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    BS616UV8020BI Search Results

    BS616UV8020BI Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BS616UV8020BI Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 512K x 16 or 1024K x 8 bit switchable Original PDF
    BS616UV8020BI Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable Original PDF
    BS616UV8020BI-10 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable Original PDF
    BS616UV8020BI-70 Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable Original PDF

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    100PF

    Abstract: BS616UV8020 BS616UV8020BC BS616UV8020BI
    Text: Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI BS616UV8020 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current


    Original     		PDF BS616UV8020 100ns R0201-BS616UV8020 100PF BS616UV8020 BS616UV8020BC BS616UV8020BI