison Electronics Corporation version 1.1 All rights are strictly reserved. Any portion of this paper shall not be reproduced, copied, or


    Original     		PDF S-05007 phison Phison Electronics LGA-52 hynix nand flash 1.8v 4Gb uP8051 spi hynix nand flash 2gb LGA52 hynix nand 512M 8GB MODULE MLC phison nand flash

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    s3c2442

    Abstract: sc32442 Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash
    Text: Samsung SC32442 MSP Multi Stacked Package Leading-Edge Application Processor with single package incorporating Memory MCP Product Brief SC32442 MSP product is a proprietary solution provided exclusively by Samsung Electronics. SC32442 includes an S3C2442 AP


    Original     		PDF SC32442 S3C2442 ARM920T 512Mb 128MB Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash

    K9F4G08 512MB NAND Flash

    Abstract: Samsung k9f1208 K9F1G08 hard disk ATA pcb schematic K9F4G08 SAMSUNG NAND FLASH K9F1G08 K9F1208 k9f2g08 SAMSUNG NAND FLASH K9F5608 samsung nand flash
    Text: S3F49FAX FLASH Controllers for Compact Flash / PC Card / IDE Disk REFERENCE GUIDE MANUAL HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) REFERENCE GUIDE MANUAL S3F49FAX Table of Contents 1.1


    Original     		PDF S3F49FAX S3F49FAX K9F4G08 512MB NAND Flash Samsung k9f1208 K9F1G08 hard disk ATA pcb schematic K9F4G08 SAMSUNG NAND FLASH K9F1G08 K9F1208 k9f2g08 SAMSUNG NAND FLASH K9F5608 samsung nand flash

    1GB SD CARD

    Abstract: phison samsung sd card SD FLASH 2GB
    Text: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3-5833899-3001 or 1001 or 1005 Fax： 886-3-5833666 Email：Sales@phison.com Phison Electronics Corporation PS8003 Controller Specification For SD Card Revision 1.2


    Original     		PDF PS8003 S-07056 1GB SD CARD phison samsung sd card SD FLASH 2GB

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    1584B

    Abstract: 128KB 1e49ch Block1020 2816 memory 2Kb Samsung nand flash 2GB MLC 00FFH F000H 2kb 10072h 0229H
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFM1G16Q2A KFN2G16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFM1G16Q2A KFN2G16Q2A 1584B 128KB 1e49ch Block1020 2816 memory 2Kb Samsung nand flash 2GB MLC 00FFH F000H 2kb 10072h 0229H

    Hynix 16Gb Nand flash

    Abstract: phison ps8005 v 24 /TLCS-900/Toshiba MLC flash
    Text: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3-5833899-3001 or 1001 or 1005 Fax： 886-3-5833666 Email：Sales@phison.com Phison Electronics Corporation PS8005 Controller Specification For SD Card version1. 7


    Original     		PDF PS8005 S-07052 Hynix 16Gb Nand flash phison v 24 /TLCS-900/Toshiba MLC flash

    SAMSUNG moviNAND

    Abstract: MOVINAND 8GB movinand EXT_CSD KMCEN0000M KMCEN0000 K9G8G08U0M KMCEN0000M-S998000 K9G8g08 Samsung 8Gb MLC Nand flash
    Text: KMCEN0000M-S998000 4GB moviNAND_8Gb MLC Based SAMSUNG moviNANDTM KMCEN0000M (4GB MLC) Product Data Sheet Version 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KMCEN0000M-S998000 KMCEN0000M KMCEN0000M, SAMSUNG moviNAND MOVINAND 8GB movinand EXT_CSD KMCEN0000M KMCEN0000 K9G8G08U0M KMCEN0000M-S998000 K9G8g08 Samsung 8Gb MLC Nand flash

    K9F1G08U0C

    Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
    Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1G08B0C K9F1G08U0C K9F1G08X0C K9F1G08U0C K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report

    s3c6410x

    Abstract: S3C6410 s3c6410 external interrupt s3c6410 arm1176JZF datasheet samsung S3C6410 s3c6410 datasheet Samsung S3C6410 ARM S3C6410X5D S3C6430 oneDRAM
    Text: y inaarry imin PPrreelilm Product Technical Brief S3C6410 July 2008 Overview S3C6410 is a 16/32-bit RISC cost-effective, low power, high performance micro-processor solution for mobile phones, Portable Navigation Devices and other general applications. To provide optimized H/W performance for the


    Original     		PDF S3C6410 S3C6410 16/32-bit 64/32-bit 424-pins S3C6410X5A 491-pins 533MHz 667MHz s3c6410x s3c6410 external interrupt s3c6410 arm1176JZF datasheet samsung S3C6410 s3c6410 datasheet Samsung S3C6410 ARM S3C6410X5D S3C6430 oneDRAM

    K9F2G08U0B

    Abstract: K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B K9F2G08B0B-P
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B K9F2G08U0B-P K9F2G08X0B K9F2G08U0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report samsung k9f2g08U0b K9F2G08 K9F2G08B0B-P

    K9F2G08U0B-PCB0

    Abstract: K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B-PCB0 K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    63FBGA

    Abstract: KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 63FBGA KFN2G16Q2M-DEB5 80x11 KFG1G16Q2M) KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5

    samsung 2GB Nand flash 121 pins

    Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA samsung 2GB Nand flash 121 pins samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash

    Flash Memory datasheet mmc

    Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 63FBGA KFN2G16Q2M-DEB5 80x11 KFG1G16Q2M) Flash Memory datasheet mmc TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 KFM1G16Q2M-DEB5

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand