Untitled
Abstract: No abstract text available
Text: COMCHIP Axial Lead Transient Voltage Suppressor SMD Diodes Specialist SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 0.033 0.84 0.028(0.71) -Glass passivated chip. 1.000(25.40)
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SA191-G
DO-15
-500W
QW-BTV16
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Untitled
Abstract: No abstract text available
Text: Axial Lead Transient Voltage Suppressor SA5V0-G Thru. SA191-G Series Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-15 -Glass passivated chip. 0.033 0.84 0.028(0.71) -Low leakage. 1.000(25.40) MIN. -500W peak pulse power capability with a
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SA191-G
DO-15
-500W
MIL-STD202,
QW-BTV16
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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120R
Abstract: C8800
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV2562M
120R
C8800
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SA293
Abstract: SA273 988000
Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
16-word/32-byte
56-pi
SA293
SA273
988000
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SA388
Abstract: SA357 SA275 sa478 sa402 asme SA388 d38000 E78000 sa340 SA367
Text: Am29LV256M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL256N supersedes Am29LV256M and is the factory-recommended migration path. Please refer to the S29GL256N datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
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Am29LV256M
S29GL256N
SA388
SA357
SA275
sa478
sa402
asme SA388
d38000
E78000
sa340
SA367
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CD8000
Abstract: 1d60
Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
16-word/32-byte
56-pi
CD8000
1d60
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E78000
Abstract: SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV2562M
E78000
SA275
SA388
sa489
transistor SA427
120R
9898H
Am29LV2562MH120
sa414
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SA508
Abstract: Am29LV256M SA285 SA276 CD8000 E68000 988000
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
16-word/32-byte
SA508
SA285
SA276
CD8000
E68000
988000
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CD8000
Abstract: No abstract text available
Text: Am29LV256M Data Sheet For new designs, S29GL256M supersedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV256M
S29GL256M
Am29LV256MH/L
S29GLxxxM
CD8000
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l256mh113
Abstract: L256ML123R
Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV256M
l256mh113
L256ML123R
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L256MH113R
Abstract: L256ML113R
Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV256M
L256MH113R
L256ML113R
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L256ML
Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/256-byte
8-word/16-byte
L256ML
SA4871
BD8000
sa340
transistor SA427
SA370
8A000
740-0007
Am29LV256
SA36-110
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sa330
Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
Text: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV256M
S29GL256M
Am29LV256MH/L
S29GLxxxM
sa330
E3800
spansion top marking Am29LV256M
Am29LV256MH
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A25Y
Abstract: HSTTV12-48-Q
Text: PAN -SHRINK Catalog SA# 101N48F-AIS DRY -S HRINK ™ , DAMP-SHRINK ™ and WET-SHRINK ™ Heat Shrink and Abrasion Protection Products Contents Heat Shrink Products Type Polyolefin, General Purpose Tubing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . HSTT . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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101N48F-AIS
A25Y
HSTTV12-48-Q
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s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
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Untitled
Abstract: No abstract text available
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N
S29GL032M,
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29gl064
Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N
S29GL032M,
29gl064
TSR056
BGA-63
S29GL032A
S29GL032M
S29GL064A
S29GL064M
S29GL128M
TSOP-20
S29GL256M
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S29GL128P
Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128P,
S29GL256P
S29GL032M,
S29GL128P
a8800
S29GL032
S29GL032A
S29GL032M
S29GL064A
S29GL064M
S29GL128M
S29GL256M
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29gl064
Abstract: Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit 3.0 Volt-only Page Mode Flash Memory Featuring 0.23 µm MirrorBit Process Technology Data Sheet For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N
S29GL032M,
29gl064
Operations-S29GL064M
29gl064M
8A000
TSOP-20 FOOTPRINT
S29GL032M
lead frame pin grid array
GL128M
jedec mo-142
GL256M
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8A0000
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
S29GLxxxMA0
8A0000
|
tsop tray matrix outline
Abstract: S29GL032M S29GL064M S29GL128M S29GL256M S29GL128* FOOTPRINT
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet DATASHEET Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
tsop tray matrix outline
S29GL032M
S29GL064M
S29GL128M
S29GL256M
S29GL128* FOOTPRINT
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S29GL128* FOOTPRINT
Abstract: MARKING SA70 S29GL032M S29GL064M S29GL128M S29GL256M 29gl064 tsop40 C18000 TS048-48-Pin
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet DATASHEET Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
256Mb
S29GL128* FOOTPRINT
MARKING SA70
S29GL032M
S29GL064M
S29GL128M
S29GL256M
29gl064
tsop40
C18000
TS048-48-Pin
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74ABT16821A
Abstract: BT16821ADGG BT16821ADL
Text: INTEGRATED CIRCUITS 74ABT16821A 20-bit bus-interface D-type flip-flop; posltive-edge trigger 3-State Product specification 1995 Apr 20 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 7110fl£b b05 This Material Copyrighted By Its Respective Manufacturer
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74ABT16821A
20-bit
7110flÂ
64mA/-32mA
500mA
7110flEb
74ABT16821A
BT16821ADGG
BT16821ADL
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