pin configuration Bc327
Abstract: BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C
Text: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50
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GG00124
BC307B
O-92-4
BC327
BC327-10
pin configuration Bc327
BC327-16
BC327-25
BC327-40
BC557
BC557A
BC557C
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NTC SD-9
Abstract: R1561 NTC SD-15 PLS4148 S72I MUAB
Text: 199SlSh< — SSVnSSSWS — — T T- 3 3 9 333 3333333333 3 3 333333333 la o rfN P K A V M ia 5 Q Ö Ö O O Ö Ö f l Hr'p,^'‘rtrt^ HrtNfHiN«NNN«NNrtnrtf»nnnonrt'»*-i’f>»i»*f •»¥í'iflíi«fiirtioiíiinifiift'í'í'íií K i n i i h a f t O '-
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19961Sheet
PWA-5024/M
LI2301-LI2315
PWA-S024/M
NTC SD-9
R1561
NTC SD-15
PLS4148
S72I
MUAB
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BCG36
Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
Text: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50
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GG00124
O-92-4
BC307B
BC327
BCG36
bc557
SALJ
TO-92-4pin
BC327-10
to-92-4
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BC557
Abstract: BCG36 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557A BC557B
Text: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCE0 V EB0 'CBO (V) Min (V) Min 00 Min (UA) Max 50
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GG00124
BC307B
O-92-4
BC327
BC327-10
BC557
BCG36
BC327-16
BC327-25
BC327-40
BC557A
BC557B
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SALJ
Abstract: No abstract text available
Text: HITACHI 2SC4501 L /(S) Silicon NPN Epitaxial High Gain Amplifier and Medium Speed Switching Absolute M axim um Ratings (Ta = 25°C) Item S ym bol Rating Unit Collector to base voltage VC8Q 30 V Collector to emitter voltage Vceo 30 V Emitter to base voltage
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2SC4501
SALJ
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74LS783
Abstract: MC6809E MC6847 MC1372 6809e 3.57954 MC1373 data eprom ic M68XX MD7 LC 2716
Text: MC6847 M O T O R O L Non-Interlace A MC6847Y Interlace MC6847/MC6847Y VIDEO DISPLAY GENERATOR VDG T h e v id e o d is p la y g e n e r a to r (V D G ) p ro v id e s a m e a n s o f in te r fa c in g th e M 6 8 0 0 m ic ro p ro c e s s o r fa m ily (o r s im ila r p ro d u c ts ) t o a s ta n d a rd c o l
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MC6847
MC6847Y
MC6847/MC6847Y
M6800
MC1372
MC6847s
74LS783
MC6809E
MC1372
6809e
3.57954
MC1373
data eprom ic
M68XX
MD7 LC 2716
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Untitled
Abstract: No abstract text available
Text: li SAMSUNG E L E C T R O N I C S M2 E INC D • Q 0 1 G 4 CÌ 0 KMM536256B T E ISMGK DRAM MODULES 2 5 6K X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam
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KMM536256B
536256B
20-pin
18-pin
72-pin
130ns
536256B-
150ns
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Untitled
Abstract: No abstract text available
Text: SIEMENS IL2B PHOTOTRANSISTOR OPTOCOUPLER F EATU R ES Package Dimensions in Inches mm • Five CTR Selections fai f3l [?l t • High Collector-Em itter Voltage, BVCEO= 50 V ypm one .246 (6.30) .256(6.50) • No Base Connection • Fieid-Effect Stable by TRansparent lOn
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E52744
Add-X001
23b32fci
0GD727D
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Untitled
Abstract: No abstract text available
Text: t HITACHI 2SD2106 - Silicon NPN Epitaxial Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Hem Symbol Rating Unit Collector to base voltage V CBO 120 V Collector to emitter voltage V CEO 120 V Emitter to base voltage V EBO 7 V Collector current
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2SD2106
O-220F
SD768
2SD21
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Untitled
Abstract: No abstract text available
Text: M ITSU BISHI LSIs M 5 M 4 1 6 1 6 5 C J ,T P - 5 ,- 6 ,- 7 , -5S,-6S,-7S P E E U ' HYPER PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal
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16777216-BIT
1048576-WQRD
16-BIT)
1048576-word
16-bit
DQ31048576-WORD
DQ9-DQ16)
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2SD970
Abstract: 2SD2104
Text: HITACHI 2SD2104-Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C ftem S y m b o l R a tin g U n it C ollector to base voltage V CBO 120 V C o lle cto r to em itter voltage V CEO 120 V E m itter to base voltage
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2SD2104-
O-220FM
2SD2104
2SD970
2SD2104
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2sd2102
Abstract: No abstract text available
Text: HITACHI 2SD2102- -Silicon NPN Triple Diffused Low Frequency Power Amplifier A bsolute M aximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage V CBO 60 V Collector to emitter voltage VC£0 60 V Emitter to base voltage VE0O 7 V
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2SD2102-----
-220F
2SD2102
2sd2102
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bt475 ramdac
Abstract: soh dl6 Bt484/Bt485 82C480 ferrite H5B SCHEMATIC ATI graphics card ITE 8512 bt484 bt485 CHIPS TECHNOLOGIES IDE
Text: CHIPS & TECHNOLOGIES INC 51E D • ZEHflllb 0DD3ÔSM 8 2 C 4 8 1 AST M C H P t-z z -37-* True Color Graphics Accelerator Advance Product Information This Material Copyrighted By Its Respective Manufacturer s CHIPS 8, TECHNOLOGIES INC SIE D scnaiib □□03ass 7^5 «
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03fiSS
T-52-33-45
160-Pin
82C481
bt475 ramdac
soh dl6
Bt484/Bt485
82C480
ferrite H5B
SCHEMATIC ATI graphics card
ITE 8512
bt484
bt485
CHIPS TECHNOLOGIES IDE
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