Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION LOC A 1 REVISIONS DIST ALL RIGHTS RESERVED. COPYRIGHT D 2 3 P DESCRIPTION LTR DATE DWN APVD D A - ELASTÔMERO SAE J200, 2BC 414, A14, B14, C12, E014, F17, Z1 Z1=RESISTÊNCIA RASGO, ASTM D624 - 20kg/cm MIN.
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20kg/cm
-20kg/cm
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crimp contact selection guide
Abstract: m39029
Text: AS39029 A SAE-AS39029 Crimp Contact Selection Guide Military Part Number Glenair Part Number Contact Wire Pin / Socket Size Accommodation BIN Color Striping Product Page M39029/56-348 850-001-22-348 22 22-28 AWG Socket Orange Yellow Grey M39029/56-351 850-001-20-351
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AS39029
SAE-AS39029
M39029/56-348
M39029/56-351
M39029/56-352
M39029/56-353
M39029/56-527
M39029/57-354
M39029/107-621
M39029/107-622
crimp contact selection guide
m39029
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2553PCB
Abstract: BUS-61553 2554-PCB BUS-61554 bus-61555 cpu aeroflex resolver rt RTU A08 61556 BUS 61555
Text: Standard Products CT2553-PCB / 2554-PCB / 2555-PCB / 2556-PCB Advanced Integrated MUX AIM Hybrid for MIL-STD-1553 / SAE-AS15531 in PCB Style July 14, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ CT2553-PCB replaces DDC BUS-61553 CT2554-PCB replaces DDC BUS-61554
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CT2553-PCB
2554-PCB
2555-PCB
2556-PCB
MIL-STD-1553
SAE-AS15531
BUS-61553
CT2554-PCB
BUS-61554
2553PCB
BUS-61553
BUS-61554
bus-61555
cpu aeroflex
resolver rt
RTU A08
61556
BUS 61555
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Hysol C9-4215
Abstract: No abstract text available
Text: Introduction Micro-D Specifications Micro-D Standard Materials and Finishes A B C Connector Shell, Metal D E F G H J K L M Stainless Steel, 300 Series: Plating Code 3: Passivated In Accordance With SAE AMS 2700 Connector Shell, Plastic Liquid crystal polymer, 30% glass-filled or polyphenyl sulfide, 40% glass-filled in
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AMS-QQ-A-250/11:
SAE-AMS-QQ-P-416,
MIL-A-8625
B733-90.
MIL-C-5541
M83513.
EIA-364-27,
MIL-STD-202
MIL-STD-810
Hysol C9-4215
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diode C522
Abstract: A02N-5
Text: 123455657 Enhanced LIN Transceiver 89ABCD9E7 1 RxD 1 EN 2 WAKE 3 TxD 4 Rev.2.x and SAE J2602 1 Baud rate up to 20 kBaud 1 Wide operating voltage range VS = 5 to 27 V 1 Very low standby current consumption of 10µA in sleep mode MLX 80020 1 Bus and local wake up capable with source recognition
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89ABCD9E7
J2602
MLX80020
ISO14001
diode C522
A02N-5
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EBR-1553
Abstract: SAE-AS5652 AS5652 HI-6130 IRIG B decoder 6140 HI-6140 100PQS IRIG 106 IRIG Rev 3
Text: HI-6140 10 MBit/s MIL-STD-1553 / MIL-STD-1760 3.3V BC / MT / RT May 2012 GENERAL DESCRIPTION FEATURES The HI-6140 is a 10 MBit/sec version of Holt’s HI-6130 integrated BC/MT/RT solution. The part is designed for MIL-STD-1553 or MIL-STD-1760 applications using a
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MIL-STD-1553
MIL-STD-1760
EBR-1553
AS5652
10Mbps
DO-254
16-bit
48-bit
IRIG-106
SAE-AS5652
HI-6130
IRIG B decoder
6140
HI-6140
100PQS
IRIG 106
IRIG Rev 3
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BS616LV1625
Abstract: BS616LV1625TC BS616LV1625TI TSOP1-48
Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1625 FEATURES DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current
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BS616LV1625
113mA
115mA
x8/x16
BS61e
R0201-BS616LV1625
-40oC
TSOP1-48
BS616LV1625
BS616LV1625TC
BS616LV1625TI
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BS616LV8023
Abstract: BS616LV8023BC BS616LV8023BI
Text: BSI Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable FEATURES BS616LV8023 DESCRIPTION • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current
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BS616LV8023
100ns
x8/x16
BS616LV8023
-40oC
8x10mm)
R0201-BS616LV8023
BS616LV8023BC
BS616LV8023BI
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a10 bga-9
Abstract: transistors equivalent 0912 BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI
Text: Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI BS616UV1620 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA Max. operating current I- grade : 30mA (Max.) operating current
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BS616UV1620
100ns
x8/x16
BS616UV1620
R0201-BS616UV1620
a10 bga-9
transistors equivalent 0912
BS616UV1620BC
BS616UV1620BI
BS616UV1620FC
BS616UV1620FI
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TSOP1-48
Abstract: BS616LV1622
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable FEATURES BS616LV1622 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin
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BS616LV1622
x8/x16
113mA
115mA
BS616LV1622
-40oC
TSOP1-48
12mmx20mm)
TSOP1-48
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TSOP1-48
Abstract: No abstract text available
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 FEATURES DESCRIPTION • Vcc operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA @55ns operating current I -grade: 46mA (@55ns) operating current
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BS616LV1623
x8/x16
BS616LV1623
lS616LV1623
-40oC
TSOP1-48
12mmx20mm)
TSOP1-48
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TSOP1-48
Abstract: No abstract text available
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1626 FEATURES DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current
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BS616LV1626
113mA
115mA
x8/x16
BS616LV1626
S616LV1626
-40oC
TSOP1-48
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TSOP1-48
Abstract: sae a14 BS616LV1626 BS616LV1626TC BS616LV1626TI
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1626 FEATURES DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current
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BS616LV1626
113mA
115mA
x8/x16
BS616LV1626
-40oC
TSOP1-48
12mmx20mm)
sae a14
BS616LV1626TC
BS616LV1626TI
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BS616UV8021
Abstract: BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC BS616UV8021FI
Text: Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI BS616UV8021 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current
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BS616UV8021
100ns
x8/x16
BS616UV8021
R0201-BS616UV8021
BS616UV8021BC
BS616UV8021BI
BS616UV8021DC
BS616UV8021DI
BS616UV8021FC
BS616UV8021FI
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100PF
Abstract: BS616LV8022 BS616LV8022BC BS616LV8022BI
Text: BSI Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable FEATURES BS616LV8022 DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current
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BS616LV8022
100ns
R0201-BS616LV8022
100uA.
100PF
BS616LV8022
BS616LV8022BC
BS616LV8022BI
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Untitled
Abstract: No abstract text available
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable FEATURES BS616LV1622 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin
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BS616LV1622
113mA
115mA
operationS616LV1622
-40oC
BS616LV1622
TSOP1-48
12mmx20mm)
TSOP1-48
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TSOP1-48
Abstract: BS616LV1621 BS616LV1621TC BS616LV1621TI
Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable FEATURES BS616LV1621 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin
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BS616LV1621
x8/x16
113mA
115mA
R0201-BS616LV1621
-40oC
TSOP1-48
12mmx20mm)
BS616LV1621
BS616LV1621TC
BS616LV1621TI
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TSOP1-48
Abstract: BS616LV1623 BS616LV1623TC BS616LV1623TI
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1623 FEATURES DESCRIPTION • Vcc operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 45mA @55ns operating current I -grade: 46mA (@55ns) operating current
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BS616LV1623
x8/x16
BS616LV1623
-40oC
TSOP1-48
12mmx20mm)
TSOP1-48
R0201-BS616LV1623
BS616LV1623TC
BS616LV1623TI
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BS616LV8025BC
Abstract: 100PF BS616LV8025 BS616LV8025BI
Text: Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI FEATURES BS616LV8025 DESCRIPTION • Very low operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 45mA Max. operating current I-grade : 50mA (Max.) operating current
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BS616LV8025
x8/x16
BS616LV8025
R0201-BS616LV8025
100uA.
BS616LV8025BC
100PF
BS616LV8025BI
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EBR-1553
Abstract: SAE-AS5652 RS485-Bus AS5652 MMSI rta2 DO25 HI-6130 100PQS as565
Text: HI-6140 10 MBit/s MIL-STD-1553 3.3V BC / MT / RT January 2013 GENERAL DESCRIPTION FEATURES The HI-6140 is a 10 MBit/sec version of Holt’s HI-6130 integrated BC/MT/RT solution. The part is designed for MIL-STD-1553-derived protocols that use a 10MB/sec data rate, such as Miniature Munitions Stores Interface
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MIL-STD-1553
EBR-1553
AS5652
10Mbps
DO-254
16-bit
RS-485
AS5652
HI-6140
-40oC
SAE-AS5652
RS485-Bus
MMSI
rta2
DO25
HI-6130
100PQS
as565
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100PF
Abstract: BS616UV8020 BS616UV8020BC BS616UV8020BI
Text: Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI BS616UV8020 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current
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BS616UV8020
100ns
R0201-BS616UV8020
100PF
BS616UV8020
BS616UV8020BC
BS616UV8020BI
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CTM103
Abstract: CTM098 A00W
Text: AirBorn 1 • ROW Strip Connectors Cable to Cable .050" MA-1 2 thru 60 Contacts TERMINATION VIEW — TERMINATION VIEW REC EPTA C LE PLUG — .1 2 5 .0 4 5 .0 7 5 TYP - .0 4 4 DIA THRU TYP © POSITION #1 GUIDE PIN GUIDE HOLE —' OPPOSITE SIDE TERMINATION
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OCR Scan
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-141-005-225-A
-A68W
MA-141
-A67W
CTM101
M--20
CTM103
CTM098
A00W
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Untitled
Abstract: No abstract text available
Text: AirBorn MA-131 -01 0 -1 6 1 -A69WQ 1 • ROW Strip Connectors Cable to Cable .050" MA-141 -0 1 0 -2 6 1 -A72WQ MA-1 2 thru 60 Contacts TERMINATION VIEW PLUG — .125 .045 .0 7 5 TYP .0 4 4 DIA THRU TYP TERMINATION VIEW POSITION #1 GUIDE PIN .200 TERMINATION
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MA-131
-A69WQ
MA-141
-A72WQ
M83513,
CTMA003
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WF512K8-XCXB
Abstract: WF256K8
Text: UH ITE M ICRO ELECTRO N ICS 5V FLASH MODULE PRELIMINARY WF256K8, WF512K8-XCX5 * FEATURES • Access Tim es of 60, 70, 90 and 150nS ■ 5 V o lt Programm ing; 5V ±10% Supply ■ 32 pin Ceram ic DIP, JEDEC approved Package 300 ■ Low Power CM OS ■ Organized as 256K x 8 and 512K x 8
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WF256K8,
WF512K8-XCX5
150nS
RetenWF512K8-XCX5
WF512K8-XCXB
WF256K8
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