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    S8050 NPN POWER TRANSISTOR Search Results

    S8050 NPN POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S8050 NPN POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S8050 TRANSISTOR

    Abstract: transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor
    Text: S8050 S8050 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF S8050 500mA 500mA, 30MHz S8050 TRANSISTOR transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. S8050 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to S8550 * Collector Current :Ic=500mA * High Total Power Dissipation: pC=625mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C


    Original     		PDF S8050 S8550 500mA 625mW 100uA 500mA

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 2. COLLECTOR W (Tamb=25℃) 3. BASE Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF S8050 500mA 500mA, 30MHz

    S8050

    Abstract: S8050 TRANSISTOR BR S8050 transistor S8050 transistor D S8050 s8050 d h S8050 equivalent transistor TO-92 S8050 1000I S8050 TO-92
    Text: S8050 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.5 A Collector-base voltage V (BR)CBO :40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF S8050 S8050 S8050 TRANSISTOR BR S8050 transistor S8050 transistor D S8050 s8050 d h S8050 equivalent transistor TO-92 S8050 1000I S8050 TO-92

    s8550 npn

    Abstract: S8050 npn BR S8050 npn s8050 d3 s8050 NPN S8550 npn s8050 d br s8050 d
    Text: S8050 NPN TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage


    Original     		PDF S8050 S8550 500mA 500mA, 30MHz s8550 npn S8050 npn BR S8050 npn s8050 d3 NPN S8550 npn s8050 d br s8050 d

    transistor S8050 pin configuration

    Abstract: transistor TO-92 S8050 S8050 equivalent BR S8050 transistor S8050 S8050 S8050 TRANSISTOR S8050 transistor TO-92 s8050 equivalents br s8050 d
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S8050 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V


    Original     		PDF S8050 625Watts -55OC 500mAdc, 50mAdc) 100mAdc) transistor S8050 pin configuration transistor TO-92 S8050 S8050 equivalent BR S8050 transistor S8050 S8050 S8050 TRANSISTOR S8050 transistor TO-92 s8050 equivalents br s8050 d

    transistor TO-92 S8050

    Abstract: transistor S8050 BR S8050 S8050 transistor S8050 pin configuration S8050 transistor TO-92 S8050 D S8050 npn
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S8050 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050 625Watts -55OC 100uAdc, 40Vdc, 500mAdc, 50mAdc) 100mAdc) transistor TO-92 S8050 transistor S8050 BR S8050 S8050 transistor S8050 pin configuration S8050 transistor TO-92 S8050 D S8050 npn

    transistor s8050

    Abstract: s8050 BR S8050 S8050 equivalent transistor S8050 pin configuration transistor TO-92 S8050 S8050 TRANSISTOR s8050 equivalents s8050 transistor parameters S8050 D
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# S8050 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


    Original     		PDF S8050 625Watts -55OC 50mAdc, 500mAdc, 50mAdc) transistor s8050 s8050 BR S8050 S8050 equivalent transistor S8050 pin configuration transistor TO-92 S8050 S8050 TRANSISTOR s8050 equivalents s8050 transistor parameters S8050 D

    transistor TO-92 S8050

    Abstract: transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF S8050 S8550 500mA 500mA, 30MHz transistor TO-92 S8050 transistor S8050 S8050 BR S8050 S8050 transistor TO-92 S8050 equivalent S8050 TRANSISTOR NPN FEATURES S8550 S8550 equivalent S8050 TO-92

    BR S8050

    Abstract: s8050 S8050 TO-92 transistor s8050 s8050 To 92 transistor S8050 pin configuration transistor TO-92 S8050 s8050 transistor .s8050 transistor s8050 npn transistor
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S8050 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


    Original     		PDF S8050 625Watts -55OC 100uAdc, 40Vdc, 20Vdc, 500mAdc, 50mAdc) BR S8050 s8050 S8050 TO-92 transistor s8050 s8050 To 92 transistor S8050 pin configuration transistor TO-92 S8050 s8050 transistor .s8050 transistor s8050 npn transistor

    s8050 application note

    Abstract: S8050 applications transistor TO-92 S8050 br s8050 d s8050 S8050 NPN Power Transistor
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S8050 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050 625Watts -55OC 100uAdc, s8050 application note S8050 applications transistor TO-92 S8050 br s8050 d s8050 S8050 NPN Power Transistor

    S8050D Transistor TO-92

    Abstract: S8050D S8050 equivalent transistor S8050 s8050 application note S8050 BR S8050 transistor TO-92 S8050 S8050C S8050 applications
    Text: MCC TM Micro Commercial Components S8050 S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050 S8050-B S8050-C S8050-D 625Watts -55OC S8050D Transistor TO-92 S8050D S8050 equivalent transistor S8050 s8050 application note S8050 BR S8050 transistor TO-92 S8050 S8050C S8050 applications

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF S8050 S8550 500mA 500mA, 30MHz

    S8050D

    Abstract: S8050c V S8050D S8050D Transistor TO-92
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 100uAand S8050D S8050c V S8050D S8050D Transistor TO-92

    S8050D

    Abstract: S8050D Transistor TO-92 S8050C TO-92 S8050D V S8050D S8050B transistor S8050D S8050D Transistor s8050-d S8050c Transistor TO-92
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 S8050D S8050D Transistor TO-92 S8050C TO-92 S8050D V S8050D S8050B transistor S8050D S8050D Transistor s8050-d S8050c Transistor TO-92

    S8050D

    Abstract: S8050D Transistor TO-92 S8050C S8050 S8050D Transistor S8050B
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 100uAand S8050D S8050D Transistor TO-92 S8050C S8050D Transistor S8050B

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050

    S8050D

    Abstract: S8050D Transistor TO-92 s8050 application note S8050D Transistor S8050C
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 100uAdc, S8050D S8050D Transistor TO-92 s8050 application note S8050D Transistor S8050C

    S8050D

    Abstract: s8050 application note s8050-d S8050C S8050d a S8050D Transistor S8050
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 S8050D s8050 application note s8050-d S8050C S8050d a S8050D Transistor

    TPT5609

    Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
    Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)


    Original     		PDF 2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA