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    Everlight Electronics Co Ltd ELUA2835TG0-P0010S83040200-V22D

    EMITTER UVA 405NM SMD
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    DigiKey ELUA2835TG0-P0010S83040200-V22D Digi-Reel 6,000 1
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    Amphenol PCD SJS830401

    CONN RCPT MALE 4POS GOLD CRIMP
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    Amphenol PCD SJS830410

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    Amphenol PCD SJS830411

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    S8304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S83049F

    Abstract: S-8304 photomultiplier 8-stage RS-239A B270
    Text: Return To Product Page S83049F, S83049FM1 Photomultipliers 76-mm 3-inch Diameter 8-Stage, Head-On PMTS BURLE S83049F and S83049FM1 are three-inch round, 8-stage photomultiplier tubes. They employ potassium-cesium-antimonide (bialkali) photocathodes and electron multipliers of the box-and-grid type. The


    Original     		PDF S83049F, S83049FM1 76-mm S83049F S83049FM1 S-8304 photomultiplier 8-stage RS-239A B270

    si7415dn-t1-ge3

    Abstract: No abstract text available
    Text: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching


    Original     		PDF Si7415DN Si7415DN-T1-E3 Si7415DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74250

    Abstract: Si7102DN-T1-E3 Si7102DN-T1-GE3
    Text: Si7102DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 35 0.0047 at VGS = 2.5 V 35 VDS (V) 12 Qg (Typ.) 41 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7102DN Si7102DN-T1-E3 Si7102DN-T1-GE3 11-Mar-11 74250

    si4116

    Abstract: No abstract text available
    Text: New Product Si4116DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0086 at VGS = 10 V 18 0.0095 at VGS = 4.5 V 17 0.0115 at VGS = 2.5 V 15.5 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4116DY Si4116DY-T1-E3 Si4116DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4116

    Untitled

    Abstract: No abstract text available
    Text: Si7703EDN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7703EDN Si7703EDN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7901EDN Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si7901EDN Si7901EDN-T1-E3 Si7901EDN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching


    Original     		PDF Si7415DN Si7415DN-T1-E3 Si7415DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB800EDK SC-75 SC75-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8902EDB-T2-E1

    Abstract: Si8902EDB t2 955 e S8304
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304

    Si1302DL

    Abstract: Si1302DL-T1-GE3 S83040
    Text: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = - 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET SOT-323 SC-70 (3-LEADS)


    Original     		PDF Si1302DL OT-323 SC-70 Si1302DL-T1-E3 Si1302DL-T1-GE3 18-Jul-08 S83040

    Si7703EDN-T1-GE3

    Abstract: Si7703EDN Si7703EDN-T1-E3
    Text: Si7703EDN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7703EDN 18-Jul-08 Si7703EDN-T1-GE3 Si7703EDN-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		PDF SiR890DP SiR890DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB800EDK Vishay Siliconix N-Channel 20-V D-S MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiB800EDK SC-75 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7703EDN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7703EDN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR890DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 50g 0.0040 at VGS = 4.5 V 50g VDS (V) 20 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		PDF SiR890DP SiR890DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4116DY

    Abstract: Si4116DY-T1-E3 Si4116DY-T1-GE3 si4116
    Text: New Product Si4116DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0086 at VGS = 10 V 18 0.0095 at VGS = 4.5 V 17 0.0115 at VGS = 2.5 V 15.5 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4116DY Si4116DY-T1-E3 Si4116DY-T1-GE3 11-Mar-11 si4116

    Untitled

    Abstract: No abstract text available
    Text: Si7218DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 24 0.033 at VGS = 4.5 V 21 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.)


    Original     		PDF Si7218DN Si7218DN-T1-E3 Si7218DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized


    Original     		PDF Si7414DN Si7414DN-T1-E3 Si7414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC S • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters


    Original     		PDF SiR892DP SiR892DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching


    Original     		PDF Si7415DN Si7415DN-T1-E3 Si7415DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12