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    32 inch TV samsung lcd Schematic

    Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A


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    PDF 965PM BA41-0071 BA41-00717A BA41-00718A TP18631 TP18634 TP18650 TP18635 TP18636 32 inch TV samsung lcd Schematic U574 27b1 diode AP4435 22B2 DIODE 58c3 SLB9635TT1.2

    TP2788

    Abstract: TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


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    PDF BA41-00844A BA41-00845A TP2074 TP2075 TP2076 TP2077 TP2735 TP2736 TP2737 TP2754 TP2788 TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode

    TP2801

    Abstract: smd diode PG 303 ALC287 Q5 LED mx25l8005m2c-15g SS338A 52A3 bluetooth schematic d47 samsung schematic SAMSUNG ELECTRONICS BA41
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION


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    PDF BA41-00774A/00732A TP2740 TP2741 TP2751 TP2750 TP2749 TP2748 TP2747 TP2746 TP2745 TP2801 smd diode PG 303 ALC287 Q5 LED mx25l8005m2c-15g SS338A 52A3 bluetooth schematic d47 samsung schematic SAMSUNG ELECTRONICS BA41

    MSM 7227

    Abstract: S6E63D6 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module
    Text: S6E63D6 Rev.1.10 MOBILE DISPLAY DRIVER IC Property of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S6E63D6 Data Sheet_REV 1.10 Mobile Display Driver IC Trademark & Copyright Information Copyright © 2007-2007 Samsung Electronics Co., Ltd. All Rights Reserved.


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    PDF S6E63D6 S6E63D6 MSM 7227 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module

    cmos bandgap reference 0.35u

    Abstract: 8832M 8309 208M 416M S5N8943B VCXO 35.328MHz capacitor 39n k 63
    Text: S5N8943B G.Lite ADSL Analog Front End IC Preliminary Information Revision 1.0 July 2000 SAMSUNG ELECTRONICS CONFIDENTIAL PROPRIETARY Copyright 1999-2000 Samsung Electronics, Inc. All Rights Reserved S5N8943B G.Lite ADSL Analog Front End IC Contents Page


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    PDF S5N8943B cmos bandgap reference 0.35u 8832M 8309 208M 416M S5N8943B VCXO 35.328MHz capacitor 39n k 63

    8309

    Abstract: 021F 416M S5N8951X S5N8951X01 138-kHz capacitor 39n k 63
    Text: S5N8951X G.dmt ADSL Analog Front End IC Preliminary Information Revision 1.0 July 2000 SAMSUNG ELECTRONICS CONFIDENTIAL PROPRIETARY Copyright 1999-2000 Samsung Electronics, Inc. All Rights Reserved S5N8951X G.dmt ADSL Analog Front End IC Contents Page


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    PDF S5N8951X 8309 021F 416M S5N8951X S5N8951X01 138-kHz capacitor 39n k 63

    samsung CMOS image sensor

    Abstract: cmos image sensor 31.76 S5K* CMOS structure samsung smia 65 camera module 26-20D S5K2
    Text: S5K2E1FX03 – 1/2.5 INCH QSXGA CMOS IMAGE SENSOR PRELIMINARY DATA SHEET REV 0.00 S5K2E1FX03_EVT2 (1/2.5” QSXGA CMOS Image Sensor ) Preliminary Data Sheet (Rev 0.00) SAMSUNG ELECTRONICS PROPRIETARY Copyright 2005 Samsung Electronics, Inc. All Rights Reserved


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    PDF S5K2E1FX03 S5K2E1FX03 samsung CMOS image sensor cmos image sensor 31.76 S5K* CMOS structure samsung smia 65 camera module 26-20D S5K2

    1E4H

    Abstract: 1ebh 1FW 43 smd 1FW 43 transistor KS57C3108 1E6H
    Text: KS57C3108 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C3108 single-chip CMOS microcontroller has been designed for very high performance using Samsung’s newest 4-bit CPU core, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-14-digit LCD


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    PDF KS57C3108 KS57C3108 up-to-14-digit 80-pin 1E4H 1ebh 1FW 43 smd 1FW 43 transistor 1E6H

    equivalent PNP for BUZ 90

    Abstract: KS57C5404 KS57P5404 SAM47
    Text: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set KS57C5404/P5404 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C5404 single-chip CMOS microcontroller is designed for high-performance using Samsung’s newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


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    PDF SAM47 KS57C5404/P5404 KS57C5404 SAM47 24-pin 30-PIN equivalent PNP for BUZ 90 KS57P5404

    KS57P2304

    Abstract: KS57C2304 KS57C2302 SAM47 ks57p serial
    Text: KS57C2302/C2304/P2304 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C2302/C2304 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


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    PDF KS57C2302/C2304/P2304 KS57C2302/C2304 SAM47 KS57C2302/C2304 64-pin KS57P2304 KS57C2304 KS57C2302 SAM47 ks57p serial

    ks57c0404

    Abstract: multi frequency multi sound buzzers KS57C0408 KS57P0408 SAM47
    Text: KS57C0404/C0408/P0408 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C0404/C0408 single-chip CMOS microcontroller has been designed for very high-performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


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    PDF KS57C0404/C0408/P0408 KS57C0404/C0408 SAM47 KS57P0408 KS57C0404/C0408. 42-pin 44-pin 40-Pin TB570104A/0108A, ks57c0404 multi frequency multi sound buzzers KS57C0408 SAM47

    ks57c0404

    Abstract: KS57C0408 KS57P0408 SAM47
    Text: KS57C0404/C0408/P0408 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C0404/C0408 single-chip CMOS microcontroller has been designed for very high-performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


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    PDF KS57C0404/C0408/P0408 KS57C0404/C0408 SAM47 KS57P0408 KS57C0404/C0408. 42-pin 44-pin ks57c0404 KS57C0408 SAM47

    1FW 43 smd

    Abstract: 1FW 43 transistor 1FW28 1FW 46 1FW 96 1FW transistor 0004H KS57C2102 BSC23 ksr1
    Text: KS57C2102 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C2102 single-chip CMOS microcontroller is designed for high-performance using Samsung's advanced modular development approach, SAM4 Samsung Arrangeable 4-bit Microcontrollers .Pull-up resistors are


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    PDF KS57C2102 KS57C2102 1FW 43 smd 1FW 43 transistor 1FW28 1FW 46 1FW 96 1FW transistor 0004H BSC23 ksr1

    KFG1G16Q2A

    Abstract: 63FBGA onenand 4GB MLC NAND
    Text: OneNAND1G KFG1G16Q2A-DEBx OneNAND2G(KFH2G16Q2A-DEBx) OneNAND4G(KFW4G16Q2A-DEBx) FLASH MEMORY KFG1G16Q2A KFH2G16Q2A KFW4G16Q2A 1Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    PDF KFG1G16Q2A-DEBx) KFH2G16Q2A-DEBx) KFW4G16Q2A-DEBx) KFG1G16Q2A KFH2G16Q2A KFW4G16Q2A 80x11 KFH2G16Q2A) KFG1G16Q2A 63FBGA onenand 4GB MLC NAND

    memory samsung

    Abstract: No abstract text available
    Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


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    PDF KMM411024/KMM511024 KMM41102 5/KMM511025 KMM411024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 memory samsung

    KM41C1000

    Abstract: KMM591000
    Text: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


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    PDF KMM491000 KMM591000 KM41C1000 20-pin R0286

    KM416C256AJ

    Abstract: KMM532256AW MM5322
    Text: KMM532256AW/WG Fast Page Mode 256KX32 DRAM SIMM Using 256Kx16 DRAM, 5V G E N E R A L D E S C R IP T IO N FEATURES The Samsung K M M 532256AW is a 256K bit x 32 • Performance Range: Dynamic RAM high density memory module. The Samsung K M M 532256A W consists of two C M OS


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    PDF KMM532256AW/WG 256KX32 256Kx16 532256AW 32256A 40-pin 72-pin KMM532256AW KM416C256AJ MM5322

    SMF-24000

    Abstract: No abstract text available
    Text: S M Samsung Microwave Semiconductor F "2 4 0 0 0 -100 -200 P O W O F O p t Ì lY 1 Ì Z C d G aA s FET 2-14 GHz Description Features The SMF-24000 is a 2400 im n-channel MESFET with 0.5 |xm gate length, utilizing Samsung Microwave’s power optimized P5 process. Ti/Pt/Au gate metallization and


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    PDF SMF-24000

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.


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    PDF KM41C4001A 130ns 150ns 180ns DD132DS 18-LEAD 20-LEAD

    PN2222A EQUIVALENT

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPS2222A 14E D 0 0073 06 | 8 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


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    PDF MPS2222A T-29-21 625mW MPS2222 PN2222A EQUIVALENT

    marking M42

    Abstract: KSR1113 KSR2113
    Text: SAMSUNG SEMICONDUCTOR INC KSR2113 14E O I 7*11.4142 G 007133 T PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T- Bias Resistor Built In • Switching circuit, Inverter, interface circuit Driver circuit • Built in bias Reslstor(R,=2.2Kf), R,=47Kfl)


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    PDF KSR2113 KSR1113 OT-23 -100jjA, marking M42 KSR1113 KSR2113

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage


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    PDF MMBR5179 OT-23

    BSC23

    Abstract: fc3h fc1h
    Text: KS57C2102 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2102 single-chip CMOS microcontroller is designed for high-performance using Samsung's advanced modular development approach, SAM4 Samsung Arrangeable 4-bit Microcontrollers .Pull-up resistors are


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    PDF KS57C2102 KS57C2102 BSC23 fc3h fc1h

    96-Seg

    Abstract: No abstract text available
    Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features


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    PDF KS57C2408 KS57C2408 up-to-12-digit 16-bit 80-pin 002b535 71b4142 D0SbS37 96-Seg