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    SABER RELAY Search Results

    SABER RELAY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    PS7360L-1A-V-A Renesas Electronics Corporation 6-Pin Dip, High Isolation Voltage Visit Renesas Electronics Corporation
    PS7360L-1A-V-E3-A Renesas Electronics Corporation 6-Pin Dip, High Isolation Voltage Visit Renesas Electronics Corporation
    PS7360-1A-V-A Renesas Electronics Corporation 6-Pin Dip, High Isolation Voltage Visit Renesas Electronics Corporation
    UHD432R/B Rochester Electronics LLC UHD432 - Quad 2-Input NOR Power/Relay Driver Visit Rochester Electronics LLC Buy
    DRV777DR Texas Instruments 7-bit Integrated Motor and Relay Driver 16-SOIC -40 to 125 Visit Texas Instruments Buy
    ULN2003LVDR Texas Instruments Low Power 3.3V & 5V Relay Driver 16-SOIC -40 to 85 Visit Texas Instruments Buy

    SABER RELAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - SPICE and SABER Thermal Impedance Models


    Original     		PDF HUF76121SK8

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models


    Original     		PDF HUF76132SK8 TB334, TA76131. MS-012AA AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF76105SK8

    ta7610

    Abstract: TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models


    Original     		PDF HUF76105SK8 TA76105. TB334, MS-012AA ta7610 TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    TC2206

    Abstract: TC-2112 202E1
    Text: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model


    Original     		PDF HUF76113SK8 TC2206 TC-2112 202E1

    Untitled

    Abstract: No abstract text available
    Text: Saber AZ61120-200 OC-48 Multi-Service Traffic Manager and SAR Product Brief Applications On-Chip ATM OAM Processing • • • Broadband Access Multiplexers DSLAM, PON OLT, CMTS, Wireless Base Stations • Edge Switches And Routers • Multi-Service / MPLS Switching Platforms


    Original     		PDF AZ61120-200 OC-48

    Untitled

    Abstract: No abstract text available
    Text: HUF76113DK8 Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6A, 30V • Ultra Low On-Resistance, rDS ON = 0.032Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model


    Original     		PDF HUF76113DK8

    Untitled

    Abstract: No abstract text available
    Text: Saber AZ61120-100 2 x OC-12 Multi-Service Access Switch Product Brief Applications On-Chip ATM OAM Processing • • • Broadband Access Multiplexers DSLAM, PON OLT, CMTS, Wireless Base Stations • Edge Switches and Routers • Multi-Service / MPLS Switching Platforms


    Original     		PDF AZ61120-100 OC-12 AZ61120-100

    Untitled

    Abstract: No abstract text available
    Text: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏


    Original     		PDF HUF76132SK8

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    75345p

    Abstract: No abstract text available
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75345G3, HUF75345P3, HUF75345S3S HUF75345S3 O-262 75345p

    75307D

    Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 43cts 75307D 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334

    76137s

    Abstract: M4E1
    Text: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76137P3, HUF76137S3S O-263 HUF76137S3S 76137s M4E1

    relay rs-5

    Abstract: AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3
    Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HRFZ44N relay rs-5 AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3

    75639p

    Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639p 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334

    75321p

    Abstract: No abstract text available
    Text: HUFA75321P3, HUFA75321S3S TM Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75321P3, HUFA75321S3S 75321p

    Untitled

    Abstract: No abstract text available
    Text: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75329D3, HUFA75329D3S

    Untitled

    Abstract: No abstract text available
    Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER


    OCR Scan     		PDF HUF76121SK8 100ms.

    I-16V

    Abstract: No abstract text available
    Text: HUF76105DK8 interrii Data Sheet O c to b e r 1999 SA, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5A, 30V • Ultra Low On-Resistance, ros ON = 0.050Q • Temperature Compensating PSPICE Model • Temperature Compensating SABER® Model


    OCR Scan     		PDF HUF76105DK8 I-16V

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2

    Untitled

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 TL 431 model SPICE Simulation Model tl 431

    Untitled

    Abstract: No abstract text available
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S HUF75337