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    S8851

    Abstract: S885T
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C


    OCR Scan     		S8851 S885T 15GHz S8851 S885T PDF